Management of dynamic read voltage sequences in a memory subsystem
A memory subsystem receives a first read command and a second read command. Responsive to determining that the first read command originated from a host system, the memory subsystem selects a reverse read trim setting. Responsive to determining that the second read command did not originate from the host system, the memory subsystem selects a forward read trim setting. The memory subsystem executes the first read command using the reverse read trim setting. The memory subsystem executes the second read command using the forward read trim setting.
1. A method comprising:
receiving a first read command and a second read command;
responsive to determining that the first read command originated from a host system, selecting a reverse read trim setting;
responsive to determining that the second read command did not originate from the host system, selecting a forward read trim setting;
executing the first read command using the reverse read trim setting; and
executing the second read command using the forward read trim setting.
2. The method of claim 1 , wherein executing the first read command using the reverse read trim setting includes performing a read operation on higher voltage states before lower voltage states.
3. The method of claim 1 , wherein executing the second read command using the forward read trim setting includes performing a read operation on lower voltage states before higher voltage states.
4. The method of claim 1 , wherein the reverse read trim setting comprises at least one of a voltage underdrive value, a voltage underdrive timing parameter, and a reverse read time parameter.
5. The method of claim 1 , wherein the forward read trim setting comprises at least one of a voltage overdrive value, a voltage overdrive timing parameter, and a forward read time parameter.
6. The method of claim 1 , wherein selecting the reverse read trim setting comprises retrieving the reverse read trim setting from a trim register configured to store at least two sets of trim settings including the reverse read trim setting and the forward read trim setting.
7. The method of claim 1 , wherein selecting the forward read trim setting comprises retrieving the forward read trim setting from a trim register configured to store at least two sets of trim settings including the reverse read trim setting and the forward read trim setting.
8. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
receive a first read command and a second read command;
responsive to determining that the first read command originated from a host system, selecting a reverse read trim setting;
responsive to determining that the second read command did not originate from the host system, selecting a forward read trim setting;
execute the first read command using the reverse read trim setting; and
execute the second read command using the forward read trim setting.
9. The non-transitory computer-readable storage medium of claim 8 , wherein executing the first read command using the reverse read trim setting includes performing a read operation on higher voltage states before lower voltage states.
10. The non-transitory computer-readable storage medium of claim 8 , wherein executing second read command using the forward read trim setting includes performing a read operation on lower voltage states of before higher voltage states.
11. The non-transitory computer-readable storage medium of claim 8 , wherein the reverse read trim setting comprises at least one of a voltage underdrive value, a voltage underdrive timing parameter, and a reverse read time parameter.
12. The non-transitory computer-readable storage medium of claim 8 , wherein the forward read trim setting comprises at least one of a voltage overdrive value, a voltage overdrive timing parameter, and a forward read time parameter.
13. The non-transitory computer-readable storage medium of claim 8 , wherein selecting the reverse read trim setting comprises retrieving the reverse read trim setting from a trim register configured to store at least two sets of trim settings including the reverse read trim setting and the forward read trim setting.
14. The non-transitory computer-readable storage medium of claim 8 , wherein selecting the forward read trim setting comprises retrieving the forward read trim setting from a trim register configured to store at least two sets of trim settings including the reverse read trim setting and the forward read trim setting.
15. A system comprising:
a memory component; and
a processing device, coupled with the memory component, to:
receive a first read command and a second read command;
responsive to determining that the first read command originated from a host system, selecting a reverse read trim setting from a trim register of the memory component configured to store at least two sets of trim settings including the reverse read trim setting;
responsive to determining that the second read command did not originate from the host system, selecting a forward read trim setting;
executing the first read command using the reverse read trim setting; and
executing the second read command using the forward read trim setting.
16. The system of claim 15 , wherein executing the first read command using the reverse read trim setting includes performing a read operation on higher voltage states before lower voltage states.
17. The system of claim 15 , wherein executing the second read command using the forward read trim setting includes performing a read operation on lower voltage states of before higher voltage states.
18. The system of claim 15 , wherein the reverse read trim setting comprises at least one of a voltage underdrive value, a voltage underdrive timing parameter, and a reverse read time parameter.
19. The system of claim 15 , wherein the forward read trim setting comprises at least one of a voltage overdrive value, a voltage overdrive timing parameter, and a forward read time parameter.
20. The system of claim 15 , wherein selecting the forward read trim setting comprises retrieving the forward read trim setting from the trim register configured to store the at least two sets of trim settings including the reverse read trim setting and the forward read trim setting.