Silicon-containing composition and method of producing semiconductor substrate
A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R 1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R 2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.
1. A silicon-containing composition comprising:
a polysiloxane compound comprising a first structural unit represented by formula (1), and a second structural unit represented by formula (2); and
a solvent:
wherein,
in the formula (1), X represents an aromatic hydrocarbon group having 1 to 20 carbon atoms and comprising a substituent which comprises a fluorine atom; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R 1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R 1 s are identical or different from each other, and wherein a sum of a and b is no greater than 3, and
in the formula (2), Y represents a monovalent organic group having 1 to 20 carbon atoms and represented by formula (3-1), formula (3-3), or formula (3-4); c is an integer of 1 to 3, wherein in a case in which c is no less than 2, a plurality of Ys are identical or different from each other; R 2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and d is an integer of 0 to 2, wherein in a case in which d is 2, two R 2 s are identical or different from each other, and wherein a sum of c and d is no greater than 3:
wherein, in the formula (3-1), L 1 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms, or a group in which a heteroatom is included between adjacent carbon atoms of a divalent hydrocarbon group having 1 to 10 carbon atoms; R 3 represents a monovalent hydrocarbon group having 1 to 10 carbon atoms; and * denotes a site bonding to the silicon atom in the formula (2),
*-L 3 -R 5 (3-3)
in the formula (3-3), L 3 represents a single bond or a divalent linking group; R 5 represents a monovalent group having a lactone structure; and * denotes a site bonding to the silicon atom in the formula (2),
*-L 4 -R 6 (3-4)
in the formula (3-4), L 4 represents a single bond or a divalent linking group; R 6 represents a monovalent group having a cyclic carbonate structure; and * denotes a site bonding to the silicon atom in the formula (2).
2. The silicon-containing composition according to claim 1 , wherein the polysiloxane compound further comprises a third structural unit represented by formula (4):
wherein, in the formula (4), R 7 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of R 7 s are identical or different from each other.
3. The silicon-containing composition according to claim 1 , wherein the polysiloxane compound further comprises a fourth structural unit represented by formula (5):
(SiO 4/2 ) (5).
4. The silicon-containing composition according to claim 1 , wherein a proportion of the first structural unit with respect to total structural units constituting the polysiloxane compound is no less than 1 mol % and no greater than 40 mol %.
5. The silicon-containing composition according to claim 1 , wherein a proportion of the second structural unit with respect to total structural units constituting the polysiloxane compound is no less than 1 mol % and no greater than 20 mol %.
6. A method of producing a semiconductor substrate, the method comprising:
applying the silicon-containing composition according to claim 1 directly or indirectly on a substrate to form a silicon-containing film;
applying a composition for resist film formation directly or indirectly on the silicon-containing film to form a resist film;
exposing the resist film to a radioactive ray; and
developing with an organic solvent, the resist film exposed.
7. The method according to claim 6 , further comprising before the applying of the silicon-containing composition,
forming an organic underlayer film directly or indirectly on the substrate.
8. The method according to claim 6 , further comprising after the applying of the silicon-containing composition,
removing the silicon-containing film with a removing liquid comprising a base.
9. The method according to claim 8 , wherein
the removing liquid is a liquid comprising a base and water, or a liquid comprising a base, hydrogen peroxide, and water.
10. The method according to claim 6 , wherein the polysiloxane compound further comprises a third structural unit represented by formula (4):
wherein, in the formula (4), R 7 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; and e is an integer of 1 to 3, wherein in a case in which e is no less than 2, a plurality of R 7 s are identical or different from each other.
11. The method according to claim 6 , wherein the polysiloxane compound further comprises a fourth structural unit represented by formula (5):
(SiO 4/2 ) (5).
12. The method according to claim 6 , wherein a proportion of the first structural unit with respect to total structural units constituting the polysiloxane compound is no less than 1 mol % and no greater than 40 mol %.
13. The method according to claim 6 , wherein a proportion of the second structural unit with respect to total structural units constituting the polysiloxane compound is no less than 1 mol % and no greater than 20 mol %.
14. The silicon-containing composition according to claim 1 , wherein in the formula (2), Y is represented by formula (3-1), and in the formula (3-1), R 3 is a group that bonds to the ethereal oxygen atom of the carbonyloxy group in the formula (3-1) at a tertiary carbon atom.
15. The silicon-containing composition according to claim 1 , wherein in the formula (2), Y is represented by formula (3-3), and in the formula (3-3), L 3 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms, or a group in which a heteroatom is included between adjacent carbon atoms of a divalent hydrocarbon group having 1 to 10 carbon atoms.
16. The silicon-containing composition according to claim 1 , wherein in the formula (2), Y is represented by formula (3-4), and in the formula (3-4), L 4 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms, or a group in which a heteroatom is included between adjacent carbon atoms of a divalent hydrocarbon group having 1 to 10 carbon atoms.
17. The method according to claim 6 , wherein in the formula (2), Y is represented by formula (3-1), and in the formula (3-1), R 3 is a group that bonds to the ethereal oxygen atom of the carbonyloxy group in the formula (3-1) at a tertiary carbon atom.
18. The method according to claim 6 , wherein in the formula (2), Y is represented by formula (3-3), and in the formula (3-3), L 3 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms, or a group in which a heteroatom is included between adjacent carbon atoms of a divalent hydrocarbon group having 1 to 10 carbon atoms.
19. The method according to claim 6 , wherein in the formula (2), Y is represented by formula (3-4), and in the formula (3-4), L 4 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms, or a group in which a heteroatom is included between adjacent carbon atoms of a divalent hydrocarbon group having 1 to 10 carbon atoms.