Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol

1. A composition for forming an underlayer film for a solvent-developable resist, the composition comprising:

a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof; and

a solvent;

wherein:

the silicon atom is present in a ratio of 0.1 to 40% by mol based on a total amount of silicon atoms in the composition;

the hydrolysable organosilane is an organosilane of Formula (1):

R 1 a R 2 b Si(R 3 ) 4-(a+b)   Formula (1)

where:

R 1 is a monovalent organic group containing a protected aliphatic alcohol group and is bonded to the silicon atom in Formula (1) though a Si—C bond:

R 2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkenyl group, or a monovalent organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group, and is bonded to the silicon atom in Formula (1) through a Si—C bond;

R 3 is an alkoxy group, an acyloxy group, or a halogen atom;

a is an integer of 1 or 2:

b is an integer of 0 or 1; and

a+b is an integer of 1 or 2; and

the organic group containing the protected aliphatic alcohol group is an organic group of Formula (2):

—R 4 —O—R 5   Formula (2)

where:

R 4 is a C 1-10 alkylene group; and

R 5 is a methyl group to which one or more divalent groups are bonded, the one or more divalent groups being selected from the group consisting of a C 1-10 alkylene group and an ether group.

2. The composition for forming an underlayer film according to claim 1 , further comprising a combination of the hydrolyzable organosilane of Formula (1) and at least one silicon-containing compound, a hydrolysate of the combination, or a hydrolysis-condensation product of the combination;

wherein the at least one silicon-containing compound is selected from the group consisting of a silicon-containing compound of Formula (3) and a silicon-containing compound of Formula (4):

R 6 a Si(R 7 ) 4-a   Formula (3)

[R 8 c Si(R 9 ) 3-c ] 2 Y b   (4)

where:

R 6 is an unsubstituted or substituted alkyl group, an unsubstituted or substituted aryl group, a halogenated alkyl group, a halogenated aryl group, an alkenyl group, or a monovalent organic group having an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, or a cyano group and is bonded to the silicon atom in Formula (3) through a Si—C bond;

R 7 is an alkoxy group, an acyloxy group, or a halogen atom;

a is an integer of 0 to 3;

R 8 is an alkyl group;

R 9 is an alkoxy group, an acyloxy group, or a halogen atom;

Y is an alkylene group or an arylene group;

b is an integer of 0 or 1;

c is an integer of 0 or 1; and

when b=0, a Si—Si single bond is formed.

3. The composition for forming the underlayer film according to claim 2 , wherein the composition comprises the hydrolysis-condensation product of the hydrolyzable organosilane of Formula (1) the hydrolysis-condensation product of the hydrolyzable organosilane of Formula (1) and the silicon-containing compound of Formula (3) as a polymer.

4. The composition for forming an underlayer film according to claim 1 , further comprising water.

5. A resist underlayer film on a substrate, the resist underlayer film being produced by applying the composition for forming an underlayer film as claimed in claim 1 onto a semiconductor substrate and baking the composition.

6. A method for producing a semiconductor device, the method comprising:

applying the composition for forming a resist underlayer film as claimed in claim 1 onto a semiconductor substrate and baking the composition to form a resist underlayer film;

applying a resist composition onto the underlayer film to form a resist film;

exposing the resist film to light;

developing the resist after exposure with a solvent to produce a resist pattern;

etching the resist underlayer film based on the resist pattern; and

fabricating the semiconductor substrate based on the patterned resist film and resist underlayer film.

7. A method for producing a semiconductor device, the method comprising:

forming an organic underlayer film on a semiconductor substrate;

applying the composition for forming a resist underlayer film as claimed in claim 1 onto the organic underlayer film and baking the composition to form a resist underlayer film;

applying a resist composition onto the underlayer film to form a resist film;

exposing the resist film to light;

developing the resist after exposure with a solvent to produce a resist pattern;

etching the resist underlayer film based on the resist pattern;

etching the organic underlayer film based on the patterned resist underlayer film; and

fabricating the semiconductor substrate based on the patterned resist film, resist underlayer film, and organic underlayer film.