Semiconductor device with a semiconductor die embedded between an extended substrate and a bottom substrate
A method of manufacturing a semiconductor device having a semiconductor die within an extended substrate and a bottom substrate may include bonding a bottom surface of a semiconductor die to a top surface of a bottom substrate, forming an adhering member to a top surface of the semiconductor die, bonding an extended substrate to the semiconductor die and to the top surface of the bottom substrate utilizing the adhering member and a conductive bump on a bottom surface of the extended substrate and a conductive bump on the bottom substrate. The semiconductor die and the conductive bumps may be encapsulated utilizing a mold member. The conductive bump on the bottom surface of the extended substrate may be electrically connected to a terminal on the top surface of the extended substrate. The adhering member may include a laminate film, a non-conductive film adhesive, or a thermal hardening liquid adhesive.
1. A semiconductor device comprising:
a first substrate comprising a top surface and a bottom surface;
a semiconductor die comprising a top surface and a bottom surface, wherein the bottom surface of the semiconductor die is bonded to the top surface of the first substrate;
a second substrate comprising a top surface and a bottom surface;
an adhering member between the bottom surface of the second substrate and the top surface of the semiconductor die;
a solder-coated copper ball coupling the bottom surface of the second substrate to the top surface of the first substrate; and
a mold member that encapsulates the semiconductor die and the solder-coated copper ball,
wherein:
the adhering member extends beyond a footprint of the semiconductor die, and
a lateral side of the adhering member is located between a lateral side of the solder-coated copper ball and a lateral side of the semiconductor die.
2. The semiconductor device according to claim 1 , wherein the solder-coated copper ball is directly coupled to a first connecting pad on the first substrate and to a second connecting pad on the second substrate.
3. The semiconductor device according to claim 1 , comprising a terminal on the top surface of the second substrate.
4. The semiconductor device according to claim 3 , wherein the solder-coated copper ball is electrically connected to the terminal.
5. The semiconductor device according to claim 3 , wherein the second substrate comprises an interposer.
6. The semiconductor device according to claim 1 , wherein the adhering member comprises a laminate film.
7. The semiconductor device according to claim 1 , wherein the adhering member comprises one of: a non-conductive film adhesive and a thermal hardening liquid adhesive.
8. The semiconductor device according to claim 1 , wherein the top surface of the first substrate comprises an uppermost surface of the first substrate, and the solder-coated copper ball comprises a bottom end that is no lower than the uppermost surface of the first substrate.
9. The semiconductor device according to claim 1 , wherein a topmost surface of the mold member is coplanar with a topmost surface of the solder-coated copper ball.
10. The semiconductor device according to claim 1 , comprising a plurality of conductive bumps on the bottom surface of the first substrate.
11. A semiconductor device comprising:
a first substrate comprising a top surface and a bottom surface;
a semiconductor die comprising a top surface and a bottom surface;
metal contacts coupling the bottom surface of the semiconductor die to the top surface of the first substrate;
a second substrate comprising a top surface and a bottom surface;
an adhering member between the bottom surface of the second substrate and the top surface of the semiconductor die, wherein the adhering member extends beyond a footprint of the semiconductor die;
a solder-coated copper ball coupling the bottom surface of the second substrate to the top surface of the first substrate; and
a mold member that encapsulates the semiconductor die and the solder-coated copper ball.
12. The semiconductor device according to claim 11 , wherein the solder-coated copper ball is directly coupled to a first connecting pad on the first substrate and to a second connecting pad on the second substrate.
13. The semiconductor device according to claim 11 , comprising a terminal on the top surface of the second substrate.
14. The semiconductor device according to claim 13 , wherein the solder-coated copper ball is electrically connected to the terminal.
15. The semiconductor device according to claim 13 , wherein the second substrate comprises an interposer.
16. The semiconductor device according to claim 11 , wherein the adhering member comprises a laminate film.
17. The semiconductor device according to claim 11 , wherein the adhering member comprises one of: a non-conductive film adhesive and a thermal hardening liquid adhesive.
18. The semiconductor device according to claim 11 , wherein the top surface of the first substrate comprises an uppermost surface of the first substrate, and the solder-coated copper ball comprises a bottom end that is no lower than the uppermost surface of the first substrate.
19. The semiconductor device according to claim 11 , wherein a topmost surface of the mold member is coplanar with a topmost surface of the solder-coated copper ball.
20. The semiconductor device according to claim 11 , comprising a plurality of conductive bumps on the bottom surface of the first substrate.