Method for inspecting chemical solution, method for producing chemical solution, method for controlling chemical solution, method for producing semiconductor device, method for inspecting resist composition, method for producing resist composition, method for controlling resist composition, and method for checking contamination status of semiconductor manufacturing apparatus
Provided are a method for inspecting a chemical solution, the method being able to analyze minute foreign matter in the chemical solution, a method for producing a chemical solution, a method for controlling a chemical solution, a method for producing a semiconductor device, a method for inspecting a resist composition, the method being able to analyze minute foreign matter in the resist composition, a method for producing a resist composition, a method for controlling a resist composition, and a method for checking a contamination status of a semiconductor manufacturing apparatus, the method being able to control minute foreign matter in the semiconductor manufacturing apparatus. The method for inspecting a chemical solution includes a step 1X of preparing a chemical solution; a step 2X of applying the chemical solution onto a semiconductor substrate; and a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry.
1 . A method for inspecting a chemical solution, comprising:
a step 1X of preparing a chemical solution;
a step 2X of applying the chemical solution onto a semiconductor substrate; and
a step 3X, comprising:
(i) a surface defect measuring step, including measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, and
(ii) an analysis step, including irradiating the defect on the surface of the semiconductor substrate with a laser beam based on the positional information obtained from step (i), collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry.
2 . The method for inspecting a chemical solution according to claim 1 , comprising a step 4X of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 3X.
3 . The method for inspecting a chemical solution according to claim 2 , comprising, after the step 4X, a step 5X of measuring the number of defects containing the metal element.
4 . The method for inspecting a chemical solution according to claim 1 , comprising a step 5X of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 3X.
5 . The method for inspecting a chemical solution according to claim 1 , wherein the chemical solution contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal element is 10 ppb by mass or less relative to a total mass of the chemical solution.
6 . The method for inspecting a chemical solution according to claim 1 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
7 . A method for producing a chemical solution, comprising the method for inspecting a chemical solution according to claim 1 .
8 . A method for controlling a chemical solution, comprising:
a step 1X of preparing a chemical solution;
a step 2X of applying the chemical solution onto a semiconductor substrate;
a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry;
a step 4X of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 3X and a step 5X of measuring the number of defects containing the metal element, or
a step 5X of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 3X; and
a step 6X of determining whether the number of defects obtained in the step 5X is within an acceptable range.
9 . The method for controlling a chemical solution according to claim 8 , wherein the chemical solution contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal element is 10 ppb by mass or less relative to a total mass of the chemical solution.
10 . The method for controlling a chemical solution according to claim 8 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
11 . A method for producing a semiconductor device, comprising:
a step 1X of preparing a chemical solution;
a step 2X of applying the chemical solution onto a semiconductor substrate;
a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry;
a step 4X of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 3X and a step 5X of measuring the number of defects containing the metal element, or
a step 5X of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 3X;
a step 6X of determining whether the number of defects obtained in the step 5X is within an acceptable range; and
a step 7X of producing a semiconductor device by using a chemical solution determined to be within the acceptable range in the step 6X.
12 . The method for producing a semiconductor device according to claim 11 , wherein the chemical solution is a pre-wetting solution, a developing solution, a rinsing solution, or a cleaning solution.
13 . The method for producing a semiconductor device according to claim 11 , wherein the chemical solution contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal element is 10 ppb by mass or less relative to a total mass of the chemical solution.
14 . The method for producing a semiconductor device according to claim 11 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
15 . A method for inspecting a resist composition, comprising:
a step 1Y of preparing a resist composition;
a step 2Y of applying the resist composition onto a semiconductor substrate; and
a step 3Y of measuring whether there is a defect in a coating of the resist composition to obtain positional information of the defect in the coating of the resist composition on the semiconductor substrate, irradiating, based on the positional information, the defect on a surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry.
16 . The method for inspecting a resist composition according to claim 15 , comprising a step 4Y of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 3Y.
17 . The method for inspecting a resist composition according to claim 16 , comprising, after the step 4Y, a step 5Y of measuring the number of defects containing the metal element.
18 . The method for inspecting a resist composition according to claim 15 , comprising a step 5Y of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 3Y.
19 . The method for inspecting a resist composition according to claim 15 , wherein the resist composition contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal element is 10 ppb by mass or less relative to a total mass of the resist composition.
20 . The method for inspecting a resist composition according to claim 15 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
21 . A method for producing a resist composition, comprising the method for inspecting a resist composition according to claim 15 .
22 . A method for controlling a resist composition, comprising:
a step 1Y of preparing a resist composition;
a step 2Y of applying the resist composition onto a semiconductor substrate;
a step 3Y of measuring whether there is a defect in a coating of the resist composition to obtain positional information of the defect in the coating of the resist composition on the semiconductor substrate, irradiating, based on the positional information, the defect on a surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry;
a step 4Y of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 3Y and a step 5Y of measuring the number of defects containing the metal element, or
a step 5Y of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 3Y; and
a step 6Y of determining whether the number of defects obtained in the step 5Y is within an acceptable range.
23 . The method for controlling a resist composition according to claim 22 , wherein the resist composition contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal element is 10 ppb by mass or less relative to a total mass of the resist composition.
24 . The method for controlling a resist composition according to claim 22 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
25 . A method for producing a semiconductor device, comprising:
a step 1Y of preparing a resist composition;
a step 2Y of applying the resist composition onto a semiconductor substrate;
a step 3Y of measuring whether there is a defect in a coating of the resist composition to obtain positional information of the defect in the coating of the resist composition on the semiconductor substrate, irradiating, based on the positional information, the defect on a surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry;
a step 4Y of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 3Y and a step 5Y of measuring the number of defects containing the metal element, or
a step 5Y of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 3Y;
a step 6Y of determining whether the number of defects obtained in the step 5Y is within an acceptable range; and
a step 7Y of producing a semiconductor device by using a resist composition determined to be within the acceptable range in the step 6Y.
26 . The method for producing a semiconductor device according to claim 25 , wherein the resist composition contains at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, and a total content of the metal element is 10 ppb by mass or less relative to a total mass of the resist composition.
27 . The method for producing a semiconductor device according to claim 25 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
28 . A method for checking a contamination status of a semiconductor manufacturing apparatus, comprising:
a step 1Z of preparing a chemical solution;
a step 2Z of cleaning a semiconductor manufacturing apparatus by using the chemical solution;
a step 3Z of applying the chemical solution after the cleaning in the step 2Z onto a semiconductor substrate;
a step 4Z of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry; and
a step 5Z of determining whether there is a metal element in the defect from mass spectrometry data of the defect obtained in the step 4Z.
29 . The method for checking a contamination status of a semiconductor manufacturing apparatus according to claim 28 , comprising a step 6Z of measuring the number of defects containing the metal element.
30 . A method for checking a contamination status of a semiconductor manufacturing apparatus, comprising:
a step 1Z of preparing a chemical solution;
a step 2Z of cleaning a semiconductor manufacturing apparatus by using the chemical solution;
a step 3Z of applying the chemical solution after the cleaning in the step 2Z onto a semiconductor substrate;
a step 4Z of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate, irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry; and
a step 6Z of measuring the number of defects containing a metal element based on mass spectrometry data of the defect obtained in the step 4Z.
31 . The method for checking a contamination status of a semiconductor manufacturing apparatus according to claim 28 , wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.
32 . A method for inspecting a chemical solution, comprising:
a step 1X of preparing a chemical solution;
a step 2X of applying the chemical solution onto a semiconductor substrate; and
a step 3X of measuring whether there is a defect on a surface of the semiconductor substrate to obtain positional information of the defect on the surface of the semiconductor substrate,
irradiating, based on the positional information, the defect on the surface of the semiconductor substrate with a laser beam, collecting an analytical sample obtained by the irradiation by using a carrier gas, and subjecting the analytical sample to inductively coupled plasma mass spectrometry, wherein the carrier gas has a water content of 0.00001 ppm by volume or more and 0.1 ppm by volume or less.