The present disclosure provides for methods for designing and constructing metal/semiconductor heterostructures as catalysts for a wide range of applications such as oxygen activation. In a particular aspect, the present disclosure provides for the manipulation of atomic structures at MJ/TiO 2 interface (e.g., Au/TiO 2 interface) that significantly alters the interfacial electron distribution and prompts O 2 activation. In an aspect, the present disclosure provides for a M/TiO 2 composites (e.g., heterostructures) having a N defect-free M/TiO 2 interface and method of making the M/TiO 2 composites having a defect-free M/TiO 2 interface. The M can be Au, Ag, Cu, Al, Pt, Ni, or Pd, for example.
1 . A method comprising:
providing a M/TiO 2 composite having an oxygen vacancy (Vo)-rich M/TiO 2 interface;
calcinating the M/TiO 2 composite at about 300 to 350° C. for a time frame to form a M/TiO 2 composite having a defect-free M/TiO 2 interface, wherein the M/TiO 2 composite is a Cu/TiO 2 composite.
2 . The method of claim 1 , wherein the time frame is about 1 to 3 hours.
3 . A method comprising:
heating a mixture of TiO 2 with a metal nanoparticle precursor material to form a solid material comprising a M/TiO 2 composite having an oxygen vacancy (Vo)-rich M/TiO 2 interface; and
calcinating the solid material comprising the M/TiO 2 composite at about 300 to 350° C. for a time frame to form a M/TiO 2 composite having a defect-free M/TiO 2 interface.
4 . The method of claim 3 , wherein heating includes heating the mixture at about 300 to 350 K for about 15 to 45 minutes at a pH of about 9-10.
5 . The method of claim 3 , wherein the time frame is about 1 to 3 hours.
6 . The method of claim 3 , wherein the M is Au, Ag, Al, Cu, Pt, Ni, or Pd.
7 . The method of claim 3 , wherein the M/TiO 2 composite is a Au/TiO 2 composite.
8 . The method of claim 3 , wherein the M/TiO 2 composite is a Cu/TiO 2 composite.