IP Library Granted Patent US 12,534,640
Granted Patent B2
US 12,534,640 · App. 17/928,395 · Granted Jan 27, 2026

Polishing liquid and polishing method

Inventors: Hiroshi Ono (Tokyo, JP); Keisuke Inoue (Tokyo, JP); Takahiro Jinushi (Tokyo, JP)
Assignee: Resonac Corporation
C09G1/02B24B37/044C09K3/1409H01L21/32115
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Quick Facts
Patent No.
US 12,534,640
App. No.
17/928,395
Granted
Jan 27, 2026
Kind
B2
Abstract

A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid containing abrasive grains, an iron-containing compound, and an oxidizing agent, in which the abrasive grains include silica particles, an average particle diameter of the abrasive grains is 40 to 140 nm, and a silanol group density of the silica particles is 8.0 groups/nm 2 or less. A polishing method of polishing a surface to be polished containing a tungsten material by using the polishing liquid.

Claims (29)

1 . A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising:

abrasive grains; an iron-containing compound; and an oxidizing agent, wherein

the abrasive grains include silica particles,

an average particle diameter of the abrasive grains is 40 to 140 nm,

a silanol group density of the silica particles is 5.5 to 8.0 groups/nm 2 , and

a content of aluminum atoms is less than 0.000006% by mass on the basis of the total mass of the polishing liquid.

2 . A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising:

abrasive grains; an iron-containing compound; and an oxidizing agent, wherein

the abrasive grains include silica particles,

an average particle diameter of the abrasive grains is 40 to 140 nm,

a silanol group density of the silica particles is 8.0 groups/nm 2 or less,

a zeta potential of the abrasive grains is 3.0 mV or less, and

a content of aluminum atoms is less than 0.000006% by mass on the basis of the total mass of the polishing liquid.

3 . The polishing liquid according to claim 2 , wherein the average particle diameter of the abrasive grains is 40 to 85 nm.

4 . The polishing liquid according to claim 2 , wherein the silanol group density of the silica particles is 2.5 groups/nm 2 or less.

5 . The polishing liquid according to claim 2 , wherein the silanol group density of the silica particles is less than 2.0 groups/nm 2 .

6 . The polishing liquid according to claim 2 , wherein a zeta potential of the silica particles in the polishing liquid is more than −10 mV.

7 . The polishing liquid according to claim 2 , wherein the iron-containing compound includes at least one selected from the group consisting of iron nitrate and a hydrate thereof.

8 . The polishing liquid according to claim 2 , wherein a content of the iron-containing compound is 0.0001 to 0.1% by mass on the basis of the total mass of the polishing liquid.

9 . The polishing liquid according to claim 2 , wherein the oxidizing agent includes hydrogen peroxide.

10 . The polishing liquid according to claim 2 , further comprising an organic acid component.

11 . The polishing liquid according to claim 10 , wherein the organic acid component includes at least one selected from the group consisting of a divalent organic acid component and a trivalent organic acid component as an organic acid component not having a carbon-carbon unsaturated bond.

12 . The polishing liquid according to claim 10 , wherein the organic acid component includes at least one selected from the group consisting of malonic acid, succinic acid, adipic acid, glutaric acid, malic acid, citric acid, and salts thereof.

13 . The polishing liquid according to claim 2 , wherein a pH is 2.0 to 4.0.

14 . The polishing liquid according to claim 2 , wherein a pH is 2.5 to 3.5.

15 . The polishing liquid according to claim 2 , wherein the average particle diameter of the abrasive grains is 60 to 85 nm, and

the silanol group density of the silica particles is 1.5 groups/nm 2 or more and less than 2.0 groups/nm 2 .

16 . The polishing liquid according to claim 2 , wherein the content of the abrasive grains is 0.01% by mass or more and less than 3.0% by mass on the basis of the total mass of the polishing liquid.

17 . A polishing method of polishing a surface to be polished containing a tungsten material by using the polishing liquid according to claim 2 .

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Mar 8, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062992/0805 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2022
From: ONO, HIROSHI; INOUE, KEISUKE; JINUSHI, TAKAHIRO
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 061928/0717 →
Priority Claims (1)
WO PCT/JP2021/028425 · Jul 30, 2021 · international
Continuity (1)
Related Publication 20240228830A1 · Jul 11, 2024
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