Fine metal linear body
A fine metal linear body is provided in which the sintering temperature is lower than that in conventional examples. The fine metal linear body has a length of 0.5 to 200 μm and a thickness of 30 nm to 10 μm. When a length of a crystal of a metal constituting the fine metal linear body, in a direction in which the fine metal linear body extends, is taken as X, and a length thereof in a direction orthogonal to the direction is taken as Y, an X/Y value, which is a ratio of the X to the Y, is 4 or less, in three boundary regions when dividing the length of the fine metal linear body into four equal parts along the extending direction.
1. A fine metal linear body with a length of 0.5 to 200 μm and a thickness of 30 nm to 10 μm,
wherein, when a length of a crystal of a metal constituting the fine metal linear body, in a direction in which the fine metal linear body extends, is taken as X, and a length thereof in a direction orthogonal to the direction is taken as Y, the crystal has an arithmetic mean of an X/Y value, which is a ratio of the X to the Y, of 4 or less, in three boundary regions when dividing the length of the fine metal linear body into four equal parts along the extending direction.
2. The fine metal linear body according to claim 1 with a length of 0.5 to 200 μm and a thickness of 30 nm to 10 μm,
wherein, when a length of a crystal of a metal constituting the fine metal linear body, in a direction orthogonal to a direction in which the fine metal linear body extends, is taken as Y, the crystal has an arithmetic mean of the Y of 10 nm or less, in three boundary regions when dividing the length of the fine metal linear body into four equal parts along the extending direction.
3. The fine metal linear body according to claim 2
wherein, in the three boundary regions when dividing the length of the fine metal linear body into four equal parts along the extending direction, the crystal of the metal constituting the fine metal linear body has:
the proportion of crystal grains in a [111] orientation of 50% or more, as evaluated through electron diffraction using a transmission electron microscope or electron backscatter diffraction within ±30° of the direction in which the fine metal linear body extends; or
the proportions of crystal grains in all of [100], [110], and [111] orientations.
4. The fine metal linear body according to claim 1 with a length of 0.5 to 200 μm and a thickness of 30 nm to 10 μm,
wherein a crystal of a metal constituting the fine metal linear body has a proportion of crystal grains in a [110] orientation of 50% or less, as evaluated through electron diffraction using a transmission electron microscope or electron backscatter diffraction within ±30° of a direction in which the fine metal linear body extends, in three boundary regions when dividing the length of the fine metal linear body into four equal parts along the extending direction.
5. The fine metal linear body according to claim 1 ,
wherein, in the three boundary regions when dividing the length of the fine metal linear body into four equal parts along the extending direction, the crystal of the metal constituting the fine metal linear body has:
the proportion of crystal grains in a [111] orientation of 50% or more, as evaluated through electron diffraction using a transmission electron microscope or electron backscatter diffraction within ±30° of the direction in which the fine metal linear body extends; or
the proportions of crystal grains in all of [100], [110], and [111] orientations of 50% or less, as evaluated through electron diffraction using a transmission electron microscope or electron backscatter diffraction within ±30° of the direction in which the fine metal linear body extends.
6. The fine metal linear body according to claim 1 , wherein at least one end is tapered, and an angle of the tapered end is 60 degrees or less.
7. The fine metal linear body according to claim 1 , wherein the metal constituting the fine metal linear body is at least one metal selected from the group consisting of copper, silver, gold, nickel, lead, palladium, platinum, cobalt, tin, iron, bismuth, and zinc, or an alloy containing the metal.
8. The fine metal linear body according to claim 7 , wherein the metal constituting the fine metal linear body is copper or a copper alloy.
9. A method for producing the fine metal linear body according to claim 1 using a metal as a base material, comprising a step of depositing the metal on a cathode through electrolytic reduction using an electrolyte containing a metal element source,
wherein the electrolytic reduction is performed in a state in which an oily substance is attached to a surface of the cathode.
10. The method according to claim 9 , wherein the oily substance is a fatty acid, or a salt, an ester, or an amide thereof, an aromatic carboxylic acid, an aliphatic hydrocarbon, an aliphatic alcohol, an aliphatic amine, a silicone, or a mixture thereof.
11. An aggregate of the fine metal linear bodies according to claim 1 ,
wherein the number of fine metal linear bodies having a curved portion whose radius of curvature is 5 times or less the length of each fine metal linear body is 5% or more of the total number of fine metal linear bodies.
12. An aggregate of the fine metal linear bodies according to claim 1 ,
wherein the proportion of particles with a shape other than the linear shape in the aggregate is 50% or less.
13. A composition comprising the fine metal linear body according to claim 1 , and a dispersion medium.
14. A bonding structure comprising a first member, a second member, and a bonding portion that bonds the first member and the second member,
wherein the bonding portion is constituted by a sintered compact of the composition according to claim 13 .
15. A semiconductor apparatus comprising a first member, a second member, and a bonding portion that bonds the first member and the second member,
wherein the bonding portion is constituted by a sintered compact of the composition according to claim 13 , and
at least one of the first member and the second member is a semiconductor device.
16. An electronic circuit component comprising a substrate, and a conductive pattern formed on the substrate,
wherein the conductive pattern is constituted by a sintered compact of the composition according to claim 13 .