Leadframe mounting with lead insertion for lead wall bonding
A semiconductor device package may include a substrate having an insulating layer with a patterned conductive layer formed thereon, the patterned conductive layer including at least a first pattern portion and a second pattern portion. The semiconductor device package may include a leadframe having a lead that is soldered to the substrate with solder provided in an opening between the first pattern portion and the second pattern portion and with the lead inserted into the opening.
1 . A method of making a semiconductor device package, comprising:
patterning a patterned conductive layer on an insulating layer of a substrate, the patterned conductive layer including at least a first pattern portion and a second pattern portion;
applying solder paste within an opening between the first pattern portion and the second pattern portion and at least partially on the insulating layer;
positioning a leadframe on the patterned conductive layer;
inserting a lead of the leadframe within the solder paste; and
heating the solder paste to solder bond the lead to the first pattern portion and the second pattern portion on the substrate with the lead inserted into the opening.
2 . The method of claim 1 , wherein the patterning of the patterned conductive layer on the insulating layer comprises patterning the first pattern portion and the second pattern portion separated from one another on the insulating layer with the opening formed as a groove between the first pattern portion and the second pattern portion.
3 . The method of claim 1 , wherein the patterning of the patterned conductive layer on the insulating layer comprises patterning the first pattern portion and the second pattern portion connected to one another on the insulating layer with the opening formed as a hole between the first pattern portion and the second pattern portion.
4 . The method of claim 1 , wherein the heating the solder paste comprises:
performing a vacuum reflow process.
5 . The method of claim 1 , further comprising:
positioning at least one semiconductor device on the lead; and
encapsulating the at least one semiconductor device, the lead, and the substrate with a molding material.
6 . A method of making a semiconductor device package, comprising:
forming a substrate having an insulating layer with a patterned conductive layer formed thereon, the patterned conductive layer including at least a first pattern portion and a second pattern portion; and
providing a leadframe on the patterned conductive layer with a lead that is soldered to the first pattern portion and the second pattern portion on the substrate with solder provided at least partially on the insulating layer in an opening between the first pattern portion and the second pattern portion and with the lead inserted into the opening.
7 . The method of claim 6 , further comprising:
inserting an end portion of the lead into the opening and positioned between a surface of the patterned conductive layer and a surface of the insulating layer.
8 . The method of claim 6 , further comprising:
forming the solder at least partially on a surface of the insulating layer within the opening.
9 . The method of claim 6 , wherein the first pattern portion and the second pattern portion are separated from one another on the insulating layer, the opening is a groove formed between the first pattern portion and the second pattern portion, and further comprising:
bonding an end portion of the lead by the solder to walls of the groove.
10 . The method of claim 6 , wherein the first pattern portion and the second pattern portion are connected to one another on the insulating layer, the opening is a hole formed within the patterned conductive layer, and further comprising:
bonding an end portion of the lead by the solder to walls of the hole.
11 . The method of claim 6 , further comprising:
forming the patterned conductive layer on a first side of the insulating layer; and
forming a conductive layer on an opposed second side of the insulating layer.
12 . The method of claim 11 , wherein the substrate is a direct bonded metal (DBM) substrate, in which the patterned conductive layer and the conductive layer are formed using copper and the insulating layer is formed using a ceramic material.
13 . The method of claim 6 , wherein the lead includes a lead post and a lead body, and further comprising:
inserting the lead post into the opening and bonded to the first pattern portion and the second pattern portion using the solder; and
forming the lead body at an angle to the lead post.
14 . The method of claim 6 , further comprising:
forming the lead with a Z-shape having a first portion formed at a first angle to a second portion, and a third portion formed at a second angle with the second portion; and
at least partially inserting the third portion into the opening and bonded to the first pattern portion and the second pattern portion using the solder.
15 . A method of making a semiconductor device package, comprising:
forming a substrate having an insulating layer with a patterned conductive layer formed thereon, the patterned conductive layer including at least a first pattern portion and a second pattern portion; and
forming a leadframe positioned on the patterned conductive layer and having a lead with a lead end portion that is inserted into an opening between the first pattern portion and the second pattern portion, and that is soldered to at least one wall of the opening and to the insulating layer.
16 . The method of claim 15 , wherein the first pattern portion and the second pattern portion are separated from one another on the insulating layer, and the opening is a groove formed between the first pattern portion and the second pattern portion.
17 . The method of claim 15 , wherein the first pattern portion and the second pattern portion are connected to one another on the insulating layer, and the opening is a hole formed within the patterned conductive layer.
18 . The method of claim 15 , further comprising:
forming the lead end portion at an angle to a lead body of the lead.
19 . The method of claim 15 , further comprising:
providing the lead with a Z-shape having a first portion formed at a first angle to a second portion, and with the lead end portion formed at a second angle with the second portion.
20 . The method of claim 15 , further comprising:
forming the patterned conductive layer on a first side of the insulating layer; and
forming a conductive layer on an opposed second side of the insulating layer.