Selective deposition of organic material
The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.
1 . A method for selectively depositing a layer of organic material on a substrate comprising a first surface and a second surface by a cyclic deposition process, the process comprising:
providing a substrate in a reaction chamber;
providing a first vapor-phase precursor in the reaction chamber; and
providing a second vapor-phase precursor in the reaction chamber,
wherein the first and second vapor-phase precursors form organic material selectively on the first surface relative to the second surface; and wherein the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms, and wherein the first precursor is liquid at a temperature of 15-40° C.
2 . The method of claim 1 , wherein the temperature at which vapor pressure of the first precursor is 1 Torr is lower than 40° C., or lower than 20° C.
3 . The method of claim 1 , wherein the second vapor-phase precursor comprises a dianhydride.
4 . The method of claim 1 , wherein the organic material comprises a polyimide.
5 . The method of claim 1 , wherein the organic material comprises a polyamic acid.
6 . The method of claim 1 , wherein the substrate is held at a temperature higher than about 100° C. during the deposition process.
7 . The method of claim 1 , wherein the second surface comprises an inorganic dielectric surface.
8 . The method of claim 1 , wherein the second surface comprises silicon.
9 . The method of claim 1 , wherein the second surface comprises SiO 2 .
10 . The method of claim 1 , wherein the organic material is deposited on the first surface relative to the second surface with a selectivity of above about 50%.
11 . The method of claim 1 , wherein the first surface comprises a metal oxide, elemental metal, or metallic surface.
12 . The method of claim 1 , wherein the first surface comprises a metal selected from a group consisting of aluminum, copper, tungsten, cobalt, nickel, niobium, iron, molybdenum, manganese, zinc, ruthenium and vanadium.
13 . The method of claim 1 , wherein each deposition cycle further comprises removing excess of the first vapor-phase precursor and reaction by-products after providing the first vapor-phase precursor into the reaction chamber.
14 . The method of claim 1 , wherein each deposition cycle further comprises removing excess of the second vapor-phase precursor and reaction by-products after providing the second vapor-phase precursor into the reaction chamber.
15 . The method of claim 1 , wherein the diamine compound is a C5 to C11 compound.
16 . The method of claim 1 , wherein a carbon atom bonded with an amine nitrogen in the diamine compound is bonded to at least two carbon atoms.
17 . The method of claim 1 , wherein the diamine compound is selected from a group consisting of 1,3-diaminopentane; 1,4-diaminopentane; 2,4-diaminopentane; 2,4-diamino-2,4-dimethylpentane; 1,5-diamino-2-methylpentane; 1,3-diaminobutane; 1,3-diamino-3-methylbutane; 2,5-diamino-2,5-dimethylhexane; 1,4-diamino methylpentane; 1,3-diaminobutane; 1,5-diaminohexane; 1,3-diaminohexane; 2,5-diaminohexane; 1,3-diamino-5-methylhexane; 4,4,4-trifluoro-1,3-diamino methylbutane; 2,4-diamino-2-methylpentane; and 4-(1-methylethyl)-1,5-diaminohexane, 3-aminobutanamide, 1,3-diamino-2-ethylhexane, 2,7-diamino-2,7-dimethyloctane and 1,3-diaminobenzene and 1,4-diaminobenzene.
18 . The method of claim 1 , wherein the diamine compound comprises a halogen.
19 . The method of claim 1 , wherein the method comprises a preclean comprising a reduction and an oxidation step before depositing the organic material on the first surface of the substrate.
20 . A method for selectively depositing a layer of organic material on a substrate comprising a first surface and a second surface by a cyclic deposition process, the process comprising:
contacting the substrate with a first vapor-phase precursor; and
contacting the substrate with a second vapor-phase precursor, wherein
the first and second vapor-phase precursors form organic material selectively on the first surface relative to the second surface; and wherein the first vapor-phase precursor comprises a diamine comprising at least three carbon atoms and the amine groups being attached to non-adjacent carbon atoms, and wherein the first precursor is liquid at a temperature of 15-40° C.
21 . A method of selectively depositing an inorganic material on a second surface of a substrate relative to first a surface of the substrate by a cyclic deposition process, wherein the process comprises
depositing a layer of organic material on the first surface by
providing a substrate in a reaction chamber;
providing a first vapor-phase precursor in the reaction chamber; and
providing a second vapor-phase precursor in the reaction chamber,
wherein the first and second vapor-phase precursors form organic material selectively on the first surface relative to the second surface; and wherein the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms; and wherein the first precursor is liquid at a temperature of 15-40° C.; and
depositing the inorganic material on the second surface.