Toposelective vapor deposition using an inhibitor
The current disclosure generally relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to methods of depositing a layer on a substrate comprising a recess. The method comprises providing the substrate comprising a recess in a reaction chamber, depositing inhibition material on the substrate to fill the recess with inhibition material, removing the inhibition material from the substrate for exposing a deposition area and depositing a layer on the deposition area by a vapor deposition process. A vapor deposition assembly for performing the method is also disclosed.
1. A method of depositing a layer on a substrate comprising a recess, wherein the method comprises:
providing the substrate comprising the recess in a reaction chamber;
depositing an inhibition material on the substrate to fill the recess;
removing a first part of the inhibition material from the substrate to expose a first deposition area; and
depositing an etch-stop layer on the first deposition area by a selective vapor deposition process;
removing a second part of the inhibition material after depositing the etch-stop layer; and
performing an isotropic etching process to modify geometry of the recess after removing the second part of the inhibition material.
2. The method of claim 1 , wherein the inhibition material is deposited to substantially cover the entirety of the substrate.
3. The method of claim 1 , wherein removing of the first part of the inhibition material includes removing the inhibition material from areas outside the recess.
4. The method of claim 1 , wherein the first deposition area is at least partially inside the recess.
5. The method of claim 1 , wherein removing of the first part of the inhibition material is anisotropic.
6. The method of claim 1 wherein the inhibition material comprises organic material.
7. The method of claim 6 , wherein the organic material comprises a polymer.
8. The method of claim 6 , wherein the organic material comprises a polyimide.
9. The method of claim 1 , wherein the first part of the inhibition material is removed by etching or ashing.
10. The method of claim 1 , wherein the selective vapor deposition process is a cyclic vapor deposition process.
11. The method of claim 10 , wherein the cyclic vapor deposition process comprises supplying at least two precursors in an alternating and sequential manner into the reaction chamber.
12. The method of claim 1 , wherein the selective vapor deposition process for depositing the etch-stop layer is a thermal process.
13. The method of claim 1 , wherein the inhibition material inhibits depositing the etch-stop layer on the substrate with the selective vapor deposition process.
14. The method of claim 1 , wherein removing the second part of the inhibition material exposes a second deposition area.
15. The method of claim 1 , wherein removing the second part of the inhibition material removes the inhibition material substantially completely from the substrate.
16. The method of claim 1 , wherein the recess comprises a vertical portion and a horizontal portion extending from the vertical portion relative to a surface of the substrate, and the first part of the inhibition material is removed substantially only from the vertical portion of the recess.
17. The method of claim 1 , further comprising removing the etch-stop layer.
18. A method of deposition of a layer on a substrate comprising a recess, wherein the method comprises:
providing the substrate with the recess in a reaction chamber, wherein a surface of the recess comprises an area with inhibition material;
removing the inhibition material to a predetermined degree for exposing a first deposition area;
depositing an etch-stop layer on the first deposition area by a selective vapor deposition process,
removing additional inhibition material after depositing the etch-stop layer; and
performing an isotropic etching process to modify geometry of the recess after removing the additional inhibition material.
19. A vapor deposition assembly for depositing a layer on a substrate comprising a recess, the assembly comprising:
a first reaction chamber configured and arranged to deposit an inhibition material on the substrate for filling the recess, to remove the inhibition material from the substrate to expose a deposition area, and to etch the substrate to modify geometry of the recess after an etch-stop layer is deposited on the deposition area; and
a second reaction chamber configured and arranged to deposit the etch-stop layer on the deposition area by a selective vapor deposition process.
20. The vapor deposition assembly of claim 19 , wherein the vapor deposition assembly is a cluster tool.