Stretchable electronic materials and devices
Devices and methods relating to stretchable electronics. A stretchable electronic film includes an insulating polymer and less than 1 wt % of a semiconducting polymer. Manufacturing a multi-layered, stretchable electronic device characterized by a single peel-off step for integrating the components of the device rather than a multi-peel synthesis of the device.
1 . A film comprising:
an insulating polymer; and
a semiconducting polymer;
wherein:
the semiconducting polymer is present in an amount of 0.1 wt % to 3 wt %; and
the film is phase-separated and comprises a first layer primarily comprising the insulating polymer and a second layer primarily comprising the semiconducting polymer.
2 . The film of claim 1 , wherein:
the insulating polymer comprises polydimethylsiloxane (PDMS); and
at least one of:
the Young's Modulus of the film is at least 0.5 MPa;
the tensile strength of the film is at least 1.5 MPa; or
the break strain of the film is from 20% to 200%.
3 . The film of claim 1 , wherein;
the semiconducting polymer forms an interpenetrating network structure within the insulating polymer; and
at least two of:
the Young's Modulus of the film is at least 0.5 MPa;
the tensile strength of the film is at least 1.5 MPa; or
the break strain of the film is from 20% to 200%.
4 . An electronic device comprising:
the film of claim 1 ; and
one or more electrode layers.
5 . The electronic device of claim 4 further comprising a stretchable support layer;
wherein the one or more electrode layers comprise:
a first electrode layer disposed proximate a first side of the film; and
a second electrode layer having a first side and a second side;
wherein a first side of the second electrode is disposed proximate a second side of the film; and
wherein the second side of the second electrode layer is disposed proximate the stretchable support layer.
6 . The electronic device of claim 5 , wherein:
the first electrode layer is selected from the group consisting of metal nanoparticles, nanowires, nanosheet-based electrodes, CNT-based electrode, graphene-based electrode, carbon-based electrode, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-bis(trifluoromethane) sulfonimide lithium salt (PEDOT:PSS-LiTFSI), and combinations thereof; and
the second electrode layer is selected from the group consisting of metal nanoparticles, nanowires, nanosheet-based electrodes, CNT-based electrode, graphene-based electrode, carbon-based electrode, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)-bis(trifluoromethane) sulfonimide lithium salt (PEDOT:PSS-LiTFSI), and combinations thereof.
7 . The electronic device of claim 5 , wherein;
the first electrode layer comprises PEDOT:PSS-LiTFSI; and
the second electrode layer comprises PEDOT: PSS-LiTFSI.
8 . The electronic device of claim 5 , wherein the stretchable support layer comprises PDMS-Ecoflex (PDMS-Eco.).
9 . The stretchable electronic device of claim 5 , wherein the charge mobility of the electronic device is at least 0.01 cm 2 /V·s.
10 . The electronic device of claim 5 , wherein;
the first electrode layer comprises PEDOT:PSS-LiTFSI;
the second electrode layer comprises PEDOT:PSS-LiTFSI;
the stretchable support layer comprises PDMS-Ecoflex (PDMS-Eco.); and
the charge mobility of the electronic device is at least 0.01 cm 2 /V·s.
11 . The electronic device of claim 5 , wherein at least one of:
the Young's Modulus of the film is at least 0.5 MPa;
the tensile strength of the film is at least 1.5 MPa; or the break strain of the film is from 20% to 200%.
12 . A method for manufacturing the electronic device of claim 4 comprising:
depositing the film on a first electrode layer of the one or more electrode layers; and
depositing a second electrode layer of the one or more electrode layers onto the film.
13 . The method of claim 12 further comprising:
depositing a stretchable support layer onto the second electrode layer;
depositing a release layer onto a substrate;
depositing the first electrode layer onto the substrate; and
separating the deposited layers and film from the substrate.
14 . The method of claim 13 , wherein the substrate is selected from the group consisting of glass, silica, ceramic, quartz, plastic and combinations thereof; and
wherein at least one of:
the Young's Modulus of the film is at least 0.5 MPa;
the tensile strength of the film is at least 1.5 MPa; or
the break strain of the film is from 20% to 200%.
15 . The method of claim 13 , wherein depositing the film is selected from the group consisting of spin-coating, blade-coating, spray-coating, and roll-to-roll coating the film.
16 . The method of claim 13 , wherein the film is phase-separated and interpenetrating.
17 . The method of claim 13 , wherein work of adhesion between the stretchable support layer and the second electrode layer is higher than work of adhesion between the first electrode layer and the release layer, but lower than work of adhesion between the first electrode layer and the film.
18 . A film comprising:
an insulating polymer; and
a semiconducting polymer;
wherein:
the semiconducting polymer is present in an amount of 0.1 wt % to 3 wt %;
the film is phase-separated and comprises a first layer primarily comprising the insulating polymer and a second layer primarily comprising the semiconducting polymer;
the semiconducting polymer forms an interpenetrating network structure within the insulating polymer;
the insulating polymer is selected from the group consisting of silicone-based polymers, polyurethane (PU), butadiene-styrene copolymers, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) copolymers, styrene ethylene butylene styrene block copolymer (SEBS), polydimethylsiloxane (PDMS), and combinations thereof, and
the semiconducting polymer is selected from the group consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT), poly [2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPP -DTT), poly(2,5-bis(2-octyldodecyl)-3,6-di(pyridin-2-yl)-pyrrolo[3,4-c]pyrrole -1,4(2H,5H)-dione-alt-2,2′-bithiophene) (DPPDPyBT), and combinations thereof.
19 . The film of claim 18 , wherein the semiconducting polymer is present in an amount of 0.5 wt % to 1 wt %.
20 . The film of claim 19 , wherein each of:
the Young's Modulus of the film is at least 0.5 MPa;
the tensile strength of the film is at least 1.5 MPa; and
the break strain of the film is from 20% to 200%.