Methods and devices to improve switching time by bypassing gate resistor
Implementing a series gate resistor in a switching circuit results in several performance improvements. Few examples are better insertion loss, lower breakdown voltage requirements and a lower frequency corner. These benefits come at the expense of a slower switching time. Methods and devices offering solutions to this problem are described. Using a concept of bypassing the series gate resistor during transition time, a fast switching time can be achieved while the above-mentioned performance improvements are maintained.
1. A switching circuit comprising:
an input terminal;
a series arrangement of main FET switches,
main gate resistors connected to corresponding gate terminals of the main FET switches, the main gate resistors being tied to one another at a main gate resistors common node;
a common bypass switch block comprising:
a series arrangement of NMOS FETs having a first NMOS FET and a second NMOS FET, the first NMOS FET being the closest to the input terminal and the second NMOS FET being the closest to the main gate resistors common node;
a series arrangement of PMOS FETs having a first PMOS FET and a second PMOS FET, the first PMOS FET being the closest to the input terminal and the second PMOS FET being the closest to the main gate resistors common node;
wherein:
drain and source terminals of the NMOS FETs are coupled with corresponding drain and source terminals of the PMOS FETs respectively;
the drain terminals of the first NMOS FET and first PMOS FET are connected together at the input terminal, and
the source terminals of the second NMOS FET and second PMOS FET are connected together at the main gate resistors common node,
the switching circuit further comprising NMOS FET gate resistors and PMOS FET gate resistors, wherein each NMOS FET gate resistor is connected to a gate terminal of a corresponding NMOS FET, and wherein each PMOS FET gate resistor is connected to a gate terminal of a corresponding PMOS FET.
2. The switching circuit of claim 1 , wherein the NMOS FET gate resistors are tied together at a first common bypass switch block node, and the PMOS FET gate resistors are tied together at a second common bypass switch block node.
3. The switching circuit of claim 2 , further comprising a series arrangement of bypass gate resistors coupling the input terminal to the main gate resistors common node, wherein each bypass gate resistor is coupled across drain and source terminals of a corresponding pair of NMOS and PMOS FET gate resistors.
4. The switching circuit of claim 3 , configured to receive a first control signal at the first common bypass switch block node, and to receive a second control signal at the second common bypass switch block node.
5. The switching circuit of claim 4 , wherein the first control signal and the second control signal are configured such that:
the NMOS FETs of the common bypass switch block are ON when the main FET switches are transitioning from an OFF to an ON state;
the PMOS FETs of the common bypass switch block are OFF when the main FET switches are transitioning from the OFF to the ON state;
the NMOS FETs of the common bypass switch block are OFF when the main FET switches are transitioning from the ON to the OFF state; and
the PMOS FETs of the common bypass switch block are ON when the main FET switches are transitioning from the ON to the OFF state.
6. A switching circuit comprising:
an input terminal;
a series arrangement of main FET switches;
main gate resistors connected to corresponding gate terminals of the main FET switches, the main gate resistors being connected to a main gate resistors common node;
a common bypass switch block comprising a first NMOS FET, a second NMOS FET, a first PMOS FET and a second PMOS FET, the drain terminals of the first NMOS FET and first PMOS FET being connected to each other at the input terminal, the source terminals of the first NMOS FET and first PMOS FET being connected to each other at the main gate resistors common node;
NMOS FET gate resistors and a PMOS FET gate resistors, wherein each NMOS FET gate resistor is connected to a gate terminal of a corresponding NMOS FET, and wherein each PMOS FET gate resistor is connected to a gate terminal of a corresponding PMOS FET.
7. The switching circuit of claim 6 , wherein the NMOS FET gate resistors are tied together at a first common bypass switch block node, and wherein the PMOS FET gate resistors are tied together at a second common bypass switch block node.
8. The switching circuit of claim 7 , further comprising a series arrangement of bypass gate resistors coupling the input terminal to the main gate resistors common node, wherein each bypass gate resistor is coupled across drain and source terminals of a corresponding pair of NMOS and PMOS FET gate resistors.
9. The switching circuit of claim 8 , configured to receive a first control signal at the first common bypass switch block node, and to receive a second control signal at the second common bypass switch block node.
10. The switching circuit of claim 9 , wherein the first control signal and the second control signal are configured such that:
the NMOS FETs of the common bypass switch block are ON when the main FET switches are transitioning from an OFF to an ON state;
the PMOS FETs of the common bypass switch block are OFF when the main FET switches are transitioning from the OFF to the ON state;
the NMOS FETs of the common bypass switch block are OFF when the main FET switches are transitioning from the ON to the OFF state; and
the PMOS FETs of the common bypass switch block are ON when the main FET switches are transitioning from the ON to the OFF state.
11. The switching circuit of claim 7 , further comprising a common bypass switch block resistor connecting the input terminal to the main gate resistors common node.
12. The switching circuit of claim 7 , wherein the first and the second common bypass switch block nodes are tied to the input terminal.
13. The switching circuit of claim 12 , further comprising a first main gate resistor switch arranged in parallel with a second main gate resistor switch, the first and the second main gate resistor switches being coupled across a corresponding main gate resistor.
14. The switching circuit of claim 13 configured to receive a control voltage applied at the input terminal, the control voltage being configured to transition the main FET switches from an OFF to an ON state and vice versa.
15. The switching circuit of claim 14 , wherein
the first main gate resistor switch is ON when the main FET switches are transitioning from an OFF to an ON state;
the second main gate resistor switch is OFF when the main FET switches are transitioning from the OFF to the ON state;
the first main gate resistor switch is OFF when the main FET switches are transitioning from the ON to the OFF state, and
the second main gate resistor switch is ON when the main FET switches are transitioning from the ON to the OFF state.
16. The switching circuit of claim 15 , wherein the first and the second main gate resistor switches are OFF when the main FET switches are in the ON state.
17. The switching circuit of claim 16 , wherein the first main gate resistor switch comprises a main bypass NMOS FET and the second main gate resistor switch comprises a main bypass PMOS FET.
18. The switching circuit of claim 17 , wherein drain terminals of the main bypass NMOS and PMOS FETs are tied together, and the source terminals of the main bypass NMOS and PMOS FETs are tied together.
19. The switching circuit of claim 10 , wherein the first control signal and the second control signal are configured such that the NMOS FETs and PMOS FETs of the common bypass switch block are OFF when the main FET switches are in the ON state.