Composition, method of forming resist underlayer film, and method of forming resist pattern
A composition includes: a compound including an aromatic ring; and a first polymer including a first structural unit represented by formula (1) and a second structural unit represented by formula (2). A content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass. R 1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; and R 2 represents a substituted or unsubstituted monovalent hydrocarbon group. R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring; R 4 represents a hydroxy group or a monovalent hydroxyalkyl group; and n is an integer of 1 to 8.
1 . A composition comprising:
a compound comprising an aromatic ring; and
a first polymer comprising a first structural unit represented by formula (1) and a second structural unit represented by formula (2), wherein
a content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass,
wherein,
in the formula (1), R 1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R 2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, a part or all hydrogen atoms of the monovalent hydrocarbon group being substituted with a fluorine atom, and
in the formula (2), R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms; R 4 represents a monovalent hydroxyalkyl group having 1 to 10 carbon atoms; and n is an integer of 1 to 8, wherein in a case in which n is no less than 2, a plurality of R 4 s are identical or different.
2 . The composition according to claim 1 , wherein a molecular weight of the compound is no less than 300.
3 . The composition according to claim 1 , wherein the compound is a second polymer comprising a structural unit comprising an aromatic ring.
4 . The composition according to claim 3 , wherein the second polymer is a novolac resin, a resol resin, an acenaphthylene resin, an indene resin, an arylene resin, a triazene resin, or a calixarene resin.
5 . The composition according to claim 1 , wherein the hydroxyalkyl group in R 4 is a monohydroxyalkyl group.
6 . The composition according to claim 5 , wherein the monohydroxyalkyl group is a monohydroxymethyl group.
7 . The composition according to claim 1 , wherein a proportion of the first structural unit with respect to total structural units constituting the first polymer is no less than 10 mol % and no greater than 90 mol %.
8 . The composition according to claim 1 , wherein a proportion of the second structural unit with respect to total structural units constituting the first polymer is no less than 10 mol % and no greater than 90 mol %.
9 . The composition according to claim 1 , wherein a content of the first polymer with respect to 100 parts by mass of the compound is no less than 1 part by mass and no greater than 15 parts by mass.
10 . A method of forming a resist underlayer film, the method comprising:
applying a composition for resist underlayer film formation directly or indirectly on a substrate to form the resist underlayer film,
wherein the composition for resist underlayer film formation comprises:
a compound comprising an aromatic ring; and
a first polymer comprising a first structural unit represented by formula (1) and a second structural unit represented by formula (2), wherein
a content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass,
wherein,
in the formula (1), R 1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R 2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, a part or all hydrogen atoms of the monovalent hydrocarbon group being substituted with a fluorine atom, and
in the formula (2), R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms; R 4 represents a monovalent hydroxyalkyl group having 1 to 10 carbon atoms; and n is an integer of 1 to 8, wherein in a case in which n is no less than 2, a plurality of R 4 s are identical or different.
11 . A method of forming a resist pattern, the method comprising:
applying a composition for resist underlayer film formation directly or indirectly on a substrate to form a resist underlayer film;
applying a composition for resist film formation directly or indirectly on the resist underlayer film to form a resist film;
exposing the resist film to a radioactive ray; and
developing the resist film exposed,
wherein the composition for resist underlayer film formation comprises:
a compound comprising an aromatic ring; and
a first polymer comprising a first structural unit represented by formula (1) and a second structural unit represented by formula (2), wherein
a content of the first polymer with respect to 100 parts by mass of the compound is no less than 0.1 parts by mass and no greater than 200 parts by mass,
wherein,
in the formula (1), R 1 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; and R 2 represents a monovalent hydrocarbon group having 1 to 20 carbon atoms, a part or all hydrogen atoms of the monovalent hydrocarbon group being substituted with a fluorine atom, and
in the formula (2), R 3 represents a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms; L represents a single bond or a divalent linking group; Ar represents a group obtained by removing (n+1) hydrogen atoms from a substituted or unsubstituted aromatic ring having 6 to 20 ring atoms; R 4 represents a monovalent hydroxyalkyl group having 1 to 10 carbon atoms; and n is an integer of 1 to 8, wherein in a case in which n is no less than 2, a plurality of R 4 s are identical or different.
12 . The method according to claim 11 , further comprising, before the applying of the composition for resist film formation,
forming a silicon-containing film directly or indirectly on the resist underlayer film.