Resist underlayer film forming composition containing triaryldiamine-containing novolac resin
A material to form a resist underlayer film having properties achieving heat resistance, flattening properties, and etching resistance through lithography. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): (wherein R 1 is an organic group having at least two amines and at least three C 6-40 aromatic rings, R 2 and R 3 are each a hydrogen atom, a C 1-10 alkyl group, a C 6-40 aryl group, a heterocyclic group, or a combination thereof, and the alkyl group, the aryl group, and the heterocyclic group are optionally substituted with a halogen group, a nitro group, an amino group, a formyl group, an alkoxy group, or a hydroxy group, or R 2 and R 3 optionally form a ring together). The above mentioned composition t, wherein R 1 is a divalent organic group derived from N,N′-diphenyl-1,4-phenylenediamine.
1. A resist underlayer film forming composition comprising a polymer having a unit structure of Formula (1):
wherein
R 1 is a divalent organic group derived from a compound of Formula (2):
wherein Ar 1 , Ar 2 , and Ar 3 are each a benzene ring or a naphthalene ring, R 6 , R 7 , and R 8 are each a substituent, and are selected from the group consisting of a halogen group, a nitro group, an amino group, a hydroxy group, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, and a combination thereof, the alkyl group, the alkenyl group, and the aryl group of R 6 , R 7 , and R 8 optionally contain an ether bond, a ketone bond, or an ester bond, R 4 and R 5 are each selected from the group consisting of a hydrogen atom, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, and a combination thereof, the alkyl group, the alkenyl group, and the aryl group of R 4 and R 5 optionally contain an ether bond, a ketone bond, or an ester bond, and n1, n2, and n3 are each an integer of 0 to the maximum number of substitutions possible for each of substituents R 6 , R 7 , and R 8 on the rings of Ar 1 , Ar 2 , and Ar 3 , respectively, and
wherein R 3 is a hydrogen atom, and R 2 is a phenyl group, wherein the phenyl group is optionally substituted with a halogen group, a nitro group, an amino group, a C 1-10 alkyl group, a C 1-10 alkoxy group, a C 6-40 aryl group, a formyl group, a carboxyl group, or a hydroxy group.
2. The resist underlayer film forming composition according to claim 1 , further comprising a crosslinker.
3. The resist underlayer film forming composition according to claim 1 , further comprising an acid and/or an acid generator.
4. A resist underlayer film comprising a cured film of the resist underlayer film forming composition according to claim 1 .
5. A method for producing a semiconductor device comprising steps of:
forming an underlayer film on a semiconductor substrate from the resist underlayer film forming composition according to claim 1 ;
forming a resist film on the underlayer film;
irradiating the resist film with light or an electron beam and developing the resist film to form a resist pattern;
etching the underlayer film through the formed resist pattern; and
processing the semiconductor substrate through the patterned underlayer film.
6. A method for producing a semiconductor device comprising steps of:
forming an underlayer film on a semiconductor substrate from the resist underlayer film forming composition according to claim 1 ;
forming a hard mask on the underlayer film;
forming a resist film on the hard mask;
irradiating the resist film with light or an electron beam and developing the resist film to form a resist pattern;
etching the hard mask through the formed resist pattern;
etching the underlayer film through the patterned hard mask; and
processing the semiconductor substrate through the patterned underlayer film.
7. A resist underlayer film forming composition comprising a polymer, wherein the polymer is selected from the group consisting of polymers having the following structures:
8. The resist underlayer film forming composition according to claim 7 , further comprising a crosslinker.
9. The resist underlayer film forming composition according to claim 7 , further comprising an acid and/or an acid generator.
10. A resist underlayer film comprising a cured film of the resist underlayer film forming composition according to claim 7 .
11. A method for producing a semiconductor device comprising steps of:
forming an underlayer film on a semiconductor substrate from the resist underlayer film forming composition according to claim 7 ;
forming a resist film on the underlayer film;
irradiating the resist film with light or an electron beam and developing the resist film to form a resist pattern;
etching the underlayer film through the formed resist pattern; and
processing the semiconductor substrate through the patterned underlayer film.
12. A method for producing a semiconductor device comprising steps of:
forming an underlayer film on a semiconductor substrate from the resist underlayer film forming composition according to claim 7 ;
forming a hard mask on the underlayer film;
forming a resist film on the hard mask;
irradiating the resist film with light or an electron beam and developing the resist film to form a resist pattern;
etching the hard mask through the formed resist pattern;
etching the underlayer film through the patterned hard mask; and
processing the semiconductor substrate through the patterned underlayer film.