Shielded-gate-trench semiconductor structure and shielded-gate-trench semiconductor device

1 . A shielded-gate-trench (SGT) semiconductor structure, comprising:

a stack of semiconductor layers, comprising:

a plurality of deep trenches, wherein the plurality of deep trenches are parallel to each other;

an oxide layer, formed on an inner surface of each of the plurality of deep trenches;

a source polysilicon layer, disposed into each of the plurality of deep trenches next to the oxide layer; and

a gate polysilicon layer, wherein the gate polysilicon layer is disposed in a top portion of the oxide layer in each of the plurality of deep trenches;

an interlayer insulating layer, formed on the stack of semiconductor layers and covering a top surface of the gate polysilicon layer, a top surface of the oxide layer, and a top surface of the source polysilicon layer in each of the plurality of deep trenches;

a front metal layer, formed on the interlayer insulating layer; and

a plurality of contact terminals, each formed in the interlayer insulating layer and the source polysilicon layer in one of the plurality of deep trenches, wherein a top end of each of the contact terminals is electrically connected to the front metal layer, and a bottom end of each of the contact terminals is inserted into and electrically connected to the source polysilicon layer,

wherein

the SGT semiconductor structure is divided into a source region and a gate region, and one of the deep trenches is formed without contact terminal, and is positioned between two of the contact terminals in the source region.

2 . The SGT semiconductor structure according to claim 1 , wherein the stack of semiconductor layers further comprises:

a semiconductor substrate layer, which is of a first dopant type;

a first semiconductor layer, which is of the first dopant type, formed on the semiconductor substrate layer; and

a second semiconductor layer, which is of a second dopant type, formed on the first semiconductor layer.

3 . The SGT semiconductor structure according to claim 2 , wherein a dopant concentration of the first semiconductor layer is smaller than a dopant concentration of the semiconductor substrate layer.

4 . The SGT semiconductor structure according to claim 2 , wherein the plurality of deep trenches extends from within the semiconductor substrate layer, penetrates through the first semiconductor layer and ends at the second semiconductor layer.

5 . The SGT semiconductor structure according to claim 2 , wherein the interlayer insulating layer is formed on the second semiconductor layer.

6 . The SGT semiconductor structure according to claim 2 , further comprising a back metal layer, wherein the semiconductor substrate layer is formed on the back metal layer.

7 . A SGT semiconductor device, comprising the SGT semiconductor structure according to claim 1 ,

wherein at least three deep trenches of the plurality of deep trenches are located in the source region, and at least one deep trench of the plurality of trenches is located in the gate region;

wherein the front metal layer comprises a source metal layer and a gate metal layer, wherein the source metal layer is located in the source region, the gate metal layer is located in the gate region, wherein the source metal layer and the gate metal layer are located above the interlayer insulating layer and are spaced apart from each other;

wherein the plurality of contact terminals comprise two source contact terminals and two gate contact terminals, wherein the two source contact terminals comprise a first source contact terminal and a second source contact terminal located in the source region, and wherein the gate contact terminals are located in the gate region; wherein

one end of each of the source contact terminals is connected to the source metal layer, another end of each of the source contact terminals is disposed into one of the at least three deep trenches in the source region for connecting to the source polysilicon layer of a corresponding deep trench; and

wherein the two gate contact terminals are disposed into one of the plurality of deep trenches in the gate region, and are respectively connected to the gate polysilicon layer of the corresponding one of the plurality of deep trenches.

8 . The SGT semiconductor device according to claim 7 , further comprising a third source contact terminal, wherein the third source contact terminal is disposed into both the first semiconductor layer and the second semiconductor layer, between two adjacent deep trenches of the at least three deep trenches of the plurality of deep trenches in the source region, and wherein the third source contact terminal is connected to the source metal layer, the first semiconductor layer, and the second semiconductor layer.

9 . A shielded-gate-trench (SGT) semiconductor structure, comprising:

a stack of semiconductor layers, comprising:

a plurality of deep trenches, wherein the plurality of deep trenches are parallel to each other;

an oxide layer, formed on an inner surface of each of the plurality of deep trenches;

a source polysilicon layer, disposed into each of the plurality of deep trenches next to the oxide layer; and

a gate polysilicon layer, wherein the gate polysilicon layer is disposed in a top portion of the oxide layer in each of the plurality of deep trenches;

an interlayer insulating layer, formed on the stack of semiconductor layers;

a front metal layer, formed on the interlayer insulating layer; and

a plurality of contact terminals, each formed in the interlayer insulating layer and the source polysilicon layer in one of the plurality of deep trenches,

wherein

the SGT semiconductor structure is divided into a source region and a gate region, and

one of the deep trenches is formed without contact terminal, and is positioned between two of the contact terminals in the source region.

10 . The SGT semiconductor structure according to claim 9 , wherein the stack of semiconductor layers further comprises:

a semiconductor substrate layer, which is of a first dopant type;

a first semiconductor layer, which is of the first dopant type, formed on the semiconductor substrate layer; and

a second semiconductor layer, which is of a second dopant type, formed on the first semiconductor layer.

11 . The SGT semiconductor structure according to claim 10 , wherein a dopant concentration of the first semiconductor layer is smaller than a dopant concentration of the semiconductor substrate layer.

12 . The SGT semiconductor structure according to claim 10 , wherein the plurality of deep trenches extends from within the semiconductor substrate layer, penetrates through the first semiconductor layer and ends at the second semiconductor layer.

13 . The SGT semiconductor structure according to claim 10 , wherein the interlayer insulating layer is formed on the second semiconductor layer.

14 . The SGT semiconductor structure according to claim 10 , further comprising a back metal layer, wherein the semiconductor substrate layer is formed on the back metal layer.

15 . A SGT semiconductor device, comprising the SGT semiconductor structure according to claim 9 ,

wherein the SGT semiconductor structure is divided into a source region and a gate region, at least three deep trenches of the plurality of deep trenches are located in the source region, and at least one deep trench of the plurality of trenches is located in the gate region;

wherein the front metal layer comprises a source metal layer and a gate metal layer, wherein the source metal layer is located in the source region, the gate metal layer is located in the gate region, wherein the source metal layer and the gate metal layer are located above the interlayer insulating layer and are spaced apart from each other;

wherein the two contact terminals comprise two source contact terminals and two gate contact terminals, wherein the two source contact terminals comprise a first source contact terminal and a second source contact terminal located in the source region, and wherein the gate contact terminals are located in the gate region; wherein one end of each of the source contact terminals is connected to the source metal layer, another end of each of the source contact terminals is disposed into one of the at least three deep trenches in the source region for connecting to the source polysilicon layer of a corresponding deep trench; wherein one of the at least three deep trenches in the source region is formed without a contact terminal, and is positioned between the first source contact terminal and the second source contact terminal; and

wherein the two gate contact terminals are disposed into one of the plurality of deep trenches in the gate region, and are respectively connected to the gate polysilicon layer of the corresponding one of the plurality of deep trenches.

16 . The SGT semiconductor device according to claim 15 , further comprising a third source contact terminal, wherein the third source contact terminal is disposed into both the first semiconductor layer and the second semiconductor layer, between two adjacent deep trenches of the at least three deep trenches of the plurality of deep trenches in the source region, and wherein the third source contact terminal is connected to the source metal layer, the first semiconductor layer, and the second semiconductor layer.

17 . The SGT semiconductor structure according to claim 9 , wherein the interlayer insulating layer covers a top surface of the gate polysilicon layer, a top surface of the oxide layer, and a top surface of the source polysilicon layer in each of the plurality of deep trenches.

18 . The SGT semiconductor structure according to claim 9 , wherein a top end of each of the contact terminals is electrically connected to the front metal layer, and a bottom end of each of the contact terminals is inserted into and electrically connected to the source polysilicon layer.