Solid-state imaging element and electronic equipment
The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.
1. A light detecting device, comprising:
a plurality of pixels, wherein each pixel in the plurality of pixels includes a photoelectric conversion section; and
a grid-patterned inter-pixel separation section separating the photoelectric conversion section of each pixel from one or more adjacent pixels, wherein the grid-patterned inter-pixel separation section includes a protruding section in a plan view;
wherein a first pixel of the plurality of pixels includes a first color filter that is configured to transmit red light,
wherein a second pixel of the plurality of pixels includes a second color filter that is configured to transmit green light,
wherein the first pixel is adjacent to the second pixel in the plan view, and
wherein a position of the protruding section in the first pixel is different from a position of the protruding section in the second pixel in the plan view.
2. The light detecting device according to claim 1 , wherein
the protruding section includes a first part and a second part at least in the plan view.
3. The light detecting device according to claim 2 , wherein
the first part faces the second part in the plan view.
4. The light detecting device according to claim 1 , wherein
the grid-patterned inter-pixel separation section includes a deep trench isolation (DTI).
5. The light detecting device according to claim 4 , wherein
the grid-patterned inter-pixel separation section is formed in a substrate from a surface side opposite to a light incident surface.
6. The light detecting device according to claim 1 , further comprising:
a region between the grid-patterned inter-pixel separation section and the photoelectric conversion section, the region being different in conductivity type from the photoelectric conversion section.
7. The light detecting device according to claim 6 , wherein
the region is disposed along a shape of the protruding section in the plan view.
8. The light detecting device according to claim 1 , wherein
the grid-patterned inter-pixel separation section includes a material having a refractive index lower than a refractive index of a material of the photoelectric conversion section.
9. The light detecting device according to claim 1 , further comprising:
a third pixel including a third color filter that is configured to transmit blue light, wherein
the third pixel does not include the protruding section.
10. An electronic device, comprising:
a light detecting device, including:
a plurality of pixels, wherein each pixel in the plurality of pixels includes a photoelectric conversion section; and
a grid-patterned inter-pixel separation section separating the photoelectric conversion section of each pixel from one or more adjacent pixels, wherein the grid-patterned inter-pixel separation section includes a protruding section in a plan view;
wherein a first pixel of the plurality of pixels includes a first color filter that is configured to transmit red light,
wherein a second pixel of the plurality of pixels includes a second color filter that is configured to transmit green light,
wherein the first pixel is adjacent to the second pixel in the plan view, and
wherein a position of the protruding section in the first pixel is different from a position of the protruding section in the second pixel in the plan view.
11. The electronic device according to claim 10 , wherein the protruding section includes a first part and a second part at least in the plan view.
12. The electronic device according to claim 11 , wherein the first part faces the second part in the plan view.
13. The electronic device according to claim 10 , wherein the grid-patterned inter-pixel separation section includes a deep trench isolation (DTI).
14. The electronic device according to claim 13 , wherein the grid-patterned inter-pixel separation section is formed in a substrate from a surface side opposite to a light incident surface.
15. The electronic device according to claim 10 , further comprising:
a region between the grid-patterned inter-pixel separation section and the photoelectric conversion section, the region being different in conductivity type from the photoelectric conversion section.
16. The electronic device according to claim 15 , wherein the region is disposed along a shape of the protruding section in the plan view.
17. The electronic device according to claim 10 , wherein
the grid-patterned inter-pixel separation section includes a material having a refractive index lower than a refractive index of a material of the photoelectric conversion section.
18. The electronic device according to claim 10 , further comprising:
a third pixel including a third color filter that is configured to transmit blue light, wherein
the third pixel does not include the protruding section.