IP Library Granted Patent US 12,068,476
Granted Patent B2
US 12,068,476 · App. 17/953,588 · Granted Aug 20, 2024

Multilayer anodes for lithium-based energy storage devices

Inventors: John C. Brewer (Rochester, NY); Paul D. Garman (Pittsford, NY); Bernard Philip Gridley (Rochester, NY); Robert G. Anstey (Tonawanda, NY); Kevin Tanzil (Rochester, NY)
Assignee: Graphenix Development, Inc.
H01M4/366H01M4/13H01M4/38H01M4/62H01M4/664H01M10/0525H01M2004/021
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Quick Facts
Patent No.
US 12,068,476
App. No.
17/953,588
Granted
Aug 20, 2024
Kind
B2
Abstract

A method of making an anode for an energy storage device such as a lithium-ion energy storage device is disclosed. The method may include depositing a first lithium storage layer over a current collector by a first CVD process. The current collector may include a metal oxide layer, and the first lithium storage layer is deposited onto the metal oxide layer. The method may also include forming a first intermediate layer over at least a portion of the first lithium storage layer. The method may further include depositing a second lithium storage layer over the first intermediate layer by a second CVD process. At least the first lithium storage layer may be a continuous porous lithium storage layer having a total content of silicon, germanium, or a combination thereof, of at least 40 atomic %.

Claims (24)

1. A method of making an anode for use in an energy storage device, the method comprising:

depositing a first lithium storage layer over a current collector by a first CVD process, wherein the current collector comprises a metal oxide layer and the first lithium storage layer is deposited onto the metal oxide layer;

forming a first intermediate layer over at least a portion of the first lithium storage layer; and

depositing a second lithium storage layer over the first intermediate layer by a second CVD process,

wherein at least the first lithium storage layer is a continuous porous lithium storage layer comprising a total content of silicon, germanium, or a combination thereof, of at least 40 atomic %.

2. The method of claim 1 , wherein the continuous porous lithium storage layer comprises at least 85 atomic % amorphous silicon, and the continuous porous lithium storage layer has a density in a range of 1.1 g/cm 3 to 2.2 g/cm 3 .

3. The method of claim 1 , wherein the continuous porous lithium storage layer is a first continuous porous lithium storage layer, the second lithium storage layer is a second continuous porous lithium storage layer comprising a total content of silicon, germanium, or a combination thereof, of at least 40 atomic %.

4. The method of claim 1 , wherein the continuous porous lithium storage layer is a first continuous porous lithium storage layer, the second lithium storage layer is a second continuous porous lithium storage layer comprising at least 85 atomic % amorphous silicon.

5. The method according of claim 1 , wherein one or both of the first CVD process and the second CVD process comprise PECVD.

6. The method of claim 1 , wherein one or both of the first lithium storage layer and the second lithium storage layer have an average thickness of at least 3 μm.

7. The method of claim 1 , wherein forming the first intermediate layer comprises depositing an electrically conductive metal onto the first lithium storage layer.

8. The method of claim 7 , wherein the electrically conductive metal comprises a transition metal.

9. The method of claim 8 , wherein the transition metal is nickel, titanium, copper, or zinc.

10. The method of claim 7 , further comprising oxidizing at least a portion of the metal to form the first intermediate layer comprising a metal oxide.

11. The method of claim 7 , wherein the metal is deposited by vapor deposition, sputtering, or a CVD process.

12. The method of claim 1 , wherein forming the first intermediate layer comprises depositing a metal oxide, a metal nitride, a metal oxynitride, a metal sulfide, or a metal oxysulfide.

13. The method of claim 12 , wherein the metal oxide, the metal nitride, the metal oxynitride, the metal sulfide, or the metal oxysulfide comprises a transition metal.

14. The method of claim 12 , wherein the deposition of the metal oxide, the metal nitride, the metal oxynitride, the metal sulfide, or the metal oxysulfide comprises vapor deposition, sputtering, atomic layer deposition, or a CVD process.

15. The method of claim 1 , wherein forming the first intermediate layer comprises depositing a solution or dispersion comprising an intermediate layer material or precursor over the first lithium storage layer.

16. The method of claim 1 , wherein forming at least one intermediate layer comprises a patterning process.

17. The method of claim 16 , wherein the patterning process comprises patterned printing, photolithography, or vapor deposition through a shadow mask.

18. The method of claim 1 , further comprising thermally treating the anode after deposition of the second lithium storage layer is complete and prior to battery assembly,

wherein the thermally treating includes heating the anode to a temperature in a range of 100° C. to 600° C. for a time period in a range of 0.1 min to 120 min.

19. The method of claim 1 , wherein the metal oxide layer comprises a tin oxide or a zinc oxide.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2022
From: BREWER, JOHN C.; GARMAN, PAUL D.; GRIDLEY, BERNARD PHILIP; ANSTEY, ROBERT G.; TANZIL, KEVIN
To: GRAPHENIX DEVELOPMENT, INC.
Reel/Frame 061224/0643 →
Continuity (3)
Continuation 16997110 · Aug 19, 2020
Provisional Application 62889119 · Aug 20, 2019
Related Publication 20230014638A1 · Jan 19, 2023
Cited By (1)
US 12,355,072