Transversely-excited film bulk acoustic resonators and filters with trap-rich layer
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces. The substrate includes a silicon base having a trap-rich region adjacent to a surface and a dielectric layer on the surface. The back surface of the piezoelectric plate faces the dielectric layer. The piezoelectric plate comprises a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is provided on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are on the diaphragm.
1. An acoustic resonator device comprising:
a substrate comprising:
a silicon base having a surface, and
a trap-rich region adjacent to the surface;
a dielectric layer adjacent to the trap rich region;
a piezoelectric layer having front and back surfaces, the back surface facing the dielectric layer, the piezoelectric layer including a diaphragm that is over a cavity; and
an interdigital transducer (IDT) on the front surface of the piezoelectric layer such that interleaved fingers of the IDT are on the diaphragm.
2. The acoustic resonator device of claim 1 , wherein at least a portion of the back surface of the piezoelectric layer is bonded to the dielectric layer.
3. The acoustic resonator device of claim 1 , wherein the cavity is in the dielectric layer.
4. The acoustic resonator device of claim 1 , wherein the dielectric layer is silicon dioxide.
5. The acoustic resonator device of claim 1 , wherein the trap- rich region comprises at least one of a layer of amorphous silicon, a layer of polycrystalline silicon, a portion of the silicon base that contains deep trap impurities, and a portion of the silicon base that has been irradiated to create defects in the crystalline structure of the silicon base.
6. The acoustic resonator device of claim 5 , wherein the trap- rich region is polycrystalline silicon, and an average grain size of the polycrystalline silicon is smaller than a minimum spacing between the fingers.
7. The acoustic resonator device of claim 1 , wherein a depth, normal to the surface, of the trap-rich region is greater than a depth of an inversion layer that would form in the silicon base in the absence of the trap-rich region.
8. The acoustic resonator device of claim 1 , wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode within the diaphragm.
9. The acoustic resonator device of claim 8 , wherein the piezoelectric layer is one of lithium niobate and lithium tantalate.
10. The acoustic resonator device of claim 9 , wherein the piezoelectric layer is one of Z-cut, rotated Z-cut, and rotated YX-cut.
11. A filter device, comprising:
a plurality of bulk acoustic wave (BAW) devices that each comprise:
a substrate comprising:
a silicon base having a surface, and
a trap-rich region adjacent to the surface;
a dielectric layer adjacent to the surface;
a piezoelectric layer having front and back surfaces, the back surface facing the dielectric layer, the piezoelectric layer comprising a diaphragm that is over a cavity; and
a conductor pattern on the front surface and including an interdigital transducer (IDT) that is on the respective diaphragm.
12. The filter device of claim 11 , wherein at least a portion of the back surface of the piezoelectric layer is bonded to the dielectric layer.
13. The filter device of claim 11 , wherein the respective cavities of each of the plurality of BAW devices are in the respective dielectric layer.
14. The filter device of claim 11 , wherein the dielectric layer of each of the plurality of BAW devices is silicon dioxide.
15. The filter device of claim 11 , wherein the piezoelectric layer and the IDT of each of the plurality of BAW devices are configured such that a radio frequency signal applied to the respective IDT excites a primary shear acoustic mode within the diaphragm.
16. The filter device of claim 15 , wherein the piezoelectric layer of each of the plurality of BAW devices is one of lithium niobate and lithium tantalate.
17. The filter device of claim 11 , wherein a depth, normal to the surface, of the trap-rich region of each of the plurality of BAW devices is greater than a depth of an inversion layer that would form in the silicon base in the absence of the trap-rich region.
18. The filter device of claim 16 , wherein the piezoelectric layer of each of the plurality of BAW devices is one of Z-cut, rotated Z-cut, and rotated YX-cut.
19. The filter device of claim 16 , wherein the trap-rich region of each of the plurality of BAW devices comprises at least one of a layer of amorphous silicon, a layer of polycrystalline silicon, a portion of the silicon base that contains deep trap impurities, and a portion of the silicon base that has been irradiated to create defects in the crystalline structure of the silicon base.
20. The filter device of claim 19 , wherein the trap-rich region of each of the plurality of BAW devices is polycrystalline silicon, and an average grain size of the polycrystalline silicon is smaller than a minimum spacing between the fingers.