IP Library Granted Patent US 12,362,725
Granted Patent B2
US 12,362,725 · App. 17/958,311 · Granted Jul 15, 2025

Transversely-excited film bulk acoustic filters with excess piezoelectric material removed

Inventor: Ventsislav Yantchev (Sofia, BG)
Assignee: MURATA MANUFACTURING CO., LTD.
H03H9/568H03H3/02H03H9/02228H03H9/205
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,362,725
App. No.
17/958,311
Granted
Jul 15, 2025
Kind
B2
Abstract

Filter devices and fabrication methods are disclosed. A filter device includes a piezoelectric plate and a conductor pattern on a front surface of the piezoelectric plate. The conductor pattern includes interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs) and a plurality of conductors connecting the plurality of XBARs in a ladder filter circuit architecture. The plurality of conductors includes a first conductor adjacent to a second conductor. An opening is provided through the piezoelectric plate between the first conductor and the second conductor.

Claims (45)

1. A filter device comprising:

a piezoelectric layer;

a conductor pattern on a surface of the piezoelectric layer, the conductor pattern comprising:

interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs), and

a plurality of conductors connecting the IDTs of the plurality of XBARs in a ladder filter circuit architecture, the plurality of conductors including a first conductor adjacent to a second conductor; and

an opening through the piezoelectric layer between the first conductor and the second conductor,

wherein the opening comprises a width that is less than a distance between the first conductor and the second conductor.

2. The filter device of claim 1 , further comprising:

a substrate,

wherein the piezoelectric layer is attached to the substrate, and

wherein interleaved fingers of each of the plurality of IDTs are on respective portions of the piezoelectric layer that span respective cavities in the substrate.

3. The filter device of claim 2 , wherein:

the substrate comprises a base and an intermediate layer between the base and the piezoelectric layer, and

the cavities are in the intermediate layer.

4. The filter device of claim 3 , wherein all of the intermediate layer is removed where the opening extends through the piezoelectric layer between the first conductor and the second conductor.

5. The filter device of claim 1 , further comprising one or more additional openings through the piezoelectric layer between other adjacent conductors of the plurality of conductors.

6. The filter device of claim 1 , further comprising additional openings through the piezoelectric layer between all other pairs of adjacent conductors of the plurality of conductors.

7. The filter device of claim 1 , wherein the first conductor is a signal conductor and the second conductor is a ground conductor.

8. The filter device of claim 1 , wherein the first conductor and the second conductor are signal conductors.

9. A method for fabricating a filter device comprising:

forming a conductor pattern on a surface of a piezoelectric layer, the conductor pattern comprising:

interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs), and

a plurality of conductors connecting the IDTs of the plurality of XBARs in a ladder filter circuit architecture, the plurality of conductors including a first conductor adjacent to a second conductor; and

forming an opening through the piezoelectric layer between the first conductor and the second conductor,

wherein the opening comprises a width that is less than a distance between the first conductor and the second conductor.

10. The method of claim 9 , wherein the first conductor is a signal conductor and the second conductor is a ground conductor.

11. The method of claim 9 , wherein the first conductor and the second conductor are signal conductors.

12. The method of claim 9 , wherein the opening encompasses practically all of an area between adjacent portions of the first and second conductors.

13. The method of claim 9 , wherein forming the opening further comprises forming one or more additional openings through the piezoelectric layer between other adjacent conductors from the plurality of conductors.

14. The method of claim 9 , wherein forming the opening further comprises forming additional openings through the piezoelectric layer between all other pairs of adjacent conductors from the plurality of conductors.

15. The method of claim 9 , further comprising:

attaching the piezoelectric layer to a substrate,

wherein interleaved fingers of the plurality of IDTs are on a respective portions of the piezoelectric layer that span respective cavities in the substrate.

16. The method of claim 9 , wherein:

the substrate comprises a base and an intermediate layer between the base and the piezoelectric layer, and

the cavities are in the intermediate layer.

17. The method of claim 16 , further comprising removing all of the intermediate layer to form the opening that extends through the piezoelectric layer between the first conductor and the second conductor.

18. A filter device comprising:

a piezoelectric layer;

a conductor pattern on a surface of the piezoelectric layer, the conductor pattern comprising:

interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs), and

a plurality of conductors connecting the IDTs of the plurality of XBARs in a ladder filter circuit architecture, the plurality of conductors including a first conductor adjacent to a second conductor; and

an opening through the piezoelectric layer between the first conductor and the second conductor,

wherein the opening encompasses practically all of an area between adjacent portions of the first and second conductors.

19. The filter device of claim 18 , wherein the opening that encompasses practically all of the area between adjacent portions of the first and second conductors is as large an area as possible as limited by manufacturing tolerances of the filter device.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2022
From: RESONANT INC.
To: MURATA MANUFACTURING CO., LTD
Reel/Frame 061966/0748 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2022
From: YANTCHEV, VENTSISLAV
To: RESONANT INC.
Reel/Frame 061288/0090 →
Continuity (3)
Continuation In Part 17123029 · Dec 15, 2020
Provisional Application 63113301 · Nov 13, 2020
Related Publication 20230024966A1 · Jan 26, 2023
References Cited (85)
US 5853601A · Krishaswamy et al. · 1998 [cited by applicant]
US 6540827B1 · Levy et al. · 2003 [cited by applicant]
US 6707229B1 · Martin · 2004 [cited by applicant]
US 7105980B2 · Abbott et al. · 2006 [cited by applicant]
US 7463118B2 · Jacobsen · 2008 [cited by applicant]
US 7535152B2 · Ogami et al. · 2009 [cited by applicant]
US 7684109B2 · Godshalk et al. · 2010 [cited by applicant]
US 7868519B2 · Umeda · 2011 [cited by applicant]
US 8278802B1 · Lee et al. · 2012 [cited by applicant]
US 8344815B2 · Yamanaka · 2013 [cited by applicant]
US 8829766B2 · Milyutin et al. · 2014 [cited by applicant]
US 8932686B2 · Hayakawa et al. · 2015 [cited by applicant]
US 9130145B2 · Martin et al. · 2015 [cited by applicant]
US 9219466B2 · Meltaus et al. · 2015 [cited by applicant]
US 9276557B1 · Nordquist et al. · 2016 [cited by applicant]
US 9369105B1 · Li et al. · 2016 [cited by applicant]
US 9425765B2 · Rinaldi et al. · 2016 [cited by applicant]
US 9525398B1 · Olsson et al. · 2016 [cited by applicant]
US 9748923B2 · Kando et al. · 2017 [cited by applicant]
US 9780759B2 · Kimura et al. · 2017 [cited by applicant]
US 10200013B2 · Bower et al. · 2019 [cited by applicant]
US 10491192B1 · Plesski et al. · 2019 [cited by applicant]
US 10601392B2 · Plesski et al. · 2020 [cited by applicant]
US 10637438B2 · Garcia et al. · 2020 [cited by applicant]
US 10756697B2 · Plesski et al. · 2020 [cited by applicant]
US 10790802B2 · Yantchev et al. · 2020 [cited by applicant]
US 10797675B2 · Plesski · 2020 [cited by applicant]
US 10826462B2 · Plesski et al. · 2020 [cited by applicant]
US 11496113B2 · Yantchev · 2022 [cited by applicant]
US 20020079986A1 · Ruby et al. · 2002 [cited by applicant]
US 20020158714A1 · Kaitila et al. · 2002 [cited by applicant]
US 20030199105A1 · Kub et al. · 2003 [cited by applicant]
US 20040261250A1 · Kadota et al. · 2004 [cited by applicant]
US 20070194863A1 · Shibata et al. · 2007 [cited by applicant]
US 20100064492A1 · Tanaka · 2010 [cited by applicant]
US 20100123367A1 · Tai et al. · 2010 [cited by applicant]
US 20110109196A1 · Goto et al. · 2011 [cited by applicant]
US 20110278993A1 · Iwamoto · 2011 [cited by applicant]
US 20120274416A1 · Hara et al. · 2012 [cited by applicant]
US 20130234805A1 · Takahashi · 2013 [cited by applicant]
US 20130321100A1 · Wang · 2013 [cited by applicant]
US 20140009032A1 · Takahashi et al. · 2014 [cited by applicant]
US 20140145556A1 · Kadota · 2014 [cited by applicant]
US 20140151151A1 · Reinhardt · 2014 [cited by applicant]
US 20140152145A1 · Kando et al. · 2014 [cited by applicant]
US 20140173862A1 · Kando et al. · 2014 [cited by applicant]
US 20150319537A1 · Perois et al. · 2015 [cited by applicant]
US 20150333730A1 · Meltaus et al. · 2015 [cited by applicant]
US 20160028367A1 · Shealy · 2016 [cited by applicant]
US 20160182009A1 · Bhattacharjee · 2016 [cited by applicant]
US 20170063332A1 · Gilbert et al. · 2017 [cited by applicant]
US 20170179928A1 · Raihn et al. · 2017 [cited by applicant]
US 20170214387A1 · Burak et al. · 2017 [cited by applicant]
US 20170222622A1 · Solal et al. · 2017 [cited by applicant]
US 20170370791A1 · Nakamura et al. · 2017 [cited by applicant]
US 20180123016A1 · Gong et al. · 2018 [cited by applicant]
US 20180152169A1 · Goto et al. · 2018 [cited by applicant]
US 20180191322A1 · Chang et al. · 2018 [cited by applicant]
US 20190068164A1 · Houlden et al. · 2019 [cited by applicant]
US 20190123721A1 · Takamine · 2019 [cited by applicant]
US 20190131953A1 · Gong et al. · 2019 [cited by applicant]
US 20190273480A1 · Lin et al. · 2019 [cited by applicant]
US 20200328728A1 · Nakagawa et al. · 2020 [cited by applicant]
JP 2018093487A · 2018 [cited by applicant]
WO 2016017104A1 · 2016 [cited by applicant]
WO 2016052129 · 2016 [cited by applicant]
WO 2018003273A1 · 2018 [cited by applicant]
WO 20190138810A1 · 2019 [cited by applicant]
Acoustic Properties of Solids, ONDA Corporation, Apr. 11, 2003, pp. 5. [cited by applicant]
Bahreynl, B., “Fabrication and Design of Resonant Microdevices,” Norwich, NY, William Andrew, Inc., 2008, 5 pages. [cited by applicant]
Diaphragm Definition and Meaning, Merriam-Webster, since 1828, 1 page. [cited by applicant]
Ekeom et al., “Solidly Mounted Resonator (SMR) FEM-BEM Simulation,” Proceedings of the IEEE Ultrasonics Symposium, Nov. 2006, 5 pages. [cited by applicant]
International Search Report and Written Opinion in PCT/US2019/058632, mailed Jan. 17, 2020, 8 pages. [cited by applicant]
International Search Report and Written Opinion in PCT/US2019/36433, mailed Aug. 29, 2019, 9 pages. [cited by applicant]
Kadota et al., “Wideband acoustic wave resonators composed of hetero acoustic layer structure,” Japanese Journal of Applied Physics, 2018, vol. 57, 07LD12, 4 pages. [cited by applicant]
Manohar, G., “Investigation of Various Surface Acoustic Wave Design Configurations for Improved Sensitivity,” Doctoral Dissertation, Jan. 2017, University of South Florida, 112 pages. [cited by applicant]
Material Properties of Tibtech Innovations, TIBTECH Innovations, 2018, 1 page. [cited by applicant]
Mizutaui et al., “Analysis of Lamb Wave Propagation Characteristics in Rotated Y-Cut X-Propagation LiNbO3 Plates,” Electronics and Communications in Japan (Part 1: Communications), 1986, vol. 69, No. 4, pp. 47-55. [cited by applicant]
Moussa et al., “Review on Triggered Liposomal Drug Delivery with a Focus on Ultrasound,” Current Cancer Drug Targets, 2015, vol. 15, No. 4, pp. 1-34. [cited by applicant]
Naumenko et al., “Optimal orientations of Lithium Niobate for resonator SAW filters,” 2003 IEEE Ultrasonics Symposium, Oct. 5-8, 2003, Honolulu, Hawaii, pp. 2110-2113. [cited by applicant]
Olsson III et al., “A high electromechanical coupling coefficient SH0 Lamb wave lithium niobate micromechanical resonator and a method for fabrication,” Sensors and Actuators A: Phyiscal, 2014, vol. 209, pp. 183-190. [cited by applicant]
Safari et al., “Piezoelectric for Transducer Applications,” Elsevier Science Ltd., 2000, pp. 4 (29 pages). [cited by applicant]
Takai et al., “I.H.P.Saw Technology and its Application to Microacoustic Components (Invited),” 2017 IEEE International Ultrasonics Symposium (IUS), 2017, pp. 1-8. [cited by applicant]
Yang et al., “5 GHZ lithium niobate MEMS resonators with high FoM of 153,” 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS), 2017, pp. 942-945. [cited by applicant]
Yang et al., “Toward Ka Band Acoustics: Lithium Niobat Asymmetrical Mode Piezoelectric MEMS Resonators,” 2018 EEE International Frequency Control Symposium (IFCS), 2018, 5 pages. [cited by applicant]