Bidirectional power switch
A unidirectional power switch includes: a normally-on switch device having a normally-on gate, a source, and a drain; a normally-off switch device having a normally-off gate, a source, and a drain, the drain of the normally-off switch device being electrically connected to the source of the normally-on switch device in a cascode configuration; a first source terminal electrically connected to the source of the normally-off switch device; a second source terminal electrically connected to the source of the normally-on switch device; and a drain terminal electrically connected to the drain of the normally-on switch device. The unidirectional power switch is configurable as either a normally-off unidirectional switch or a normally-on unidirectional switch, depending on a configuration of external gate driver connections to the source terminals. Additional power switch embodiments and related methods of configuring the power switches are described, including a configurable bidirectional power switch.
1. A bidirectional power switch, comprising:
a normally-on bidirectional switch device having a first normally-on gate, a second normally-on gate, a first source, and a second source;
a first normally-off switch device having a normally-off gate, a source, and a drain;
a second normally-off switch device having a normally-off gate, a source, and a drain, wherein the drain of the first normally-off switch device is electrically connected to the first source of the normally-on bidirectional switch device and the drain of the second normally-off switch device is electrically connected to the second source of the normally-on bidirectional switch device in a cascode configuration;
a first source terminal electrically connected to the source of the first normally-off switch device;
a second source terminal electrically connected to the source of the second normally-off switch device;
a third source terminal electrically connected to the first source of the normally-on bidirectional switch device;
a fourth source terminal electrically connected to the second source of the normally-on bidirectional switch device;
a first gate driver connected between the first source terminal and the third source terminal; and
a second gate driver connected between the second source terminal and the fourth source terminal,
wherein the bidirectional power switch is configured as a normally-on bidirectional switch.
2. The bidirectional power switch of claim 1 , wherein the normally-on bidirectional switch device, the first normally-off switch device, and the second normally-off switch device are integrated in a same GaN semiconductor die.
3. The bidirectional power switch of claim 1 , wherein the normally-on bidirectional switch device is disposed in a first die that comprises GaN, the first normally-off switch device is disposed in a second die that comprises GaN or Si, and the second normally-off switch device is disposed in a third die that comprises GaN or Si, and wherein the first die, the second die, and the third die are integrated in a same molded package.
4. The bidirectional power switch of claim 1 , further comprising:
a first diode having an anode electrically connected to the first normally-on gate of the normally-on bidirectional switch device and a cathode electrically connected to the source of first normally-off switch device; and
a second diode having an anode electrically connected to the second normally-on gate of the normally-on bidirectional switch device and a cathode electrically connected to the source of second normally-off switch device.
5. The bidirectional power switch of claim 4 , wherein the normally-on bidirectional switch device, the first diode, and the second diode are integrated in a same GaN semiconductor die.
6. The bidirectional power switch of claim 5 , wherein the first normally-off switch device and the second normally-off switch device are integrated in the same GaN semiconductor die as the normally-on bidirectional switch device, the first diode, and the second diode.
7. The bidirectional power switch of claim 5 , wherein the first normally-off switch device is disposed in a first Si semiconductor die and the second normally-off switch device is disposed in a second Si semiconductor die, and wherein the GaN semiconductor die, the first Si semiconductor die, and the second Si semiconductor die are integrated in a same molded package.
8. The bidirectional power switch of claim 4 , wherein the normally-on bidirectional switch device has a breakdown voltage of 600V or higher, and wherein both the first diode and the second diode have a breakdown voltage of 20V or less.
9. The bidirectional power switch of claim 1 , wherein the normally-on bidirectional switch device is a GaN HEMT (high-electron mobility transistor), wherein the first normally-off switch device is a Si power MOSFET (metal-oxide-semiconductor field-effect transistor), and wherein the second normally-off switch device is a Si power MOSFET.
10. The bidirectional power switch of claim 1 , further comprising:
a first gate terminal electrically connected to the normally-off gate of the first normally-off switch device;
a second gate terminal electrically connected to the normally-off gate of the second normally-off switch device;
a third gate terminal electrically connected to the first normally-on gate of the normally-on bidirectional switch device; and
a fourth gate terminal electrically connected to the second normally-on gate of the normally-on bidirectional switch device.
11. A bidirectional power switch, comprising:
a normally-on bidirectional switch device having a first normally-on gate, a second normally-on gate, a first source, and a second source;
a first normally-off switch device having a normally-off gate, a source, and a drain;
a second normally-off switch device having a normally-off gate, a source, and a drain, wherein the drain of the first normally-off switch device is electrically connected to the first source of the normally-on bidirectional switch device and the drain of the second normally-off switch device is electrically connected to the second source of the normally-on bidirectional switch device in a cascode configuration;
a first source terminal electrically connected to the source of the first normally-off switch device;
a second source terminal electrically connected to the source of the second normally-off switch device;
a third source terminal electrically connected to the first source of the normally-on bidirectional switch device;
a fourth source terminal electrically connected to the second source of the normally-on bidirectional switch device;
a first gate driver connected between the first source terminal and the gate of the first normally-off switch device; and
a second gate driver connected between the second source terminal and the fourth source terminal,
wherein the bidirectional power switch is configured as a hybrid bidirectional switch.
12. The bidirectional power switch of claim 11 , wherein the normally-on bidirectional switch device, the first normally-off switch device, and the second normally-off switch device are integrated in a same GaN semiconductor die.
13. The bidirectional power switch of claim 11 , wherein the normally-on bidirectional switch device is disposed in a first die that comprises GaN, the first normally-off switch device is disposed in a second die that comprises GaN or Si, and the second normally-off switch device is disposed in a third die that comprises GaN or Si, and wherein the first die, the second die, and the third die are integrated in a same molded package.
14. The bidirectional power switch of claim 11 , further comprising:
a first diode having an anode electrically connected to the first normally-on gate of the normally-on bidirectional switch device and a cathode electrically connected to the source of first normally-off switch device; and
a second diode having an anode electrically connected to the second normally-on gate of the normally-on bidirectional switch device and a cathode electrically connected to the source of second normally-off switch device.
15. The bidirectional power switch of claim 14 , wherein the normally-on bidirectional switch device, the first diode, and the second diode are integrated in a same GaN semiconductor die.
16. The bidirectional power switch of claim 15 , wherein the first normally-off switch device and the second normally-off switch device are integrated in the same GaN semiconductor die as the normally-on bidirectional switch device, the first diode, and the second diode.
17. The bidirectional power switch of claim 15 , wherein the first normally-off switch device is disposed in a first Si semiconductor die and the second normally-off switch device is disposed in a second Si semiconductor die, and wherein the GaN semiconductor die, the first Si semiconductor die, and the second Si semiconductor die are integrated in a same molded package.
18. The bidirectional power switch of claim 14 , wherein the normally-on bidirectional switch device has a breakdown voltage of 600V or higher, and wherein both the first diode and the second diode have a breakdown voltage of 20V or less.
19. The bidirectional power switch of claim 11 , wherein the normally-on bidirectional switch device is a GaN HEMT (high-electron mobility transistor), wherein the first normally-off switch device is a Si power MOSFET (metal-oxide-semiconductor field-effect transistor), and wherein the second normally-off switch device is a Si power MOSFET.
20. The bidirectional power switch of claim 11 , further comprising:
a first gate terminal electrically connected to the normally-off gate of the first normally-off switch device;
a second gate terminal electrically connected to the normally-off gate of the second normally-off switch device;
a third gate terminal electrically connected to the first normally-on gate of the normally-on bidirectional switch device; and
a fourth gate terminal electrically connected to the second normally-on gate of the normally-on bidirectional switch device.