Cascode-based switch device with voltage clamp circuit
A switch device includes: a first power transistor die including a normally-on power transistor; a second power transistor die including a normally-off power transistor having a drain electrically connected to a source of the normally-on power transistor to form a cascode device; and a capacitor electrically connected between a gate of the normally-on power transistor and a source of the normally-off power transistor. Both power transistors have at most half a maximum rated drain-to-source voltage as the switch device. The second power transistor die further includes a voltage clamp circuit having a normally-off clamp transistor with a drain electrically connected to the gate of the normally-on power transistor and a source electrically connected to the source of the normally-off power transistor, and diode(s) between the drain and a gate of the normally-off clamp transistor. Additional switch devices embodiments are described.
1 . A switch device, comprising:
a first power transistor die that includes a normally-on power transistor having at most half a maximum rated drain-to-source voltage as the switch device;
a second power transistor die that includes a normally-off power transistor having at most half the maximum rated drain-to-source voltage as the switch device, wherein a drain of the normally-off power transistor is electrically connected to a source of the normally-on power transistor to form a cascode device; and
a first capacitor electrically connected between a gate of the normally-on power transistor and a source of the normally-off power transistor,
wherein the second power transistor die further includes a voltage clamp circuit comprising a normally-off clamp transistor having a drain electrically connected to the gate of the normally-on power transistor and a source electrically connected to the source of the normally-off power transistor, and one or more diodes between the drain and a gate of the normally-off clamp transistor.
2 . The switch device of claim 1 , wherein the normally-on power transistor is a normally-on GaN transistor, wherein the normally-off power transistor is a normally-off GaN transistor, and wherein the maximum rated drain-to-source voltage of the switch device is 800V or higher.
3 . The switch device of claim 1 , wherein the voltage clamp circuit further comprises a pulldown device configured to prevent turn on of the normally-off clamp transistor during dynamic switching of the switch device.
4 . The switch device of claim 3 , wherein the pulldown device comprises:
a normally-on pulldown transistor having a drain electrically connected to the gate of the normally-off clamp transistor, a source electrically connected to the source of the normally-off clamp transistor, and a gate electrically connected to the source of the normally-off power transistor; and
a voltage clamp between the source of the normally-on pulldown transistor and the source of the normally-off power transistor.
5 . The switch device of claim 4 , wherein the pulldown device further comprises:
a resistor electrically connected between the gate and the source of the normally-off clamp transistor.
6 . The switch device of claim 1 , further comprising an overvoltage protection circuit configured to turn off the normally-on power transistor when the normally-off power transistor turns off, such that the cascode device is actively controlled only by a gate of the normally-off power transistor.
7 . The switch device of claim 6 , wherein the overvoltage protection circuit comprises one or more diodes in series between the gate and the source of the normally-on power transistor, wherein an anode of a first one of the one or more diodes of the overvoltage protection circuit is electrically connected to the source of the normally-on power transistor, and wherein a cathode of a last one of the one or more diodes of the overvoltage protection circuit is electrically connected to the gate of the normally-on power transistor.
8 . The switch device of claim 7 , further comprising:
a capacitor in parallel with the one or more diodes of the overvoltage protection circuit.
9 . A switch device, comprising:
a first power transistor die that includes a first bidirectional power switch comprising a first source, a second source, a normally-off gate, and a normally-on gate;
a second power transistor die that includes a second bidirectional power switch comprising a first source electrically connected to the second source of the first bidirectional power switch to form a cascode device, a second source, a normally-off gate, and a normally-on gate;
a first capacitor electrically connected between the normally-on gate of the second bidirectional power switch and the first source of the first bidirectional power switch; and
a second capacitor electrically connected between the normally-on gate of the first bidirectional power switch and the second source of the second bidirectional power switch,
wherein the first power transistor die further includes a first voltage clamp circuit comprising a first bidirectional clamp switch having a first gate, a second gate, a first source electrically connected to the first source of the first bidirectional power switch, and a second source electrically connected to the normally-on gate of the second bidirectional power switch, and one or more diodes between the first gate and the second source of the first bidirectional clamp switch,
wherein the second power transistor die further includes a second voltage clamp circuit comprising a second bidirectional clamp switch having a first gate, a second gate, a first source electrically connected to the normally-on gate of the first bidirectional power switch, and a second source electrically connected to the second source of the second bidirectional power switch, and one or more diodes between the second gate and the first source of the second bidirectional clamp switch.
10 . The switch device of claim 9 , wherein the first power transistor die is a first GaN die and the first bidirectional power switch has at most half a maximum rated source-to-source voltage as the switch device, wherein the second power transistor die is a second GaN die and the second bidirectional power switch has at most half the maximum rated source-to-source voltage as the switch device, and wherein the maximum rated source-to-source voltage of the switch device is 800V or higher.
11 . The switch device of claim 9 , wherein the first voltage clamp circuit further comprises a first pulldown device configured to prevent turn on of the first bidirectional clamp switch during dynamic switching of the switch device, and wherein the second voltage clamp circuit further comprises a second pulldown device configured to prevent turn on of the second bidirectional clamp switch during dynamic switching of the switch device.
12 . The switch device of claim 11 ,
wherein the first pulldown device comprises:
a first normally-on pulldown transistor having a drain electrically connected to the first gate of the first bidirectional clamp switch, a source electrically connected to the first source of the first bidirectional clamp switch, and a gate electrically connected to the first source of the first bidirectional power switch; and
a first voltage clamp between the source of the first normally-on pulldown transistor and the first source of the first bidirectional power switch,
wherein the second pulldown device comprises:
a second normally-on pulldown transistor having a drain electrically connected to the second gate of the second bidirectional clamp switch, a source electrically connected to the second source of the second bidirectional clamp switch, and a gate electrically connected to the second source of the second bidirectional power switch; and
a second voltage clamp between the source of the second normally-on pulldown transistor and the second source of the second bidirectional power switch.
13 . The switch device of claim 12 , wherein the first pulldown device further comprises a resistor electrically connected between the first gate and the first source of the first bidirectional clamp switch, and wherein the second pulldown device further comprises a resistor electrically connected between the second gate and the second source of the second bidirectional clamp switch.
14 . The switch device of claim 9 , further comprising:
a first overvoltage protection circuit configured to turn off the normally-on gate of the first bidirectional power switch when the normally-off gate of the second bidirectional power switch turns off, such that the normally-on gate of the first bidirectional power switch is passively controlled by the normally-off gate of the second bidirectional power switch; and
a second overvoltage protection circuit configured turn off the normally-on gate of the second bidirectional power switch when the normally-off gate of the first bidirectional power switch turns off, such that the normally-on gate of the second bidirectional power switch is passively controlled by the normally-off gate of the first bidirectional power switch.
15 . The switch device of claim 14 ,
wherein the first overvoltage protection circuit comprises one or more diodes in series between the normally-on gate and the second source of the first bidirectional power switch, an anode of a first one of the one or more diodes of the first overvoltage protection circuit is electrically connected to the second source of the first bidirectional power switch, and a cathode of a last one of the one or more diodes of the first overvoltage protection circuit is electrically connected to the normally-on gate of the first bidirectional power switch,
wherein the second overvoltage protection circuit comprises one or more diodes in series between the normally-on gate and the first source of the second bidirectional power switch, an anode of a first one of the one or more diodes of the second overvoltage protection circuit is electrically connected to the first source of the second bidirectional power switch, and a cathode of a last one of the one or more diodes of the second overvoltage protection circuit is electrically connected to the normally-on gate of the second bidirectional power switch.
16 . The switch device of claim 15 ,
wherein the first overvoltage protection circuit further comprises an additional diode having an anode electrically connected to the cathode of the last one of the one or more diodes of the first overvoltage protection circuit and a cathode electrically connected to the anode of the first one of the one or more diodes of the first overvoltage protection circuit,
wherein the second overvoltage protection circuit further comprises an additional diode having an anode electrically connected to the cathode of the last one of the one or more diodes of the second overvoltage protection circuit and a cathode electrically connected to the anode of the first one of the one or more diodes of the second overvoltage protection circuit.
17 . The switch device of claim 15 , further comprising:
a first capacitor in parallel with the one or more diodes of the first overvoltage protection circuit; and
a second capacitor in parallel with the one or more diodes of the second overvoltage protection circuit.
18 . The switch device of claim 9 , wherein the first gate and the second gate of the first bidirectional clamp switch are both normally-off gates, and wherein the first gate and the second gate of the second bidirectional clamp switch are both normally-off gates.
19 . The switch device of claim 9 , wherein the first gate of the first bidirectional clamp switch is a normally-off gate and the second gate of the first bidirectional clamp switch is a normally-on gate, and wherein the first gate of the second bidirectional clamp switch is a normally-on gate and the second gate of the second bidirectional clamp switch is a normally-off gate.
20 . A switch device, comprising:
a first normally off switch;
a second normally-off switch;
a first bidirectional power switch comprising a first source electrically connected to a drain of the first normally off switch, a second source, a first normally-on gate electrically connected to a source of the first normally off switch, and a second normally-on gate;
a second bidirectional power switch comprising a first source electrically connected to the second source of the first bidirectional power switch to form a cascode device, a second source electrically connected to a drain of the second normally off switch, a first normally-on gate, and a second normally-on gate electrically connected to a source of the second normally off switch;
a first capacitor electrically connected between the source of the first normally off switch and the first normally-on gate of the second bidirectional power switch;
a second capacitor electrically connected between the second normally-on gate of the first bidirectional power switch and the source of the second normally off switch;
a first voltage clamp circuit comprising a first bidirectional clamp switch having a first gate, a second gate, a first source electrically connected to the source of the first normally off switch, and a second source electrically connected to the first normally-on gate of the second bidirectional power switch, and one or more diodes between the first gate and the second source of the first bidirectional clamp switch; and
a second voltage clamp circuit comprising a second bidirectional clamp switch having a first gate, a second gate, a first source electrically connected to the second normally-on gate of the first bidirectional power switch, and a second source electrically connected to the source of the second normally off switch, and one or more diodes between the second gate and the first source of the second bidirectional clamp switch.
21 . The switch device of claim 20 , wherein the first voltage clamp circuit further comprises a first pulldown device configured to prevent turn on of the first bidirectional clamp switch during dynamic switching of the switch device, and wherein the second voltage clamp circuit further comprises a second pulldown device configured to prevent turn on of the second bidirectional clamp switch during dynamic switching of the switch device.
22 . The switch device of claim 21 ,
wherein the first pulldown device comprises:
a first normally-on pulldown transistor having a drain electrically connected to the first gate of the first bidirectional clamp switch, a source electrically connected to the first source of the first bidirectional clamp switch, and a gate electrically connected to the source of the first normally off switch; and
a first voltage clamp between the source of the first normally-on pulldown transistor and the source of the first normally off switch,
wherein the second pulldown device comprises:
a second normally-on pulldown transistor having a drain electrically connected to the second gate of the second bidirectional clamp switch, a source electrically connected to the second source of the second bidirectional clamp switch, and a gate electrically connected to the source of the second normally off switch; and
a second voltage clamp between the source of the second normally-on pulldown transistor and the source of the second normally off switch.
23 . The switch device of claim 22 , wherein the first pulldown device further comprises a resistor electrically connected between the first gate and the first source of the first bidirectional clamp switch, and wherein the second pulldown device further comprises a resistor electrically connected between the second gate and the second source of the second bidirectional clamp switch.