Granted Patent B2

US 12,593,598 · App. 17/965,798 · Granted Mar 31, 2026

Inventor: Mijung Han (Yongin-si, KR)

Assignee: Samsung Display Co., Ltd.

H10K59/873H10K59/124H10K71/00H10K59/1201

Abstract

Claims (40)

1 . A method for manufacturing a display apparatus, the method comprising:

forming an inorganic insulating layer on a substrate, the substrate comprising a display area and a peripheral area, the inorganic insulating layer comprising a first portion and a second portion, the first portion overlapping the display area, the second portion overlapping the peripheral area and being thicker than the first portion in a direction perpendicular to the substrate;

forming a first dam structure and a second dam structure that overlap the substrate, the first dam structure being located closer to the display area than the second portion, the second portion being located closer to the display area than the second dam structure wherein the first dam structure is at least partly formed on a first side of the thick second portion and the second dam structure being at least partly formed on a second side of the thick second portion; and

removing a part of the substrate overlapped by the second dam structure by emitting a laser beam to at least the second portion.

2 . The method of claim 1 , further comprising forming a first semiconductor layer that overlaps the substrate,

wherein the inorganic insulating layer covers the first semiconductor layer.

3 . The method of claim 1 , further comprising:

forming a first semiconductor layer that overlaps the substrate; and

forming a first gate layer that overlaps the first semiconductor layer,

wherein the inorganic insulating layer covers the first gate layer.

4 . The method of claim 1 , further comprising:

forming a first semiconductor layer that overlaps the substrate;

forming a first gate layer that overlaps the first semiconductor layer; and

forming a conductive layer that overlaps the first gate layer,

wherein the inorganic insulating layer covers the conductive layer.

5 . The method of claim 1 , further comprising:

forming a first semiconductor layer that overlaps the substrate;

forming a first gate layer that overlaps the first semiconductor layer;

forming a conductive layer that overlaps the first gate layer; and

forming a second semiconductor layer that overlaps the conductive layer,

wherein the inorganic insulating layer covers the second semiconductor layer.

6 . The method of claim 1 , further comprising:

forming a first semiconductor layer that overlaps the substrate;

forming a first gate layer that overlaps the first semiconductor layer;

forming a conductive layer that overlaps the first gate layer;

forming a second semiconductor layer that overlaps the conductive layer; and

forming a second gate layer that overlaps the second semiconductor layer,

wherein the inorganic insulating layer covers the second gate layer.

7 . The method of claim 1 , further comprising:

forming a first semiconductor layer that overlaps the substrate;

forming a first gate layer that overlaps the first semiconductor layer;

forming a conductive layer that overlaps the first gate layer;

forming a second semiconductor layer that overlaps the conductive layer; and

forming a second gate layer that overlaps the second semiconductor layer,

wherein the forming of the inorganic insulating layer comprises:

forming a first inorganic insulating layer covering the first semiconductor layer;

forming a second inorganic insulating layer covering the first gate layer;

forming a third inorganic insulating layer covering the conductive layer;

forming a fourth inorganic insulating layer covering the second semiconductor layer; and

forming a fifth inorganic insulating layer covering the second gate layer.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (15)