Plasma processing apparatus and inner chamber
A plasma processing apparatus includes a substrate support, an upper electrode, an inner chamber, and an exhaust device in an outer chamber. The substrate support is provided in the outer chamber. The upper electrode is provided above the substrate support. The inner chamber defines a substrate processing space on the substrate support. The exhaust device is connected to an exhaust port provided at a bottom portion of the outer chamber. The inner chamber includes a ceiling portion and a sidewall portion. The ceiling portion extends on the substrate processing space, provides a plurality of gas holes, and configures a shower head together with the upper electrode. The sidewall portion extends in a peripheral direction to surround the substrate processing space and provides a plurality of through-holes. The sidewall portion has an opening area that increases along a direction from a lower end toward an upper end of the sidewall portion.
1 . A plasma processing apparatus comprising:
an outer chamber;
a substrate support including a lower electrode and provided in the outer chamber;
an upper electrode provided above the substrate support;
an inner chamber that defines, together with the substrate support, a substrate processing space on the substrate support in the outer chamber; and
an exhaust device connected to a space provided in the outer chamber and outside the inner chamber via an exhaust port provided at a bottom portion of the outer chamber,
wherein the inner chamber is detachable from the upper electrode, and includes:
a ceiling portion extending on the substrate processing space, providing a plurality of gas holes, and configuring a shower head together with the upper electrode; and
a sidewall portion extending in a peripheral direction to surround the substrate processing space,
wherein the sidewall portion provides a plurality of through-holes that each has an opening area that increases continuously or increases intermittently with plateaus along a direction from a lower end of the sidewall portion toward an upper end thereof,
wherein the opening area of the through-holes is in general alignment along the direction from a lower end of the sidewall portion toward an upper end thereof,
wherein the plurality of through-holes includes a plurality of first through-holes provided in the upper portion and a plurality of second through holes provided in the lower portion, and
wherein a maximum width of each of the plurality of first through-holes is larger than a maximum width of each of the plurality of second through-holes.
2 . The plasma processing apparatus according to claim 1 ,
wherein the sidewall portion includes an upper portion and a lower portion, and
wherein an opening area of the upper portion is larger than an opening area of the lower portion.
3 . The plasma processing apparatus according to claim 2 ,
wherein the upper portion is a portion from a center between the upper end and the lower end to the upper end in the sidewall portion, and
wherein the lower portion is a portion from the center to the lower end in the sidewall portion.
4 . The plasma processing apparatus according to claim 2 ,
wherein the plurality of through-holes have a circular or oval shape.
5 . The plasma processing apparatus according to claim 4 ,
wherein a density of the plurality of through-holes in the upper portion is higher than a density of the plurality of through-holes in the lower portion.
6 . The plasma processing apparatus according to claim 1 ,
wherein the sidewall portion has a shape that expands between the upper end and the lower end.
7 . A plasma processing apparatus comprising:
an outer chamber;
a substrate support including a lower electrode and provided in the outer chamber;
an upper electrode provided above the substrate support;
an inner chamber that defines, together with the substrate support, a substrate processing space on the substrate support in the outer chamber; and
an exhaust device connected to a space provided in the outer chamber and outside the inner chamber via an exhaust port provided at a bottom portion of the outer chamber,
wherein the inner chamber is detachable from the upper electrode, and includes:
a ceiling portion extending on the substrate processing space, providing a plurality of gas holes, and configuring a shower head together with the upper electrode; and
a sidewall portion extending in a peripheral direction to surround the substrate processing space,
wherein the sidewall portion provides a plurality of through-holes that each has an opening area that increases continuously or increases intermittently with plateaus along a direction from a lower end of the sidewall portion toward an upper end thereof,
wherein the opening area of the through-holes is in general alignment along the direction from a lower end of the sidewall portion toward an upper end thereof, and
wherein each of the plurality of through-holes provided closer to the upper end has a maximum width that is larger than a maximum width of any through-hole provided closer to the lower end.
8 . The plasma processing apparatus according to claim 7 ,
wherein the plurality of through-holes have a circular or oval shape.
9 . The plasma processing apparatus according to claim 8 ,
wherein a density of the plurality of through-holes increases along a direction from the lower end toward the upper end.
10 . A plasma processing apparatus comprising:
an outer chamber;
a substrate support including a lower electrode and provided in the outer chamber;
an upper electrode provided above the substrate support;
an inner chamber that defines, together with the substrate support, a substrate processing space on the substrate support in the outer chamber; and
an exhaust device connected to a space provided in the outer chamber and outside the inner chamber via an exhaust port provided at a bottom portion of the outer chamber,
wherein the inner chamber is detachable from the upper electrode, and includes:
a ceiling portion extending on the substrate processing space, providing a plurality of gas holes, and configuring a shower head together with the upper electrode; and
a sidewall portion extending in a peripheral direction to surround the substrate processing space,
wherein the sidewall portion provides a plurality of through-holes that each has an opening area that increases continuously or increases intermittently with plateaus along a direction from a lower end of the sidewall portion toward an upper end thereof,
wherein the opening area of the through-holes is in general alignment along the direction from a lower end of the sidewall portion toward an upper end thereof, and
wherein each of the plurality of through-holes provided closer to the upper end has a maximum width that is larger than a maximum width of any through-hole provided closer to the lower end.
11 . The inner chamber according to claim 10 ,
wherein the sidewall portion includes an upper portion and a lower portion, and
wherein an opening area of the upper portion is larger than an opening area of the lower portion.
12 . The inner chamber according to claim 11 ,
wherein the upper portion is a portion from a center between the upper end and the lower end to the upper end in the sidewall portion, and
wherein the lower portion is a portion from the center to the lower end in the sidewall portion.
13 . The inner chamber according to claim 11 ,
wherein the plurality of through-holes have a circular or oval shape.
14 . The inner chamber according to claim 13 ,
wherein the plurality of through-holes includes a plurality of first through-holes provided in the upper portion and a plurality of second through holes provided in the lower portion, and
wherein a maximum width of each of the plurality of first through-holes is larger than a maximum width of each of the plurality of second through-holes.
15 . The inner chamber according to claim 13 ,
wherein a density of the plurality of through-holes in the upper portion is higher than a density of the plurality of through-holes in the lower portion.