Low temperature graphene growth
Exemplary methods of semiconductor processing include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor may be maintained greater than or about 2:1. The methods include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C.
1. A method of semiconductor processing, comprising:
delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein a flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor is maintained greater than or about 2:1; and
forming a layer of graphene on a substrate characterized by a diameter of 200 mm or 300 mm positioned within the processing region of the semiconductor processing chamber, wherein the substrate is maintained at a temperature below or about 600° C.
2. The method of semiconductor processing of claim 1 , wherein the processing region is maintained plasma free while forming the layer of graphene on the substrate.
3. The method of semiconductor processing of claim 1 , wherein the substrate comprises cobalt.
4. The method of semiconductor processing of claim 1 , wherein a flowrate of the carbon-containing precursor is maintained below or about 100 sccm.
5. The method of semiconductor processing of claim 1 , wherein a pressure within the processing region of the semiconductor processing chamber is maintained below or about 10 Torr.
6. The method of semiconductor processing of claim 1 , wherein the carbon-containing precursor comprises a hydrocarbon.
7. A method of semiconductor processing, comprising:
delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein a flowrate ratio of the carbon-containing precursor to the hydrogen-containing precursor is maintained greater than or about 1:1; and
forming a layer of graphene on a substrate characterized by a diameter of 200 mm or 300 mm positioned within the processing region of the semiconductor processing chamber, wherein the substrate is a metal substrate, and wherein the substrate is maintained at a temperature below or about 400° C.
8. The method of semiconductor processing of claim 7 , wherein the processing region is maintained plasma free while forming the layer of graphene on the substrate.
9. The method of semiconductor processing of claim 7 , wherein the substrate comprises cobalt.
10. The method of semiconductor processing of claim 7 , wherein a flowrate of the carbon-containing precursor is maintained greater than or about 1000 sccm.
11. The method of semiconductor processing of claim 7 , wherein a pressure within the processing region of the semiconductor processing chamber is maintained greater than or about 10 Torr.
12. A method of semiconductor processing, comprising:
delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber, wherein a flowrate ratio of the hydrogen-containing precursor to the carbon-containing precursor is maintained greater than or about 1:1, wherein a flowrate of the carbon-containing precursor is maintained greater than or about 500 sccm; and
forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber, wherein the processing region is maintained plasma free while forming the layer of graphene on the substrate.
13. The method of semiconductor processing of claim 12 , wherein the substrate is maintained at a temperature below or about 600° C.
14. The method of semiconductor processing of claim 12 , wherein the flowrate ratio of the carbon-containing precursor to the hydrogen-containing precursor is maintained greater than or about 2:1.
15. The method of semiconductor processing of claim 12 , wherein the substrate comprises a metal or dielectric material.
16. The method of semiconductor processing of claim 12 , wherein the carbon-containing precursor comprises a hydrocarbon.
17. The method of semiconductor processing of claim 12 , wherein the carbon-containing precursor comprises ethane, ethene, propane, propene, or acetylene.
18. The method of semiconductor processing of claim 12 , wherein a flowrate of the carbon-containing precursor is maintained greater than or about 1500 sccm.
19. The method of semiconductor processing of claim 12 , wherein the flowrate ratio of the carbon-containing precursor to the hydrogen-containing precursor is maintained less than or about 30:1.
20. The method of semiconductor processing of claim 19 , wherein a pressure within the processing region of the semiconductor processing chamber is maintained below or about 10 Torr.