Magnetoresistive random access memory
A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.
1. A semiconductor device, comprising:
a substrate having a magnetic tunneling junction (MTJ) region and a logic region;
a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and
a first metal interconnection on the MTJ, wherein a top view of the first metal interconnection comprises an ellipse overlapping the circle and the circle contacts the ellipse directly.
2. The semiconductor device of claim 1 , wherein the ellipse comprises:
a first curve on one side of the circle; and
a second curve on another side of the circle.
3. The semiconductor device of claim 1 , wherein the ellipse comprises a long axis extending along a first direction and a ratio of the long axis to a diameter of the circle is greater than 2 and less than 3.3.
4. The semiconductor device of claim 3 , wherein the ellipse comprises a short axis extending along a second direction and a ratio of the short axis to a diameter of the circle is greater than 0.7 and less than 1.3.
5. The semiconductor device of claim 4 , wherein the first direction is orthogonal to the second direction.
6. The semiconductor device of claim 1 , further comprising:
a second metal interconnection on the logic region, wherein a top view of the second metal interconnection comprises a quadrilateral.
7. The semiconductor device of claim 6 , wherein the first metal interconnection and the second metal interconnection are on a same level.