Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
1. A reflective mask blank comprising:
a substrate;
a multilayer reflective film on the substrate; and
a phase shift film on the multilayer reflective film,
wherein the phase shift film comprises a first layer and a second layer, the first layer comprises at least one selected from tantalum (Ta) and chromium (Cr), and the second layer comprises ruthenium (Ru) and at least one selected from chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re), and
a refractive index n of the second layer for EUV light is 0.860 to 0.950 and an extinction coefficient k of the second layer for EUV light is 0.008 to 0.095.
2. The reflective mask blank according to claim 1 , wherein a refractive index n of the second layer is 0.860 to 0.940 and an extinction coefficient k of the second layer is 0.008 to 0.057.
3. The reflective mask blank according to claim 2 , wherein a relative reflectance of the phase shift film is 10% to 40%.
4. The reflective mask blank according to claim 2 , wherein a phase difference of the phase shift film is 200 degrees to 230 degrees.
5. The reflective mask blank according to claim 1 , wherein a thickness of the first layer is 30 nm or less.
6. The reflective mask blank according to claim 1 , wherein a thickness of the second layer is 50 nm or less.
7. The reflective mask blank according to claim 1 , wherein a thickness of the phase shift film is 50 nm or less.
8. The reflective mask blank according to claim 1 , wherein the first layer is formed between the multilayer reflective film and the second layer.
9. The reflective mask blank according to claim 1 , further comprising a protective film between the multilayer reflective film and the phase shift film, wherein the protective film comprises ruthenium (Ru).
10. A reflective mask comprising:
a substrate;
a multilayer reflective film on the substrate; and
a phase shift film with a pattern on the multilayer reflective film, wherein
the phase shift film comprises a first layer and a second layer, the first layer comprises at least one selected from tantalum (Ta) and chromium (Cr), and the second layer comprises ruthenium (Ru) and at least one selected from chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re), and
a refractive index n of the second layer for EUV light is 0.860 to 0.950 and an extinction coefficient k of the second layer for EUV light is 0.008 to 0.095.
11. A method of manufacturing a semiconductor device, the method comprising the reflective mask according to claim 10 in an exposure apparatus comprising an exposure light source that emits EUV light, and transferring a transfer pattern to a resist film formed on a transferred substrate.
12. The reflective mask according to claim 10 , wherein a refractive index n of the second layer is 0.860 to 0.940 and an extinction coefficient k of the second layer is 0.008 to 0.057.
13. The reflective mask according to claim 12 , wherein a relative reflectance of the phase shift film is 10% to 40%.
14. The reflective mask according to claim 12 , wherein a phase difference of the phase shift film is 200 degrees to 230 degrees.
15. The reflective mask according to claim 10 , wherein a thickness of the first layer is 30 nm or less.
16. The reflective mask according to claim 10 , wherein a thickness of the second layer is 50 nm or less.
17. The reflective mask according to claim 10 , wherein a thickness of the phase shift film is 50 nm or less.
18. The reflective mask according to claim 10 , wherein the first layer is formed between the multilayer reflective film and the second layer.
19. The reflective mask according to claim 10 , further comprising a protective film between the multilayer reflective film and the phase shift film, wherein the protective film comprises ruthenium (Ru).