Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
Provided is a reflective mask blank. The reflective mask blank has a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate; the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, nitrogen, and oxygen or a multilayer structure including the ruthenium-containing layer; and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 2θ ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 2θ ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0.
1 . A reflective mask blank comprising a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate,
wherein the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, chromium, nitrogen, and oxygen, or a multilayer structure containing the ruthenium-containing layer,
wherein the ruthenium-containing layer is microcrystalline or amorphous, and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 20 ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 20 ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0, and
wherein the thin film is a phase shift film.
2 . The reflective mask blank according to claim 1 , wherein the ruthenium- containing layer has more nitrogen content than oxygen content.
3 . The reflective mask blank according to claim 2 , wherein an element having the largest content in the ruthenium-containing layer is ruthenium.
4 . The reflective mask blank according to claim 3 , wherein the thin film consists of a multilayer structure comprising an uppermost layer containing ruthenium on the ruthenium-containing layer.
5 . The reflective mask blank according to claim 4 , wherein an element having the largest content in the uppermost layer is oxygen.
6 . The reflective mask blank according to claim 5 comprising a protective film between the multilayer reflective film and the thin film.
7 . The reflective mask blank according to claim 1 , wherein an element having the largest content in the ruthenium-containing layer is ruthenium.
8 . The reflective mask blank according to claim 1 , wherein the thin film consists of a multilayer structure comprising an uppermost layer containing ruthenium on the ruthenium-containing layer.
9 . The reflective mask blank according to claim 8 , wherein an element having the largest content in the uppermost layer is oxygen.
10 . The reflective mask blank according to claim 1 comprising a protective film between the multilayer reflective film and the thin film.
11 . The reflective mask blank according to claim 1 , wherein the thin film is the multilayer structure containing the ruthenium-containing layer, wherein the multilayer structure comprises a lower layer and an uppermost layer, wherein the lower layer contains ruthenium, chromium, nitrogen, and oxygen and the uppermost layer contains ruthenium, chromium, and oxygen.
12 . A reflective mask comprising a multilayer reflective film and a thin film having a transfer pattern in this order on a main surface of a substrate,
wherein the thin film consists of a single layer structure consisting of a ruthenium-containing layer at least containing ruthenium, chromium, nitrogen, and oxygen, or a multilayer structure containing the ruthenium-containing layer,
wherein the ruthenium-containing layer is microcrystalline or amorphous, and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P1 is the maximum value of diffraction intensity within a diffraction angle 20 ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 20 ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0, and
wherein the thin film is a phase shift film.
13 . The reflective mask according to claim 12 , wherein the ruthenium-containing layer has more nitrogen content than oxygen content.
14 . The reflective mask according to claim 12 , wherein an element having the largest content in the ruthenium-containing layer is ruthenium.
15 . The reflective mask according to claim 12 , wherein the thin film consists of a multilayer structure comprising an uppermost layer containing ruthenium on the ruthenium-containing layer.
16 . The reflective mask according to claim 15 , wherein an element having the largest content in the uppermost layer is oxygen.
17 . The reflective mask according to claim 12 comprising a protective film between the multilayer reflective film and the thin film.
18 . A method of manufacturing a semiconductor device comprising the step of transferring a transfer pattern to a resist film on a semiconductor substrate by exposure using the reflective mask according to claim 12 .
19 . A reflective mask blank comprising a multilayer reflective film and a thin film for pattern formation in this order on a main surface of a substrate,
wherein the thin film consists of a multilayer structure containing a ruthenium-containing layer at least containing ruthenium, nitrogen, and oxygen,
wherein the ruthenium-containing layer is microcrystalline or amorphous, and when the ruthenium-containing layer is subjected to an analysis by an In-Plane measurement of an X-ray diffraction method to obtain an X-ray diffraction profile where, provided I_P 1 is the maximum value of diffraction intensity within a diffraction angle 20 ranging from 65 degrees to 75 degrees and I_avg is the average value of diffraction intensity within a diffraction angle 20 ranging from 55 degrees to 65 degrees, I_P1/I_avg is greater than 1.0 and less than 3.0, and
wherein the thin film is a phase shift film,
wherein the multilayer structure comprises a lower layer and an uppermost layer, wherein the lower layer contains ruthenium, nitrogen, and oxygen and the uppermost layer contains ruthenium, chromium, and oxygen.