Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
1. A reflective mask blank comprising:
a substrate;
a multilayer reflective film on the substrate; and
on the multilayer reflective film, a phase shift film for shifting a phase of EUV light,
wherein the phase shift film comprises ruthenium (Ru) and at least one selected from chromium (Cr), nickel (Ni), aluminum (Al), silicon (Si), vanadium (V), germanium (Ge), tin (Sn), tellurium (Te), hafnium (Hf), and tungsten (W).
2. The reflective mask blank according to claim 1 , wherein the crystal structure of the phase shift film is amorphous.
3. The reflective mask blank according to claim 1 , wherein the phase shift film comprises ruthenium (Ru) and at least one selected from chromium (Cr), and nickel (Ni).
4. The reflective mask blank according to claim 3 , wherein a composition ratio of the Ru and the Cr (Ru:Cr) is 15:1 to 1:20.
5. The reflective mask blank according to claim 3 , wherein a composition ratio of the Ru and the Ni (Ru:Ni) is 20:1 to 1:4.
6. The reflective mask blank according to claim 1 , further comprising a protective film between the multilayer reflective film and the phase shift film, wherein the protective film is made of a material containing silicon (Si) and oxygen (O).
7. A reflective mask comprising:
a substrate;
a multilayer reflective film on the substrate; and
a phase shift pattern on the multilayer reflective film, wherein
the phase shift pattern is obtained by patterning a phase shift film for shifting a phase of EUV light, and
the phase shift film comprises ruthenium (Ru) and at least one selected from chromium (Cr), nickel (Ni), aluminum (Al), silicon (Si), vanadium (V), germanium (Ge), tin (Sn), tellurium (Te), hafnium (Hf), and tungsten (W).
8. A method of manufacturing a semiconductor device, the method comprising placing the reflective mask according to claim 7 in an exposure apparatus comprising an exposure light source that emits EUV light, and transferring a transfer pattern to a resist film formed on a transferred substrate.
9. The reflective mask according to claim 7 , wherein the crystal structure of the phase shift film is amorphous.
10. The reflective mask according to claim 7 , wherein the phase shift film comprises metals containing ruthenium (Ru) and at least one selected from chromium (Cr), and nickel (Ni).
11. The reflective mask according to claim 10 , wherein a composition ratio of the Ru and the Cr (Ru:Cr) is 15:1 to 1:20.
12. The reflective mask according to claim 10 , wherein a composition ratio of the Ru and the Ni (Ru:Ni) is 20:1 to 1:4.
13. The reflective mask according to claim 7 , further comprising a protective film between the multilayer reflective film and the phase shift film, wherein the protective film is made of a material containing silicon (Si) and oxygen (O).
14. A method of manufacturing a reflective mask, the method comprising that a phase shift pattern is formed by patterning a phase shift film of a reflective mask blank by a dry etching gas comprising a chlorine-based gas and an oxygen gas, wherein,
the reflective mask blank comprises a multilayer reflective film and the phase shift film for shifting a phase of EUV light on a substrate in this order, and
the phase shift film comprises ruthenium (Ru) and at least one selected from chromium (Cr), nickel (Ni), aluminum (Al), silicon (Si), vanadium (V), germanium (Ge), tin (Sn), tellurium (Te), hafnium (Hf), and tungsten (W).
15. The method according to claim 14 , wherein the phase shift film comprises metals containing ruthenium (Ru) and at least one selected from chromium (Cr), and nickel (Ni).
16. The method according to claim 15 , wherein a composition ratio of the Ru and the Cr (Ru:Cr) is 15:1 to 1:20.
17. The method according to claim 15 , wherein a composition ratio of the Ru and the Ni (Ru:Ni) is 20:1 to 1:4.