Method for manufacturing a semiconductor-on- insulator substrate for radiofrequency applications
A method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applications, comprises: providing a P-doped semiconductor donor substrate; forming a sacrificial layer on the donor substrate; implanting atomic species through the sacrificial layer so as to form in the donor substrate an area of embrittlement defining a thin semiconductor layer that is to be transferred; removing the sacrificial layer from the donor substrate after the implantation; providing a supporting semiconductor substrate having an electrical resistivity greater than or equal to 500 Ω·cm; forming an electrically insulating layer on the supporting substrate; bonding the donor substrate on the supporting substrate, the thin semiconductor layer and the electrically insulating layer being at the interface of the bonding; detaching the donor substrate along the area of embrittlement so as to transfer the thin semiconductor layer from the donor substrate onto the supporting substrate.
1 . A method for fabricating a semiconductor-on-insulator substrate for radiofrequency applications, comprising:
providing a p-doped semiconductor donor substrate;
forming a sacrificial layer on the donor substrate;
implanting atomic species through the sacrificial layer, so as to form, in the donor substrate, a weakened area defining a thin semiconductor layer to be transferred;
removing the sacrificial layer from the donor substrate after the implantation;
providing a semiconductor carrier substrate having an electrical resistivity greater than or equal to 500 Ω·cm;
forming an electrically insulating layer on the semiconductor carrier substrate, the electrically insulating layer having a thickness between 10 and 150 nm;
bonding the donor substrate to the semiconductor carrier substrate without an electrically insulating layer on the donor substrate, the thin semiconductor layer and the electrically insulating layer being at a bonding interface;
detaching the donor substrate along the weakened area so as to transfer the thin semiconductor layer from the donor substrate to the semiconductor carrier substrate, the thin semiconductor layer having a thickness between 4 and 100 nm after being transferred; and
forming a radiofrequency component on or in the thin semiconductor layer.
2 . The method of claim 1 , wherein forming the sacrificial layer comprises oxidizing material of the donor substrate.
3 . The method of claim 2 , wherein removing the sacrificial layer comprises wet-etching the sacrificial layer.
4 . The method of claim 3 , wherein removing the sacrificial layer further comprises removing a surface portion of the thin semiconductor layer to be transferred from the donor substrate.
5 . The method of claim 4 , wherein the donor substrate is boron-doped.
6 . The method of claim 5 , wherein forming the electrically insulating layer comprises depositing an oxide on the semiconductor carrier substrate.
7 . The method of claim 5 , wherein forming the electrically insulating layer comprises oxidizing the semiconductor carrier substrate.
8 . The method of claim 1 , wherein removing the sacrificial layer comprises wet-etching the sacrificial layer.
9 . The method of claim 1 , wherein removing the sacrificial layer further comprises removing a surface portion of the thin semiconductor layer to be transferred from the donor substrate.
10 . The method of claim 1 , wherein the donor substrate is boron-doped.
11 . The method of claim 1 , wherein forming the electrically insulating layer comprises depositing an oxide on the semiconductor carrier substrate.
12 . The method of claim 1 , wherein forming the electrically insulating layer comprises oxidizing the semiconductor carrier substrate.
13 . The method of claim 1 , wherein forming the radiofrequency component comprises forming a radiofrequency component configured to operate in a frequency range between 30 and 300 GHz.