Sputtering target, manufacturing method therefor, and manufacturing method for magnetic recording medium
A sputtering target containing silicon nitride (Si 3 N 4 ) with reduced specific resistance of is provided. A sputtering target including Si 3 N 4 , SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less.
1. A sputtering target, comprising Si 3 N 4 , SiC, MgO and TiCN, wherein a specific resistance of the sputtering target is 10 mΩ·cm or less and a diffraction peak representing the crystal phase of TiCN at the incident angle (2θ) of 41.8° to 42.8° shows the maximum intensity among diffraction peaks present at an incident angle (2θ) of 20° to 80° in X-ray diffraction.
2. The sputtering target according to claim 1 , wherein assuming I TiCN is an intensity of the diffraction peak representing the crystal phase of TiCN present at the incident angle (2θ) of 41.8° to 42.8° in X-ray diffraction, and I SiN is an intensity of a diffraction peak representing a crystal phase of Si 3 N 4 present at an incident angle (2θ) of 26.5° to 27.5° in X-ray diffraction, 1.0≤I TiCN /I SiN is satisfied.
3. The sputtering target according to claim 1 , wherein assuming I TiCN is an intensity of the diffraction peak representing the crystal phase of TiCN present at the incident angle (2θ) of 41.8° to 42.8° in X-ray diffraction, and I SiC is an intensity of a diffraction peak representing a crystal phase of SiC present at an incident angle (2θ) of 37.6° to 38.6° in X-ray diffraction, 10.0≤I TiCN /I SiC is satisfied.
4. The sputtering target according to claim 2 , wherein assuming I TiCN is the intensity of the diffraction peak representing the crystal phase of TiCN present at the incident angle (2θ) of 41.8° to 42.8° in X-ray diffraction, and I SiC is an intensity of a diffraction peak representing a crystal phase of SiC present at an incident angle (2θ) of 37.6° to 38.6° in X-ray diffraction, 5.0≤I TiCN /I SiC is satisfied.
5. The sputtering target according to claim 1 , wherein an element concentration of Mg is 0.5 to 2.0% by mass.
6. The sputtering target according to claim 1 , wherein a relative density of the sputtering target is 90% or more.
7. The sputtering target according to claim 1 , wherein the specific resistance of the sputtering target is 2 mΩ·cm or less.
8. A method of manufacturing a magnetic recording medium, comprising performing sputtering using the sputtering target according to claim 1 .
9. The method of manufacturing a magnetic recording medium according to claim 8 , wherein the sputtering is DC sputtering.
10. A method of manufacturing the sputtering target according to claim 1 , comprising:
a step of mixing Si 3 N 4 powder, SiC powder, MgO powder, and TiN powder to prepare a mixed powder; and
a step of sintering the mixed powder by a pressure sintering method in a vacuum atmosphere or an inert atmosphere to prepare a sintered body.
11. The method for manufacturing a sputtering target according to claim 10 , wherein a median diameter (D50) of the mixed powder is 0.5 to 5 μm in a volume-based cumulative particle size distribution measured based on a laser diffraction/scattering method.
12. The method for manufacturing a sputtering target according to claim 10 , wherein a holding temperature when sintering the mixed powder is 1700° C. or higher.
13. The method for manufacturing a sputtering target according to claim 10 , wherein the mixed powder comprises 10 to 45 mol % of Si 3 N 4 powder, 10 to 40 mol % of SiC powder, 2 to 6 mol % of MgO powder, and 40 to 70 mol % of TiN powder.