IP Library › Granted Patent US 12,346,031
Granted Patent B2
US 12,346,031 · App. 18/018,065 · Granted Jul 1, 2025

Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method

Inventors: Fei Liu (Eindhoven, NL); Jin Lian (Eindhoven, NL); Zhuangxiong Huang (Eindhoven, NL); Laurentius Cornelius De Winter (Vessem, NL); Frank Staals (Eindhoven, NL)
Assignee: ASML Netherlands B.V.
G03F7/70641G01N21/4738G01N21/4788G03F7/706851
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Quick Facts
Patent No.
US 12,346,031
App. No.
18/018,065
Granted
Jul 1, 2025
Kind
B2
Abstract

Disclosed is a method for focus measurement of a lithographic process. The method comprises receiving a substrate on which a metrology pattern has been printed with a lithographic apparatus with an illumination pupil, illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern, and determining or monitoring a focus of the lithographic process based on the measured signal. Position of at least part of the metrology pattern is focus dependent. At least part of the metrology pattern has been printed by the lithography apparatus with an angular asymmetric illumination pupil.

Claims (35)

1. A method comprising:

printing, on a substrate, a metrology pattern comprising a first sub-target and a second sub-target with a lithographic apparatus using respective first and second angular asymmetric illumination pupils,

receiving the substrate at a metrology tool,

illuminating the metrology pattern with the metrology tool to measure a signal based on radiation scattered by the metrology pattern, and

determining or monitoring a focus of a lithographic process based on the measured signal;

wherein a position of at least part of the metrology pattern is focus dependent.

2. The method of claim 1 , wherein the metrology tool is a scatterometer or an angle-resolved scatterometer.

3. The method of claim 1 , wherein the metrology tool measures a dark-field imaging or dark-field imaging of diffraction orders diffracted from the metrology pattern.

4. The method of claim 1 , wherein the receiving comprises receiving the substrate on which the metrology pattern has been printed with extreme ultraviolet radiation.

5. The method of claim 1 , wherein:

the metrology pattern comprises a periodic structure and a periodic intermediate structure, and

the periodic structure and the periodic intermediate structure are different and form a staggered pattern.

6. The method of claim 1 , wherein the signal comprises information on at least one of an intensity and phase difference in opposing higher diffraction orders or in −1 and +1 diffraction orders.

7. The method of claim 1 , wherein:

the metrology pattern comprises a first part and a second part, and

positions of the first part and the second part have different shifts through focus.

8. The method of claim 1 , wherein

the first sub-target and the second sub-target are different in one or more of pitches, critical dimensions, duty cycles, space widths, or line widths.

9. The method of claim 1 , wherein:

the metrology pattern at least partly overlays with a periodic structure, and

the periodic structure is at a different layer on the substrate than a layer of the metrology pattern.

10. The method of claim 1 , wherein the metrology pattern comprises an angular symmetric structure.

11. A computer program comprising processor readable instructions that, when run on suitable processor-controlled apparatus, cause the processor-controlled apparatus to perform a method for focus measurement of a lithographic process, the method comprising:

receiving a substrate on which a metrology pattern comprising a first sub-target and a second sub-target has been printed with a lithographic apparatus using respective first and second angular asymmetric illumination pupils;

illuminating the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern; and

determining or monitoring a focus of the lithographic process based on the measured signal,

wherein a position of at least part of the metrology pattern is focus dependent.

12. A patterning device comprising:

a structure that, when printed onto a substrate, generates a metrology pattern suitable for focus measurement or monitoring of a lithographic process, the metrology pattern comprising a first sub-target and a second sub-target printed with a lithographic apparatus using respective first and second angular asymmetric illumination pupils and being configured to:

illuminate the metrology pattern with a metrology tool to measure a signal based on radiation scattered by the metrology pattern; and

determine or monitor a focus of the lithographic process based on the measured signal,

wherein a position of at least part of the metrology pattern is focus dependent.

13. A device comprising:

a metrology pattern comprising a first sub-target and a second sub-target printed with a lithographic apparatus using respective first and second angular asymmetric illumination pupils and configured to determine or monitor a focus of a lithographic process based on a signal measured by a metrology tool,

wherein a position of at least part of the metrology pattern is focus dependent.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 11, 2024
From: LIU, FEI; LIAN, JIN; HUANG, ZHUANGXIONG; DE WINTER, LAURENTIUS CORNELIUS; STAALS, FRANK
To: ASML NETHERLANDS B.V.
Reel/Frame 069558/0321 →
Priority Claims (1)
EP 20188032 · Jul 28, 2020 · regional
Continuity (1)
Related Publication 20230305407A1 · Sep 28, 2023
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