Wafer matching design method, wafer bonding structure and chip bonding structure
View Patent ↗A method of design for matching of wafers, a wafer bonding structure and a chip bonding structure includes: providing a first wafer including unit arrays that each include at least two first dies; providing a second wafer including second dies that each cover at least one of the unit arrays, and the second dies matched in terms of performance with the first dies in the unit arrays that it covers. The first and second wafers are provided with corresponding alignment marks. With this application, two or more wafers with corresponding dies differing considerably in terms of shape or area can be designed to match each other and become suitable to be bonded together. This enables effective area utilization of, and better matching in terms of area and performance between, the dies, greatly shortens the development time of new products and adds great diversity and freedom to product design.
1 . A method of design for matching of wafers, comprising:
providing a first wafer comprising at least one unit array, each unit array comprising at least two first dies;
providing a second wafer comprising at least one second die, each second die covering at least one of the unit array(s), each second die matched in terms of performance with at least one of the first dies in the unit array(s) that the second die covers,
wherein the first wafer is provided thereon with first alignment marks, the second wafer is provided thereon with second alignment marks, the first alignment marks correspond to the second alignment marks,
wherein the first wafer comprises a plurality of identical first exposure units, each of the first exposure units comprising at least one of the unit array(s), and wherein the second wafer comprises a plurality of identical second exposure units, each of the second exposure units comprising at least one of the second die(s),
wherein the first alignment marks include first overlay marks; the second alignment marks include second overlay marks, the first exposure units are sized differently from the second exposure units, wherein some of the second overlay marks in the plurality of second exposure units correspond to some of the first overlay marks in the plurality of first exposure unit periodically or at intervals.
2 . The method of design for matching of wafers of claim 1 , wherein: the first alignment marks further include first bonding marks; the second alignment marks further include second bonding marks; at least two of the first alignment marks are provided on the first wafer, and at least two of the second alignment marks are provided on the second wafer; and at least two of the second bonding marks correspond to two of the first bonding marks.
3 . The method of design for matching of wafers of claim 1 , wherein those of the second overlay marks in odd-numbered ones of the second exposure units correspond to those of the first overlay marks in first wafer regions covered by the odd-numbered second exposure units, and wherein the second exposure units are numbered sequentially based on their layout on the first and the second wafer.
4 . The method of design for matching of wafers of claim 1 , wherein each second die is bonded to the unit array(s) that the second die covers to make up a bonded unit.
5 . The method of design for matching of wafers of claim 4 , wherein in the bonded unit, the second die is electrically connected to the unit array(s) by bonding a metal layer on a bonding surface of the second die to a metal layer on a bonding surface of the unit array(s).
6 . The method of design for matching of wafers of claim 1 , wherein in each of the second exposure units, each of the second die(s) covers N of the first dies, where N is an integer greater than or equal to 2.
7 . The method of design for matching of wafers of claim 1 , wherein each second die is a control die and the first dies are memory dies.
8 . The method of design for matching of wafers of claim 1 , wherein each second die is provided with a test block.
9 . The method of design for matching of wafers of claim 1 , further comprising:
providing a third wafer comprising at least one third die, wherein the first wafer, the second wafer and the third wafer are bonded in the sequence set forth, each second die covering at least one of the third die(s), each third die is matched in terms of performance with at least one of the second die(s) and/or at least one of the first dies,
wherein the third wafer is provided thereon with third alignment marks corresponding to the second alignment marks.
10 . The method of design for matching of wafers of claim 1 , further comprising:
providing a third wafer comprising at least one third die, wherein the second wafer, the first wafer and the third wafer are bonded in the sequence set forth, each first die covering at least one of the third die(s), each of which is matched in terms of performance with at least one of the first dies and/or at least one of the second die(s),
wherein the third wafer is provided thereon with third alignment marks corresponding to the first alignment marks.
11 . A wafer bonding structure, comprising:
a first wafer comprising at least one unit array, each unit array comprising at least two first dies;
a second wafer comprising at least one second die, each second die covering at least one of the unit array(s), and each second die matched in terms of performance with at least one of the first dies in the unit array(s) that the second die covers,
wherein the first wafer is provided thereon with first alignment marks and the second wafer is provided thereon with second alignment marks, the first alignment marks corresponding to the second alignment marks, and
wherein the second wafer is bonded to the first wafer,
wherein the first wafer comprises a plurality of identical first exposure units, each of the first exposure units comprising at least one of the unit array(s), and wherein the second wafer comprises a plurality of identical second exposure units, each of the second exposure units comprising at least one of the second die(s),
wherein the first alignment marks include first overlay marks; the second alignment marks include second overlay marks, the first exposure units are sized differently from the second exposure units, wherein some of the second overlay marks in the plurality of second exposure units correspond to some of the first overlay marks in the plurality of first exposure unit periodically or at intervals.