REFLECTIVE MASK AND METHOD FOR PRODUCING REFLECTIVE MASK
The present invention provides a reflective mask capable of reducing the shadowing effect and having sufficient hydrogen radical resistance and a method for producing the reflective mask. A reflective mask ( 100 ) according to this embodiment includes: a substrate ( 11 ); a reflective film ( 12 ) reflecting an EUV light having a multi-layer film structure formed on the substrate ( 11 ); a protective film ( 13 ) formed on the reflective film ( 12 ) and protecting the reflective film ( 12 ); an absorption film pattern ( 14 a ) absorbing the EUV light formed on the protective film ( 13 ); and an oxide coating ( 15 ) formed on the absorption film pattern ( 14 a ), in which the absorption film pattern ( 14 a ) contains Sn and a metal element other than Sn and has a ratio of the atomic weight of Sn to the total atomic weight of the metal element other than Sn (Sn/Metal element other than Sn) within the range of 1 or more and less than 20 and the oxide coating ( 15 ) is resistant to hydrogen radicals and is formed on the surface and the side surfaces of the absorption film pattern ( 14 a ).
1 . A reflective mask comprising:
a substrate;
a reflective film configured to reflect an EUV light having a multi-layer film structure formed on the substrate;
a protective film formed on the reflective film, and configured to protect the reflective film;
an absorption film configured to absorb the EUV light formed on the protective film; and
an oxide coating formed on the absorption film; wherein the absorption film contains Sn and a metal element other than Sn and has a ratio of an atomic weight of the Sn to a total atomic weight of the metal element other than Sn (Sn/Metal element other than Sn) within a range of 1 or more and less than 20, and the oxide coating is resistant to a hydrogen radical and formed on a surface and side surfaces of the absorption film.
2 . A reflective mask comprising:
a substrate;
a reflective film configured to reflect an EUV light having a multi-layer film structure formed on the substrate;
a protective film formed on the reflective film, and configured to protect the reflective film;
an absorption film configured to absorb the EUV light formed on the protective film; and
an oxide coating formed on the absorption film; wherein the absorption film contains Sn in a proportion of 50 at % or more, and the oxide coating is resistant to a hydrogen radical and formed on a surface and side surfaces of the absorption film.
3 . The reflective mask according to claim 1 , wherein the oxide coating contains a compound containing at least one of oxides of Cr, Ta, Nb, Ti, Al, V, and Hf.
4 . The reflective mask according to claim 1 , wherein the oxide coating does not contain Sn or the oxide coating contains Sn, and a content of the Sn is smaller than a content of the compound containing at least one of oxides of Cr, Ta, Nb, Ti, Al, V, and Hf.
5 . The reflective mask according to claim 1 , wherein the absorption film contains a compound containing at least one of Cr, Ta, Nb, Ti, Al, V, and Hf as the metal element other than Sn.
6 . The reflective mask according to claim 1 , wherein the oxide coating has a film thickness of 1 nm or more.
7 . The reflective mask according to claim 1 , wherein the absorption film does not contain B, C, P, Si, and Ge, which are metalloid elements, or contains at least one of the metalloid elements, and has a ratio of a total atomic weight of the metalloid element to a total atomic weight of the metal element other than Sn (Metalloid element/Metal element other than Sn) within a range of 0 or more and 1 or less.
8 . The reflective mask according to claim 1 , wherein the absorption film contains the compound containing at least one of Cr, Ta, Nb, Ti, Al, V, and Hf in a proportion of more than 5 at %.
9 . The reflective mask according to claim 1 , wherein the absorption film is able to be etched with a fluorine-based gas or a chlorine-based gas.
10 . The reflective mask according to claim 1 , wherein a total film thickness of the absorption film and the oxide coating is 45 nm or less, and an OD value (Optical Density) is 1.0 or more.
11 . A method for producing a reflective mask, the reflective mask including:
a substrate;
a reflective film configured to reflect an EUV light having a multi-layer film structure formed on the substrate;
a protective film configured to protect the reflective film formed on the reflective film;
an absorption film configured to absorb the EUV light formed on the protective film; and
an oxide coating formed on the absorption film; wherein
the absorption film contains Sn and a metal element other than Sn and has a ratio of an atomic weight of the Sn to a total atomic weight of the metal element other than Sn (Sn/Metal element other than Sn) within a range of 1 or more and less than 20, and
the oxide coating is resistant to a hydrogen radical and formed on a surface and side surfaces of the absorption film.
12 . A method for producing a reflective mask, the reflective mask including:
a substrate;
a reflective film configured to reflect an EUV light having a multi-layer film structure formed on the substrate;
a protective film configured to protect the reflective film formed on the reflective film;
an absorption film configured to absorb the EUV light formed on the protective film; and
an oxide coating formed on the absorption film; wherein the absorption film contains Sn in a proportion of 50 at % or more, and the oxide coating is resistant to a hydrogen radical and formed on a surface and side surfaces of the absorption film.
13 . The method for producing a reflective mask according to claim 11 , wherein the oxide coating is formed by oxidizing the absorption film.
14 . The reflective mask according to claim 2 , wherein the oxide coating contains a compound containing at least one of oxides of Cr, Ta, Nb, Ti, Al, V, and Hf.
15 . The reflective mask according to claim 2 , wherein the oxide coating does not contain Sn or the oxide coating contains Sn, and a content of the Sn is smaller than a content of the compound containing at least one of oxides of Cr, Ta, Nb, Ti, Al, V, and Hf.
16 . The reflective mask according to claim 3 , wherein the oxide coating does not contain Sn or the oxide coating contains Sn, and a content of the Sn is smaller than a content of the compound containing at least one of oxides of Cr, Ta, Nb, Ti, Al, V, and Hf.
17 . The reflective mask according to claim 2 , wherein the absorption film contains a compound containing at least one of Cr, Ta, Nb, Ti, Al, V, and Hf as the metal element other than Sn.
18 . The reflective mask according to claim 3 , wherein the absorption film contains a compound containing at least one of Cr, Ta, Nb, Ti, Al, V, and Hf as the metal element other than Sn.
19 . The reflective mask according to claim 4 , wherein the absorption film contains a compound containing at least one of Cr, Ta, Nb, Ti, Al, V, and Hf as the metal element other than Sn.
20 . The reflective mask according to claim 2 , wherein the oxide coating has a film thickness of 1 nm or more.