Light emitting diode and display device comprising the same
A light emitting device includes a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer on the active layer, a first electrode on the first conductivity-type semiconductor layer, a second electrode on the second conductivity-type semiconductor layer, and a diffusion layer between the first electrode and the first conductivity-type semiconductor layer. The first electrode includes a plurality of layers, and at least one layer of the plurality of layers includes a magnetic material. The diffusion layer includes a magnetic material, and a thickness of the diffusion layer is 100 nm or less.
1 . A light emitting device comprising:
a first conductivity-type semiconductor layer;
an active layer on the first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer on the active layer;
a first electrode on the first conductivity-type semiconductor layer;
a second electrode on the second conductivity-type semiconductor layer; and
a diffusion layer between the first electrode and the first conductivity-type semiconductor layer,
wherein the first electrode comprises a plurality of layers,
wherein at least one layer of the plurality of layers comprises a magnetic material,
wherein the diffusion layer comprises the magnetic material, and
wherein a thickness of the diffusion layer is 40 nm to 100 nm.
2 . The light emitting device according to claim 1 , wherein the diffusion layer comprises an ohmic contact layer.
3 . The light emitting device according to claim 1 , wherein the magnetic material comprises Ni.
4 . The light emitting device according to claim 3 , wherein the first electrode comprises a first layer comprising the Ni, and a second layer disposed on the first layer and comprising Ti.
5 . The light emitting device according to claim 4 , wherein the first layer comprises an assembly inducing layer.
6 . The light emitting device according to claim 4 , wherein the first electrode comprises a third layer disposed below the first layer and containing the Ti and a fourth layer disposed below the third layer and comprising the Ni.
7 . The light emitting device according to claim 6 , wherein the fourth layer comprises a diffusion contributing layer.
8 . The light emitting device according to claim 6 , wherein a thickness of the first layer is greater than that of the fourth layer.
9 . The light emitting device according to claim 8 , wherein the thickness of the first layer is 150 nm to 200 nm, and the thickness of the fourth layer is 10 nm to 50 nm.
10 . The light emitting device according to claim 6 , wherein the first electrode comprises a fifth layer disposed below the fourth layer and comprising Au and a sixth layer disposed below the fifth layer and comprising AuGe.
11 . The light emitting device according to claim 10 , wherein the fifth layer comprises a diffusion suppressing layer.
12 . The light emitting device according to claim 10 , wherein the fifth layer comprises an electrode layer.
13 . The light emitting device according to claim 10 , wherein the fifth layer has a thickness of 5 nm to 10 nm.
14 . The light emitting device according to claim 1 , wherein the diffusion layer has an island shape.
15 . The light emitting device according to claim 1 , wherein a lower surface of the diffusion layer has a non-uniform surface.
16 . The light emitting device according to claim 1 , wherein the diffusion layer is formed inside the first conductivity-type semiconductor layer.
17 . The light emitting device according to claim 1 , wherein the second electrode is located in a central region of the light emitting device and the first electrode surrounds the second electrode.
18 . The light emitting device according to claim 1 , wherein the light emitting device has a circular shape.
19 . A display device comprising:
a substrate;
a first wire electrode and a second wire electrode on the substrate;
a partition layer having a plurality of assembly holes and on the first and second wire electrodes; and
a light emitting device disposed in each of the plurality of assembly holes,
wherein the light emitting device comprises:
a first conductivity-type semiconductor layer;
an active layer on the first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer on the active layer;
a first electrode on the first conductivity-type semiconductor layer;
a second electrode on the second conductivity-type semiconductor layer; and
a diffusion layer between the first electrode and the first conductivity-type semiconductor layer,
wherein the first electrode comprises a plurality of layers,
wherein at least one layer of the plurality of layers comprises a magnetic material,
wherein the diffusion layer comprises the magnetic material, and
wherein a thickness of the diffusion layer is 40 nm to 100 nm.