Method for manufacturing a semiconductor light emitting device
To provide a method for manufacturing a semiconductor light emitting device capable of providing sufficiently low operating voltage. The method for manufacturing a semiconductor light emitting device of the present invention includes: a semiconductor laminating step of laminating a plurality of nitride semiconductor layers of to form a semiconductor laminating structure; and an electrode forming step of forming n-side electrode and p-side electrodes on the n-type and p-type semiconductor layers. In the electrode forming step, after a first metallic layer including a Ni layer constituting a part of the n-side electrode is formed on a surface of a forming region of the n-side electrode, the first metallic layer is annealed in an atmosphere containing nitrogen and oxygen.
1. A method for manufacturing a semiconductor light emitting device having a p-side electrode and an n-side electrode, comprising:
a semiconductor laminating step of laminating a plurality of nitride semiconductor layers to form a semiconductor laminated structure; and
an electrode forming step of forming an electrode on at least one of the nitride semiconductor layers, the electrode forming step further including:
a first metallic layer forming step of sequentially forming only an Ni layer and an Au layer constituting first metallic layers on a surface of a forming region of the n-side electrode,
a first annealing step of annealing the first metallic layers in an atmosphere containing oxygen after the first metallic layer forming step,
a second metallic layer forming step of sequentially forming a layer of a first metal and an Au layer constituting second metallic layers on a surface of the first metallic layers after the first annealing step, and
a second annealing step of annealing the second metallic layers in a nitrogen atmosphere after the second metallic layer forming step.
2. The method for manufacturing a semiconductor light emitting device according to claim 1 , wherein, in the electrode forming step,
the first metallic layers are also sequentially formed on a surface of a forming region of the p-side electrode, simultaneously with forming the first metallic layers on the surface of the forming region of the n-side electrode, and
the first metallic layers are annealed in the atmosphere containing oxygen after the first metallic layers are formed on the forming region of the p-side electrode.
3. The method for manufacturing a semiconductor light emitting device according to claim 1 , wherein the first annealing step in the atmosphere containing oxygen is performed in an atmosphere at 500 to 800° C.
4. The method for manufacturing a semiconductor light emitting device according to claim 1 , wherein the first annealing step is performed in an atmosphere containing nitrogen and oxygen.