Granted Patent B2

US 12,709,819 · App. 18/037,672 · Granted Aug 18, 2026

Inventors: Kagan Ceran (Saint Baldoph, FR); Didier Marsan (Saint Baldoph, FR); Alexander Syrkin (Munich, DE); Omar Benamara (Lyons, FR); Moaine Jebara (Nantes, FR)

Assignee: Zadient Technologies SAS

C30B23/066C30B23/005C30B29/36

Abstract

Claims (111)

1 . A furnace apparatus for growing SiC crystals,

comprising

a furnace unit,

wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface,

at least one crucible unit

wherein the crucible unit is arranged inside the furnace housing,

wherein the crucible unit comprises a crucible housing,

wherein the housing has an outer surface and an inner surface,

wherein the inner surface at least partially defines a crucible volume,

wherein a receiving space for receiving a solid SiC source material is arranged or formed inside the crucible volume,

wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume,

wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume,

at least one heating unit for heating the source material,

wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit,

characterized in that

a crucible gas flow unit is provided for causing gas flow along a gas flow path inside the crucible volume, wherein the gas flow unit comprises a crucible gas inlet tube for conducting gas into the crucible volume and a crucible gas outlet tube for removing gas conducted into the crucible volume via the crucible gas inlet tube from the crucible volume,

a filter unit is arranged inside the crucible volume between the crucible gas inlet tube and the crucible gas outlet tube for capturing at least Si 2 C sublimation vapor, SiC 2 sublimation vapor and Si sublimation vapor,

the gas flow path extends through the filter unit,

the filter unit is arranged between a crucible lower housing and a crucible upper housing, wherein the filter body forms a filter outer surface, wherein the filter outer surface connects the crucible lower housing and the crucible upper housing, wherein the filter outer surface forms a portion of the outer surface of crucible housing, and

the filter outer surface comprises a filter outer surface covering element, wherein the filter outer surface covering element is a sealing element, wherein the sealing element is a filter coating, wherein the filter coating is generated at the filter surface or attached to the filter surface or forms the filter surface.

2 . A furnace apparatus for growing SiC crystals,

comprising

a furnace unit,

wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface,

at least one crucible unit

wherein the crucible unit is arranged inside the furnace housing,

wherein the crucible unit comprises a crucible housing,

wherein the housing has an outer surface and an inner surface,

wherein the inner surface at least partially defines a crucible volume,

wherein a receiving space for receiving a solid SiC source material is arranged or formed inside the crucible volume,

wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume,

wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume,

at least one heating unit for heating the source material,

wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit,

characterized in that

a crucible gas flow unit is provided for causing gas flow along a gas flow path inside the crucible volume, wherein the gas flow unit comprises a crucible gas inlet tube for conducting gas into the crucible volume and a crucible gas outlet tube for removing gas conducted into the crucible volume via the crucible gas inlet tube from the crucible volume,

a filter unit is arranged inside the crucible volume between the crucible gas inlet tube and the crucible gas outlet tube for capturing at least Si 2 C sublimation vapor, SiC 2 sublimation vapor and Si sublimation vapor,

the gas flow path extends through the filter unit,

the filter unit is arranged between a crucible lower housing and a crucible upper housing, wherein the filter body forms a filter outer surface, wherein the filter outer surface connects the crucible lower housing and the crucible upper housing, wherein the filter outer surface forms a portion of the outer surface of crucible housing, and

the filter body forms a filter inner surface, wherein the filter inner surface forms a filter through hole.

3 . The furnace apparatus according to claim 1 ,

characterized in that

the filter unit comprises a filter body,

wherein the filter body comprises a filter input surface for inputting sublimated vapor comprising Si 2 C vapor, SiC 2 vapor, Si vapor and carrier and/or doping gases into the filter body and an output surface for outputting filtered carrier and doping gases,

wherein a filter element is arranged between the filter input surface and the output surface,

wherein the filter element forms a trapping section for adsorbing and condensing Si vapor.

4 . The furnace apparatus according to claim 1 ,

characterized in that

the filter element forms a filter-unit-gas-flow-path from the filter input surface to the output surface, wherein the filter gas flow path is part of the gas flow path between the crucible gas inlet tube and the crucible gas outlet tube, wherein the filter element has a height S1 and wherein the filter-unit-gas-flow-path through the filter element has a length S2, wherein S2 is at least 2 times longer compared to S1.

5 . The furnace apparatus according to claim 1 ,

characterized in that

the filter body forms a filter inner surface, wherein the filter inner surface forms a filter through hole.

6 . The furnace apparatus according to claim 5 ,

characterized in that

the filter inner surface comprises a further filter inner surface covering element, wherein the further filter inner surface covering element is a sealing element, wherein the sealing element is a filter coating, wherein the filter coating is generated at the filter surface or attached to the filter surface or forms the filter surface.

7 . The furnace apparatus according to claim 5 ,

characterized in that

the filter through hole is arranged above the seed holder unit, wherein a through-hole-center-axis of the filter through hole is arranged parallel to a seed-holder-unit-axis.

8 . The furnace apparatus according to claim 5 ,

characterized in that

the through-hole-center-axis is arranged in a distance of less than 50% of the diameter or average diameter or largest diameter of the seed holder unit to the seed-holder-unit-center-axis and the filter through hole has a diameter or average diameter or largest diameter of more than 20% of the diameter or average diameter or largest diameter of the seed holder unit.

9 . A furnace apparatus for growing SiC crystals,

comprising

a furnace unit,

wherein the furnace unit comprises a furnace housing with an outer surface and an inner surface,

at least one crucible unit

wherein the crucible unit is arranged inside the furnace housing,

wherein the crucible unit comprises a crucible housing,

wherein the housing has an outer surface and an inner surface,

wherein the inner surface at least partially defines a crucible volume,

wherein a receiving space for receiving a solid SiC source material is arranged or formed inside the crucible volume,

wherein a seed holder unit for holding a defined seed wafer is arranged inside the crucible volume,

wherein the furnace housing inner wall and the crucible housing outer wall define a furnace volume,

at least one heating unit for heating the source material,

wherein the receiving space for receiving the source material is at least in parts arranged below the seed holder unit,

characterized in that

a crucible gas flow unit is provided for causing gas flow along a gas flow path inside the crucible volume, wherein the gas flow unit comprises a crucible gas inlet tube for conducting gas into the crucible volume and a crucible gas outlet tube for removing gas conducted into the crucible volume via the crucible gas inlet tube from the crucible volume,

a filter unit is arranged inside the crucible volume between the crucible gas inlet tube and the crucible gas outlet tube for capturing at least Si 2 C sublimation vapor, SiC 2 sublimation vapor and Si sublimation vapor,

the gas flow path extends through the filter unit,

the receiving space is located between the crucible gas inlet tube and the seed holder unit for conducting gas flow around the receiving space and/or through the receiving space,

a source material holding plate is provided, wherein the source material holding plate comprises an upper surface forming a bottom section of the receiving space and a lower surface forming a source-material-holding-plate-gas-flow-path-boundary-section,

the source-material-holding-plate comprises multiple through holes, wherein the multiple through holes extend from the upper surface of the source-material-holding-plate through a main body of the source-material-holding-plate to the lower surface of source-material-holding-plate, wherein at least the majority of the multiple through holes has a diameter of less than 12 mm.

10 . The furnace apparatus according to claim 9 ,

characterized in that

the number of through holes through the main body of the source-material-holding-plate depends on the surface size of the upper surface of the source-material-holding-plate, wherein at least one though hole is provided per 10 cm 2 surface size of the upper surface.

11 . The furnace apparatus according to claim 10 ,

characterized in that

the number of through holes per 10 cm 2 is higher in a radially outer section of the source-material-holding-plate compared to a radially inner section of the source-material-holding-plate, wherein the radially inner section extends up to 20% or 30% or 40% or 50% of the radial extension of the source-material-holding-plate, wherein the radially outer section of the source-material-holding-plate extends between the radially inner section and the radial end of the source-material-holding-plate.

12 . The furnace apparatus according to claim 1 ,

characterized in that

the lower surface of the source-material-holding-plate forms together with a bottom wall section of the crucible housing a gas-guide-gap or gas-guide-channel for guiding gas from the crucible gas inlet tube to the receiving space or around the receiving space.

13 . The furnace apparatus according to claim 1 ,

characterized in that

a pressure unit for setting up a crucible volume pressure inside the crucible volume is provided,

wherein the pressure unit is configured to cause the crucible volume pressure to be in a range between 2666.45 Pa and 50000.00 Pa.

14 . A method for producing SiC material,

comprising the steps:

Providing at least one furnace apparatus according to claim 1 ,

Arranging source material in a receiving space within the crucible housing,

Heating the source material, and

Feeding a carrier gas into the crucible housing.

15 . The method according to claim 14 , further comprising

removing the carrier gas from the crucible housing via a crucible gas outlet tube.

16 . The method according to claim 14 ,

characterized in that

at least 50% of the source material is provided as fragments having a volume of more than 0.5 cm 3 .

17 . The method according to claim 14 ,

characterized in that

the source material is solid SiC material.

18 . The method according to claim 14 , further comprising

generating a crucible volume pressure inside the crucible volume above 2666.45 Pa.

Assignments (1)

Priority Claims (2)

Continuity (1)

References Cited (155)