IP Library › Granted Patent US 11,929,265
Granted Patent B2
US 11,929,265 · App. 18/047,590 · Granted Mar 12, 2024

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

Inventor: Yusuke Yadani (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H01L21/67092B23K20/10B23K20/106H01L21/607
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Quick Facts
Patent No.
US 11,929,265
App. No.
18/047,590
Granted
Mar 12, 2024
Kind
B2
Abstract

A semiconductor manufacturing apparatus includes a tool performing joining by ultrasonic vibration while applying a load to a metal terminal. The tool includes a plurality of protrusions arranged along the X-axis direction and the Y-axis direction on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal. The intervals between the plurality of protrusions are equal in the X direction of the pressing surface, and are larger on the inner peripheral side than on the outer peripheral side in the Y-axis direction of the pressing surface.

Claims (24)

1. A semiconductor manufacturing apparatus comprising

a tool performing joining by ultrasonic vibration while applying a load to a metal terminal, wherein

the tool includes a plurality of protrusions arranged on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal along a first direction and a second direction that is a direction intersecting the first direction,

intervals between the plurality of protrusions are equal in the first direction of the pressing surface, and

along a row of the plurality of protrusions in the second direction, a plurality of intervals between the plurality of protrusions on an inner peripheral side in the second direction are greater than an interval between the plurality of protrusions on an outer peripheral side of the pressing surface in the second direction.

2. A semiconductor manufacturing apparatus comprising

a tool performing joining by ultrasonic vibration while applying a load to a metal terminal, wherein

the tool includes a plurality of protrusions arranged on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal along a first direction and a second direction that is a direction intersecting the first direction,

intervals between the plurality of protrusions are equal in the first direction of the pressing surface, and are larger on an inner peripheral side than on an outer peripheral side of the pressing surface in the second direction, and

widths of the plurality of protrusions in the second direction are larger on the outer peripheral side than on the inner peripheral side of the pressing surface in the second direction.

3. The semiconductor manufacturing apparatus according to claim 1 , wherein a protruding portion protruding toward the metal terminal side is provided across one end portion of the pressing surface in the first direction.

4. The semiconductor manufacturing apparatus according to claim 1 , wherein widths of the plurality of protrusions are equal.

5. The semiconductor manufacturing apparatus according to claim 1 , wherein the plurality of protrusions are directly adjacent to each other along the first direction of the pressing surface.

6. A semiconductor manufacturing apparatus comprising

a tool performing joining by ultrasonic vibration while applying a load to a metal terminal, wherein

the tool includes a plurality of protrusions arranged on a pressing surface in a rectangular shape at a tip end portion facing the metal terminal along a first direction and a second direction that is a direction intersecting the first direction,

intervals between the plurality of protrusions are equal in the first direction of the pressing surface, and are larger on an inner peripheral side than on an outer peripheral side of the pressing surface in the second direction, and

among the plurality of protrusions provided at both end portions in the second direction of the pressing surface, a groove on an outer peripheral side of the protrusions provided at both end portions in the first direction of the pressing surface is deeper than a groove between the protrusions provided at a portion other than the both end portions in the first direction of the pressing surface.

7. The semiconductor manufacturing apparatus according to claim 1 , wherein along each row of the plurality of protrusions in the second direction, the plurality of intervals between the plurality of protrusions on the inner peripheral side in the second direction are greater than the plurality of intervals between the plurality of protrusions on the outer peripheral side of the pressing surface in the second direction.

8. The semiconductor manufacturing apparatus according to claim 1 , wherein intervals between each of the plurality of protrusions are equal in the first direction of the pressing surface.

9. The semiconductor manufacturing apparatus according to claim 6 , wherein

among the plurality of protrusions provided at both end portions in the second direction of the pressing surface, intervals between the protrusions are equal in the first direction of the pressing surface and are first intervals, and

among the plurality of protrusions provided between the plurality of protrusions provided at both end portions in the second direction of the pressing surface, intervals between the protrusions are equal in the first direction of the pressing surface and are second intervals.

10. The semiconductor manufacturing apparatus according to claim 9 , wherein the first intervals are greater than the second intervals.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2022
From: YADANI, YUSUKE
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 061460/0823 →
Priority Claims (1)
JP 2021-206758 · Dec 21, 2021 · national
Continuity (1)
Related Publication 20230197473A1 · Jun 22, 2023
Cited By (1)
US 12,569,929