Erosion resistant coatings applied by variable bias cathodic arc deposition
A cathodic arc coating system includes alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN) disposed on a substrate. A cathodic arc process includes a sub-hertz variable bias forming the alternating layers of alternating layers of at least one of titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) disposed on a substrate; and alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN) disposed on a substrate.
1 . A cathodic arc coating system, the cathodic arc coating system comprising a coating disposed on a substrate, the coating including alternating layers of at least one of:
titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN); and
titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN),
wherein the alternating layers are disposed on the substrate by a sub-hertz variable bias cathodic arc.
2 . The cathodic arc coating system according to claim 1 , wherein the alternating layers have a thickness in a range from about 1 nanometer (nm) to about 100 nm.
3 . The cathodic arc coating system according to claim 1 , wherein the alternating layers have a thickness in a range from about 5 nanometers (nm) to about 100 nm.
4 . The cathodic arc coating system according to claim 1 , wherein the alternating layers have a thickness of about 10 nanometers (nm).
5 . The cathodic arc coating system according to claim 1 , wherein the sub-hertz variable bias varies with time as a sinusoidal wave, the sinusoidal wave having a frequency in a range between about 0.1 hertz (Hz) and about 1 Hz.
6 . The cathodic arc coating system according to claim 1 , wherein the sub-hertz variable bias varies with time in a periodic manner, with one or more periodic features being expressed with a frequency in a range between 0.1 hertz (Hz) and about 1 Hz.
7 . The cathodic arc coating system according to claim 1 , wherein the sub-hertz variable bias includes a modified variable bias waveform with a modified bias to control the incorporation of at least one of: vanadium (V), silicon (Si), and Cr.
8 . The cathodic arc coating system according to claim 7 , further comprising a chamber and a consumable cathode, wherein the substrate is disposed in the chamber and the consumable cathode, and the chamber functions as an anode;
wherein the sub-hertz variable bias creates a potential to attract highly energized metallic ions from the consumable cathode, the highly energized metallic ions are ejected from the consumable cathode, and the highly energized metallic ions are accelerated to the substrate.
9 . The cathodic arc coating system according to claim 8 , wherein the substrate is provided with a periodically varying negative charge.
10 . The cathodic arc coating system according to claim 8 , wherein the chamber includes nitrogen (N) gas therein.
11 . The cathodic arc coating system according to claim 8 , wherein the consumable cathode includes titanium (Ti), vanadium (V), silicon (Si), and sometimes chromium (Cr).
12 . A sub-hertz variable bias cathodic arc process, the process comprising:
depositing a coating on a substrate with alternating layers of at least one of:
titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN) on the substrate; and
titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium chromium nitride (TiSiVCrN) on the substrate.
13 . The sub-hertz variable bias cathodic arc process according to claim 12 , wherein the alternating layers have a thickness in a range from about 1 nanometer (nm) to about 100 nm.
14 . The sub-hertz variable bias cathodic arc process according to claim 12 , wherein depositing the alternating layers includes depositing by a sub-hertz variable bias cathodic arc.
15 . The sub-hertz variable bias cathodic arc process according to claim 14 , wherein the sub-hertz variable bias varies with time as an approximate sinusoidal wave, the approximate sinusoidal wave having a frequency in a range between 0.1 hertz (Hz) and about 1 Hz.
16 . The sub-hertz variable bias cathodic arc process according to claim 12 , wherein the sub-hertz variable bias includes a modified variable bias waveform with a reduced maximum voltage bias to incorporate vanadium (V) and silicon (Si) into the alternating layers of at least one of:
titanium vanadium nitride (TiVN) and titanium silicon vanadium nitride (TiSiVN); and
alternating layers of titanium vanadium chromium nitride (TiVCrN) and titanium silicon vanadium nitride (TiSiVCrN).
17 . The sub-hertz variable bias cathodic arc process according to claim 12 , wherein the cathodic arc process includes:
disposing a consumable cathode in a chamber;
disposing the substrate in communication with the chamber, wherein the chamber functions as an anode;
disposing a reactant gas in the chamber;
applying a sub-hertz variable bias to the substrate,
generating an electrical arc on the cathode, wherein the arc traverses a face of the cathode;
creating highly energized metallic ions by the arc interacting with the consumable cathode;
ejecting highly energized metallic ions from the face of the consumable cathode; and
accelerating the highly energized metallic ions to the substrate.
18 . The sub-hertz variable bias cathodic arc process according to claim 17 , wherein applying the sub-hertz variable bias includes:
applying the sub-hertz variable bias at a first voltage where the ejected highly energized metallic ions from the consumable cathode pass through the reactant gas at a first velocity and partially react with the reactant gas, wherein the reactant gas includes at least one of nitrogen (N 2 ) and oxygen (O 2 ), and the ejected highly energized metallic ions are deposited on the substrate; and
applying the sub-hertz variable bias at a second voltage where the ejected highly energized metallic ions pass through the reactant gas at a second velocity in the chamber, wherein at the second speed, the ejected highly energized metallic ions enable a chemical reaction with the at least one of nitrogen and oxygen to form a reaction product, and the reaction product is deposited; and
applying the sub-hertz variable bias in a manner that systematically controls deposition efficiency of individual constituent elements from the consumable cathode onto the substrate such that the prevalence of one or more elements in a resulting microstructure of the coated substrate varies periodically as a function of distance from the original substrate surface, in accordance to the applied variable bias, whether the constituent elements are ultimately incorporated in the microstructure of the coated substrate as part of a reaction product as described above or partially reacted metallic ions as described above.
19 . The sub-hertz variable bias cathodic arc process according to claim 18 , wherein t the consumable cathode includes at least one of:
titanium (Ti), vanadium (V), silicon (Si); and
titanium (Ti), vanadium (V), silicon (Si), and chromium (Cr).
20 . The sub-hertz variable bias cathodic arc process according to claim 14 , wherein the sub-hertz variable bias varies with time in a periodic manner, with one or more periodic features being expressed with a frequency in a range between 0.1 hertz (Hz) and about 1 Hz.