Air gap in inner spacers and methods of fabricating the same in field-effect transistors
A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate stack having a top portion disposed over the stack of semiconductor layers and a bottom portion interleaved with the stack of semiconductor layers, an inner spacer disposed on sidewalls of the bottom portion of the metal gate stack, an air gap enclosed in the inner spacer, and an epitaxial source/drain (S/D) feature disposed over the inner spacer and adjacent to the metal gate stack.
1. A method, comprising:
forming a dummy gate stack over a fin;
forming an S/D recess in the fin;
depositing a first spacer layer within the S/D recess, wherein the depositing forms a plurality of air gaps in the first spacer layer, and wherein each of the plurality of air gaps is surrounded by the first spacer layer;
before forming an epitaxial source/drain (S/D) feature, removing portions of the first spacer layer adjacent the fin while maintaining the plurality of air gaps surrounded by the first spacer layer; and
forming the epitaxial S/D feature in the S/D recess and laterally adjacent to the first spacer layer having the plurality of air gaps.
2. The method of claim 1 ,
wherein the removing portions of the first spacer layer includes exposing a surface of a channel region of the fin.
3. The method of claim 1 , further comprising:
annealing the first spacer layer before removing the portions of the first spacer layer.
4. The method of claim 1 , wherein depositing the first spacer layer includes implementing an atomic layer deposition (ALD) process in a high-pulse mode.
5. The method of claim 1 , wherein the depositing the first spacer layer is depositing a dielectric material including silicon.
6. The method of claim 1 , wherein the first spacer layer extends between each of the plurality of air gaps and the epitaxial S/D feature.
7. The method of claim 1 , further comprising:
prior to depositing the first spacer layer, etching non-channel layers of the fin to provide an opening within the S/D recess, wherein the depositing the first spacer layer forms the first spacer layer within the opening.
8. A method of semiconductor device fabrication, the method comprising:
forming a fin protruding from a semiconductor substrate, wherein the fin includes a multi-layer stack (ML) of alternating channel layers and non-channel layers;
forming a source/drain (S/D) recess in the ML;
recessing a portion of each non-channel layer to form a trench extending in the S/D recess;
depositing an inner spacer layer in the trench by an atomic layer deposition (ALD) process in a high-pulse mode, wherein the depositing forms an air gap in the inner spacer layer;
and forming an epitaxial source/drain (S/D) feature over the inner spacer layer in the S/D recess.
9. The method of claim 8 , further comprising:
after forming the epitaxial S/D feature, removing the non-channel layers to form openings between the channel layers.
10. The method of claim 9 , further comprising:
forming a gate structure in the openings between channel layers.
11. The method of claim 8 , wherein the ALD process provides a higher rate lateral deposition rate of the inner spacer layer than vertical deposition rate of the inner spacer layer.
12. The method of claim 8 , wherein the forming the air gap in the inner spacer layer forms the air gap completely surrounded by the inner spacer layer.
13. The method of claim 8 , wherein the forming the air gap in the inner spacer layer forms the air gap having a portion bound by the inner spacer layer and a portion bound by the epitaxial S/D feature.
14. A semiconductor structure, comprising:
a gate stack disposed between at least two semiconductor layers;
a source/drain (S/D) feature disposed adjacent to the gate stack; and
an inner spacer between the S/D feature and the gate stack, wherein the inner spacer includes a first dielectric layer and an air gap disposed within the first dielectric layer, wherein a thickness of the air gap in a vertical direction varies including having a first thickness measured at a first end of the air gap and a second thickness measured at a second end of the air gap, wherein the second end of the air gap is nearer the S/D feature than the first end, and wherein the second thickness is less than the first thickness.
15. The semiconductor structure of claim 14 , wherein the thickness of the air gap further includes a third thickness measured between the first thickness and the second thickness, wherein the third thickness is different than the first thickness and the second thickness.
16. The semiconductor structure of claim 15 , wherein the third thickness is greater than the first thickness and the second thickness.
17. The semiconductor structure of claim 14 , wherein the air gap has curvilinear sidewalls from the first end to the second end in a cross-sectional view.
18. The semiconductor structure of claim 14 , wherein the gate stack is a high-k metal gate structure.
19. The semiconductor structure of claim 14 , wherein the air gap is completely surrounded by the inner spacer.
20. The semiconductor structure of claim 14 , wherein the air gap has a triangular cross-sectional shape.