Semiconductor package with wettable flank and related methods
Implementations of the semiconductor package may include a first sidewall opposite a second sidewall, and a third sidewall opposite a fourth sidewall. Implementations of the semiconductor package may include a first lead and a second lead extending from the first sidewall and a first half-etched tie bar directly coupled to the first lead. An end of the first half-etched tie bar may be exposed on the third sidewall of the semiconductor package. Implementations of the semiconductor package may also include a second half-etched tie bar directly coupled to the second lead. An end of the second half-etched tie bar may be exposed on the fourth sidewall. An end of the first lead and an end of the second lead may each be electroplated. The first die flag and the second die flag may be electrically isolated from the first lead and the second lead.
1. A method of forming a semiconductor package comprising:
providing a lead frame encompassed by an outer frame, the lead frame comprising a plurality of leads, one or more die flags, and a plurality of tie bars directly coupled between the plurality of leads and the outer frame;
half-etching the plurality of tie bars;
at least partially encapsulating the lead frame in a mold compound;
exposing an end of each lead of the plurality of leads through removing a first side of the outer frame from the lead frame;
electroplating an end of each lead of the plurality of leads through the plurality of tie bars;
singulating the lead frame from the outer frame.
2. The method of forming the semiconductor package of claim 1 , wherein the plurality of tie bars comprise four tie bars.
3. The method of claim 1 , wherein the plurality of tie bars comprise two tie bars.
4. The method of claim 1 , further comprising half-etching a second plurality of tie bars directly coupled to and between a second plurality of leads and the one or more die flags.
5. The method of claim 4 , further comprising exposing an end of each lead of the second plurality of leads through removing the first side of the outer frame.
6. The method of claim 4 , further comprising electroplating the end of each lead of the second plurality of leads through the second plurality of tie bars.
7. The method of claim 6 , further comprising electrically isolating the one or more die flags from the plurality of second leads by forming a trench through the second plurality of tie bars.
8. The method of claim 1 , wherein the one or more die flags comprise a first die flag and a second die flag.
9. A method of forming a semiconductor package comprising:
providing a lead frame encompassed by an outer frame, the lead frame comprising a plurality of leads, a plurality of die flags, and a plurality of tie bars directly coupled between the plurality of leads and the outer frame;
half-etching the plurality of tie bars;
at least partially encapsulating the lead frame in a mold compound;
exposing an end of each lead of the plurality of leads through removing a first side of the outer frame from the lead frame;
removing a second side of the outer frame from the lead frame;
electroplating an end of each lead of the plurality of leads through the plurality of tie bars;
singulating the lead frame from the outer frame through removal of a third side of the outer frame and an opposing fourth side of the outer frame;
exposing an end of each tie bar of the plurality of tie bars through the removal of the third side and the fourth side of the outer frame.
10. The method of forming the semiconductor package of claim 9 , wherein the plurality of tie bars comprise four tie bars.
11. The method of claim 9 , wherein the plurality of tie bars comprise two tie bars.
12. The method of claim 9 , further comprising half-etching a second plurality of tie bars directly coupled to and between a second plurality of leads and the plurality of die flags.
13. The method of claim 12 , further comprising exposing an end of each lead of the second plurality of leads through removing the first side of the outer frame.
14. The method of claim 13 , further comprising electroplating the end of each lead of the second plurality of leads through the second plurality of tie bars.
15. The method of claim 14 , further comprising electrically isolating the plurality of die flags from the plurality of second leads by forming a trench through the second plurality of tie bars.
16. A method of forming a semiconductor package comprising:
providing a lead frame comprising a plurality of leads and a plurality of die flags, wherein the lead frame is encompassed by an outer frame;
electrically coupling the plurality of leads to the plurality of die flags through a plurality of clips;
at least partially encapsulating the lead frame and the plurality of clips in a mold compound;
exposing an end of each lead of the plurality of leads through removing a first side of the outer frame from the lead frame;
electroplating the end of the each lead through the plurality of clips; and
removing the remaining outer frame from the lead frame.
17. The method of forming the semiconductor package of claim 16 , wherein the plurality of die flags include two die flags.
18. The method of forming the semiconductor package of claim 17 , wherein the plurality of clips include two gate clips and two source clips.
19. The method of forming the semiconductor package of claim 16 , wherein each end of each lead comprises a thickness of at least 8 micrometers of electroplated material coupled thereto.
20. The method of forming the semiconductor package of claim 16 , wherein removing the first side of the outer frame is done through a first punch process and removing the remaining outer frame is done through a second punch process.