Alternating etch and passivation process
Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl 2 and BCl 3 .
1. A method of processing a semiconductor substrate, the method comprising:
(a) providing a semiconductor substrate having an exposed silicon-containing material and an exposed tin oxide;
(b) passivating the exposed silicon-containing material towards a tin oxide etch chemistry;
(c) etching the exposed tin oxide using the tin oxide etch chemistry; and
(d) repeating operations (b) and (c) such that operations (b) and (c) are performed in an alternating fashion.
2. The method of claim 1 , wherein the exposed silicon-containing material is selected from the group consisting of amorphous silicon, silicon oxide, SiON, SiOC, SiONC, SiC, and SiN.
3. The method of claim 1 , wherein (c) comprises etching tin oxide using a chlorine-based etch chemistry that comprises exposing the semiconductor substrate to a plasma-activated chlorine-containing reactant selected from the group consisting of Cl 2 , BCl 3 , and combinations thereof.
4. The method of claim 1 , wherein (c) comprises etching the tin oxide using a hydrogen-based etch chemistry that results in a formation of a tin hydride.
5. The method of claim 1 , wherein (c) comprises etching the tin oxide using a hydrogen-based etch chemistry, by contacting the semiconductor substrate with a plasma-activated hydrogen-containing reactant selected from the group consisting of H 2 , HBr, NH 3 , H 2 O, a hydrocarbon, and combinations thereof.
6. The method of claim 1 , wherein (c) comprises etching tin oxide using a chlorine-based etch chemistry that comprises exposing the semiconductor substrate to a plasma-activated process gas comprising a chlorine-containing reactant selected from the group consisting of Cl 2 , BCl 3 , and combinations thereof, and a diluent gas selected from the group consisting from helium, neon, argon, and xenon and combinations thereof.
7. The method of claim 1 , wherein (b) comprises treating the substrate with an oxygen-containing reactant.
8. The method of claim 1 , wherein (b) comprises treating the substrate with a plasma-activated oxygen-containing reactant.
9. The method of claim 1 , wherein (b) comprises treating the substrate with a plasma formed in a process gas comprising a gas selected from the group consisting of O 2 , O 3 , SO 2 , and CO 2 .
10. The method of claim 1 , wherein (b) is performed before (c).
11. The method of claim 1 , wherein (c) is performed before (b).
12. The method of claim 1 , wherein operations (b) and (c) are performed between 2-50 times.
13. The method of claim 1 , wherein the silicon-containing material is selected from the group consisting of amorphous silicon, silicon oxide, SiON, SiOC, SiONC, SiC, and SiN, wherein the passivating in (b) comprises treating the substrate with a plasma-activated oxygen-containing reactant, and wherein (c) comprises etching the tin oxide using a chlorine-based etch chemistry that comprises exposing the semiconductor substrate to a plasma-activated chlorine-containing reactant selected from the group consisting of Cl 2 , BCl 3 , and combinations thereof.
14. The method of claim 1 , wherein (b) comprises treating the semiconductor substrate with a nitrogen-containing reactant.