IP Library › Granted Patent US 12,622,232
Granted Patent B2
US 12,622,232 · App. 18/002,627 · Granted May 5, 2026

Advanced self aligned multiple patterning using tin oxide

Inventors: Akhil Singhal (Beaverton, OR); Sivananda Krishnan Kanakasabapathy (Pleasanton, CA)
Assignee: Lam Research Corporation
H01L21/0337H01L21/02181H01L21/02186H01L21/0228H01L21/76897
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Quick Facts
Patent No.
US 12,622,232
App. No.
18/002,627
Granted
May 5, 2026
Kind
B2
Abstract

Disclosed are methods and apparatuses for performing spacer on spacer multiple patterning schemes using an exhumable first spacer material and a complementary second spacer material. Certain embodiments involve using a tin oxide spacer material for one of the spacer materials in spacer on spacer self aligned multiple patterning.

Claims (47)

1 . A method for processing substrate, the method comprising:

performing spacer-on-spacer patterning on a semiconductor substrate using at least one spacer comprising tin oxide,

wherein performing spacer-on-spacer patterning comprises:

forming a first spacer comprising a first conformal spacer material by selectively etching a patterned core material from a substrate having the first conformal spacer material over the patterned core material, the first conformal spacer material selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, and lead oxide over the patterned core material; and

forming a second spacer comprising a second conformal spacer material using the first spacer, the second conformal spacer material comprising tin.

2 . The method of claim 1 , wherein performing spacer-on-spacer patterning comprises:

depositing a first conformal spacer material over a patterned core material,

selectively etching the patterned core material to form a first spacer comprising the first conformal spacer material,

depositing a second conformal spacer material over the first spacer, selectively etching the first spacer to form a second spacer comprising the second conformal spacer material, and

etching a target layer using the second spacer as a mask,

wherein either the first conformal spacer material comprises tin oxide or the second conformal spacer material comprises tin oxide.

3 . The method of claim 2 , wherein the first conformal spacer material comprises tin oxide and the first spacer is selectively etched by exhuming using hydrogen gas.

4 . The method of claim 2 , wherein at least one of the first conformal spacer material and the second conformal spacer material comprises tin oxide and the other of the first conformal spacer material and the second conformal spacer material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide.

5 . The method of claim 2 , wherein the first conformal spacer material comprises tin oxide and the first spacer is selectively etched by exhuming using hydrogen gas.

6 . The method of claim 1 , wherein the tin oxide is deposited using a tin halide, organometallic tin-containing compound, chlorinated organometallic tin-containing compound, and combinations thereof.

7 . The method of claim 1 , wherein the tin oxide is deposited using a tin-containing precursor selected from the group consisting of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); and 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine.

8 . The method of claim 1 , wherein the tin oxide is deposited using a tin-containing precursor selected from the group consisting of to tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF 2 ); tin(IV) chloride (SnCl 4 ); tin(IV) bromide (SnBr 4 ); tin hydride (SnH 4 ); tin(II)(1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt 4 ); tetramethyl tin (SnMe 4 ); dibutyltin diacetate (Bu 2 Sn(OAc) 2 );

(dimethylamino)trimethyl tin(IV) (Me 3 Sn(NMe 2 )); tetrakis(diethylamido)tin(IV) (Sn(NEt 2 ) 4 ), trimethyl tin chloride; dimethyl tin dichloride; methyl tin trichloride;

bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate;

trimethyl(phenylethynyl) tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin; and

tricyclohexyltin hydride.

9 . The method of claim 1 , wherein the tin oxide is provided using at least one of chemical vapor deposition process, atomic layer deposition, or any combination thereof.

10 . The method of claim 1 , wherein tin oxide is provided using plasma-enhanced atomic layer deposition (PEALD).

11 . The method of claim 1 , wherein the tin oxide is deposited using an oxygen-containing reactant selected from the group consisting of oxygen gas, oxygen plasma, water, ozone, hydrogen peroxide, and nitrous oxide.

12 . A method for processing substrates, the method comprising:

providing a substrate having a patterned core material;

depositing a first material conformally over the patterned core material on sidewalls of the patterned core material, the first material selected from the group consisting of silicon oxide, silicon nitride, titanium oxide, and lead oxide;

selectively removing the patterned core material to form a first spacer;

depositing spacer material comprising a tin oxide conformally over the first spacer on sidewalls of the first spacer; and

selectively removing first spacers to form second spacers comprising the tin oxide.

13 . The method of claim 12 , wherein the tin oxide spacer material is deposited using a tin-containing precursor selected from the group consisting of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF 2 ); tin(IV) chloride (SnCl 4 ); tin(IV) bromide (SnBr 4 ); tin hydride (SnH 4 ); tin(II)(1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt 4 ); tetramethyl tin (SnMe 4 ); dibutyltin diacetate (Bu 2 Sn(OAc) 2 ); (dimethylamino)trimethyl tin(IV) (Me 3 Sn(NMe 2 ));

tetrakis(diethylamido)tin(IV) (Sn(NEt 2 ) 4 ), trimethyl tin chloride; dimethyl tin dichloride;

methyl tin trichloride; bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate; trimethyl(phenylethynyl) tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin;

and tricyclohexyltin hydride.

14 . The method of claim 12 , wherein the tin oxide spacer material is deposited using an oxygen-containing reactant selected from the group consisting of oxygen gas, oxygen plasma, water, ozone, hydrogen peroxide, and nitrous oxide.

15 . A method for processing substrates, the method comprising:

depositing an exhumable material conformally over a core material;

selectively removing horizontal regions of the exhumable material and removing the core material to form spacers comprising the exhumable material; and

depositing a complementary material over the spacers comprising the exhumable material, wherein the exhumable material is capable of being selectively etched relative to the complementary material,

wherein the exhumable material comprises tin oxide and the complementary material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide.

16 . The method of claim 15 , wherein at least one of the exhumable material and the complementary material comprises tin oxide and the other of the exhumable material and the complementary material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, hafnium oxide, and lead oxide.

17 . The method of claim 15 , further comprising removing the spacers comprising the exhumable material using hydrogen gas.

18 . The method of claim 15 , wherein the exhumable material is selected from the group consisting of titanium oxide, silicon oxide, silicon nitride, and lead oxide and the complementary material comprises tin oxide.

19 . The method of claim 15 , wherein the exhumable material comprises tin oxide deposited using a tin-containing precursor selected from the group consisting of tetrakis(dimethylamino) tin; tetrakis(ethylmethylamino) tin; N 2 ,N 3 -di-tert-butyl-butane-2,3-diamino-tin(II); 1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidine; stannous fluoride (SnF 2 ); tin(IV) chloride (SnCl 4 ); tin(IV) bromide (SnBr 4 ); tin hydride (SnH 4 ); tin(II)(1,3-bis(1,1-dimethylethyl)-4,5-dimethyl-(4R,5R)-1,3,2-diazastannolidin-2-ylidene); tetraethyl tin (SnEt 4 ); tetramethyl tin (SnMe 4 ); dibutyltin diacetate (Bu 2 Sn(OAc) 2 ); (dimethylamino)trimethyl tin(IV) (Me 3 Sn(NMe 2 ));

tetrakis(diethylamido)tin(IV) (Sn(NEt 2 ) 4 ), trimethyl tin chloride; dimethyl tin dichloride;

methyl tin trichloride; bis[bis(trimethylsilyl)amino]tin(II); hexaphenylditin(IV); tin(II) acetylacetonate; trimethyl(phenylethynyl) tin; dibutyldiphenyltin; tetraallyltin; tetravinyltin;

and tricyclohexyltin hydride.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 20, 2022
From: SINGHAL, AKHIL; KANAKASABAPATHY, SIVANANDA KRISHNAN
To: LAM RESEARCH CORPORATION
Reel/Frame 062165/0017 →
Continuity (2)
Provisional Application 62705952 · Jul 23, 2020
Related Publication 20230238238A1 · Jul 27, 2023
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