Semiconductor device and method for manufacturing the same
A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.
1. A semiconductor device comprising:
a first insulating film comprising a first region, a second region, and a third region between the first region and the second region;
a multilayer film comprising:
a first oxide semiconductor film over and in contact with the third region of the first insulating film and not in contact with the first region and the second region of the first insulating film, wherein the first oxide semiconductor film comprises indium, gallium, and zinc; and
a second oxide semiconductor film over and in contact with the first oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc;
a source electrode and a drain electrode each over the second oxide semiconductor film;
a second insulating film over the second oxide semiconductor film; and
a gate electrode over the second oxide semiconductor film with the second insulating film interposed therebetween,
wherein the third region of the first insulating film has a larger thickness than the first region and the second region of the first insulating film.
2. The semiconductor device according to claim 1 , comprising:
a first low-resistance region and a second low-resistance region over the multilayer film.
3. The semiconductor device according to claim 1 , comprising:
a first low-resistance region between the source electrode and the multilayer film; and
a second low-resistance region between the drain electrode and the multilayer film.
4. The semiconductor device according to claim 1 ,
wherein the source electrode is in contact with the first region of the first insulating film, and
wherein the drain electrode is in contact with the second region of the first insulating film.
5. The semiconductor device according to claim 1 , wherein an end portion of the multilayer film has a curved surface.
6. The semiconductor device according to claim 1 , wherein an end portion of each of the source electrode and the drain electrode has a step overlapping with the multilayer film.
7. The semiconductor device according to claim 1 , wherein the second insulating film is positioned over the source electrode and the drain electrode.
8. The semiconductor device according to claim 1 , wherein the gate electrode overlaps with the source electrode and the drain electrode.
9. A semiconductor device comprising:
a first insulating film comprising a first region, a second region, and a third region between the first region and the second region;
a multilayer film comprising:
a first oxide semiconductor film over and in contact with the third region of the first insulating film and not in contact with the first region and the second region of the first insulating film, wherein the first oxide semiconductor film comprises indium, gallium, and zinc;
a second oxide semiconductor film over and in contact with the first oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc; and
a third oxide semiconductor film over and in contact with the second oxide semiconductor film, wherein the second oxide semiconductor film comprises indium, gallium, and zinc;
a source electrode and a drain electrode each over the second oxide semiconductor film;
a second insulating film over the third oxide semiconductor film; and
a gate electrode over the third oxide semiconductor film with the second insulating film interposed therebetween,
wherein the third region of the first insulating film has a larger thickness than the first region and the second region of the first insulating film.
10. The semiconductor device according to claim 9 , comprising:
a first low-resistance region and a second low-resistance region over the multilayer film.
11. The semiconductor device according to claim 9 , comprising:
a first low-resistance region between the source electrode and the multilayer film; and
a second low-resistance region between the drain electrode and the multilayer film.
12. The semiconductor device according to claim 9 ,
wherein the source electrode is in contact with the first region of the first insulating film, and
wherein the drain electrode is in contact with the second region of the first insulating film.
13. The semiconductor device according to claim 9 , wherein an end portion of the multilayer film has a curved surface.
14. The semiconductor device according to claim 9 , wherein an end portion of each of the source electrode and the drain electrode has a step overlapping with the multilayer film.
15. The semiconductor device according to claim 9 , wherein the second insulating film is positioned over the source electrode and the drain electrode.
16. The semiconductor device according to claim 9 , wherein the gate electrode overlaps with the source electrode and the drain electrode.
17. The semiconductor device according to claim 9 , wherein the source electrode and the drain electrode are positioned over the third oxide semiconductor film.
18. The semiconductor device according to claim 9 , wherein the third oxide semiconductor film is in contact with a side surface of the source electrode and a side surface of the drain electrode.
19. The semiconductor device according to claim 9 , wherein the third oxide semiconductor film is positioned over the source electrode and the drain electrode.
20. The semiconductor device according to claim 9 , wherein the third oxide semiconductor film is in contact with a side surface of the second oxide semiconductor film.