Cyclic spacer etching process with improved profile control
Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.
1. A method of patterning a substrate, comprising:
positioning a substrate having one or more mandrel structures and a spacer material formed thereon in a processing chamber, wherein the spacer material is a layer formed over the mandrel structures;
exposing the spacer material to a treatment plasma generated from a gas mixture including at least NH 3 gas to modify one or more regions of the spacer material;
exposing the modified regions of the spacer material to an etchant plasma to remove a portion of the spacer material; and
repeating the exposing the spacer material to a treatment plasma and the exposing the modified regions of the spacer material to an etchant plasma until a portion of the mandrel structure is exposed.
2. The method of claim 1 , wherein the one or more mandrel structures comprise a silicon containing material.
3. The method of claim 1 , wherein the spacer material comprises a nitride containing material, an oxide containing material, a polysilicon material, a titanium nitride material, or combinations thereof.
4. The method of claim 1 , wherein a processing gas utilized to form the etchant plasma is selected from the group consisting of H 2 , N 2 , H 2 O 2 , NF 3 , NH 3 , Cl 2 , F 2 , and combinations and mixtures thereof.
5. The method of claim 1 , wherein exposing the spacer material to the treatment plasma further comprises:
biasing the substrate.
6. The method of claim 5 , wherein the biasing the substrate is performed at a power of between about 10 W and about 1500 W.
7. The method of claim 5 , wherein the exposing the spacer material to the treatment plasma is performed at a pressure of between about 5 mT and about 300 mT.
8. The method of claim 1 , wherein the etchant plasma exposure is unbiased and the etchant plasma is generated by a remote plasma source.
9. The method of claim 8 , wherein a power utilized to generate the etchant plasma from the remote plasma source for a 300 mm substrate is between about 20 W and about 2000 W.
10. The method of claim 8 , wherein the etchant plasma exposure is performed at a pressure of between about 500 mT and about 10T.
11. A method of patterning a substrate, comprising:
positioning a substrate having one or more mandrel structures and a spacer material formed thereon in a processing chamber,
exposing the spacer material to a biased treatment plasma generated from a gas mixture including at least NH 3 gas at a pressure of less than about 300 mT to modify one or more regions of the spacer material;
exposing the modified regions of the spacer material to an unbiased etchant plasma generated by a remote plasma source at a pressure of greater than about 500 mT to remove a portion of the spacer material; and
repeating the exposing the spacer material to the treatment plasma and the exposing the modified regions of the spacer material to an etchant plasma until a portion of the mandrel structure is exposed.
12. The method of claim 11 , wherein the exposing the exposing the spacer material to the biased treatment plasma and the exposing the modified region of the spacer material to an unbiased etchant plasma are performed in a single chamber.
13. The method of claim 11 , wherein the exposing the exposing the spacer material to a biased treatment plasma is performed in a first processing chamber and the exposing the modified region of the spacer material to an unbiased etchant plasma is performed in a second processing chamber.
14. The method of claim 13 , wherein the substrate is transferred from the first processing chamber to the second processing chamber without breaking vacuum.
15. A method of patterning a substrate, comprising:
positioning a substrate having one or more mandrel structures and a spacer material formed thereon in a processing chamber;
exposing the spacer material to a treatment plasma generated from a gas mixture including at least NH 3 gas to modify one or more regions of the spacer material;
exposing the modified regions of the spacer material to an etchant plasma to remove a portion of the spacer material;
repeating the exposing the spacer material to a treatment plasma and the exposing the modified regions of the spacer material to an etchant plasma until a portion of the mandrel structure is exposed;
etching the mandrel structure; and
repeating the exposing the spacer material to a treatment plasma and the exposing the modified regions of the spacer material to an etchant plasma until a desired spacer profile is formed.
16. The method of claim 15 , wherein exposing the spacer material to the treatment plasma further comprises:
biasing the substrate.
17. The method of claim 16 , wherein the etchant plasma exposure is unbiased and the etchant plasma is generated by a remote plasma source.