Structure and process for warpage reduction
The present disclosure is directed to a semiconductor carrier platform having a support panel with a top surface and a bottom surface, with the top surface providing a working surface for assembling IC packages using panel-level packaging technology. In an aspect, a backside molding layer may be positioned on the bottom surface of the support panel to prevent or correct any panel warpage. In another aspect, a removable film may be positioned between the bottom surface of the support panel and the backside molding layer to allow the support panel to be readily cleaned and reused.
1 . A semiconductor carrier platform comprising:
a support panel with a top surface and a bottom surface, wherein the top surface provides an active or working surface for integrated-circuit packages;
a backside molding layer, wherein the backside molding layer is positioned on the bottom surface of the support panel and has a coefficient of thermal expansion that is selected based on a coefficient of thermal expansion for the integrated-circuit packages to enable warpage control; and
a removable film positioned between the bottom surface of the support panel and the backside molding layer.
2 . The semiconductor carrier platform of claim 1 , wherein the backside molding layer further comprises an epoxy material.
3 . The semiconductor carrier platform of claim 1 , wherein the backside molding layer further comprises a molded material that is the same or similar to a mold material used in the integrated-circuit packages.
4 . The semiconductor carrier platform of claim 1 , wherein the support panel further comprises the backside molding layer being sized to be at least co-extensive with an active area of the support panel.
5 . A method comprising:
providing a support panel, wherein the support panel has a top surface and a bottom surface and the top surface provides an active area for assembly of integrated-circuit packages;
placing a removable film on the bottom surface of the support panel; and
depositing an epoxy material on the removable film to form a semiconductor carrier platform, wherein the epoxy material provides a backside molding layer for the semiconductor carrier platform that enables warpage control.
6 . The method of claim 5 , wherein the deposition of the epoxy material further comprises using a lamination, spray coating, slit coating, spin coating, or molding process.
7 . The method of claim 5 , further comprising providing the backside molding layer with a level working surface.
8 . The method of claim 7 , wherein the level working surface for the backside molding layer is provided by chemical-mechanical polishing.
9 . The method of claim 5 , wherein the backside molding layer has a thickness that is selected based on a thickness of the integrated-circuit packages.
10 . The method of claim 5 , wherein the backside molding layer enables warpage control by having a coefficient of thermal expansion that is selected based on a coefficient of thermal expansion for the integrated-circuit packages.
11 . The method of claim 5 , further comprising:
removing the removable film and the backside molding layer;
removing the integrated-circuit packages from the support panel; and
re-using the support panel,
wherein removing the removable film comprises using a mechanical debonding process, wherein the backside molding layer is simultaneously removed with the removable film.
12 . A method comprising:
providing a support panel, wherein the support panel has a top surface and a bottom surface;
providing a plurality of integrated-circuit packages on an active area of the top surface of the support panel;
depositing an epoxy material over the bottom surface, wherein the epoxy material provides a backside molding layer for the support panel; and
performing semiconductor processing operations on the plurality of integrated-circuit packages, wherein the support panel and the backside molding layer provide a semiconductor carrier platform for integrated-circuit packages during the semiconductor processing operations, wherein the backside molding layer has a coefficient of thermal expansion that is selected based on a coefficient of thermal expansion for the integrated-circuit packages to enable warpage control.
13 . The method of claim 12 , wherein the deposition of the epoxy material further comprises using a lamination, spray coating, slit coating, spin coating, or molding process.
14 . The method of claim 12 , further comprising:
placing a removable film on the bottom surface of the support panel, wherein the backside molding layer is deposited on the removable film.
15 . The method of claim 14 , further comprising:
removing the removable film and the backside molding layer;
removing the plurality of integrated-circuit packages from the support panel; and
re-using the support panel.
16 . The method of claim 15 , wherein the removable film comprises a low adhesion tape that is removed from the support panel using a peeling process, wherein the backside molding layer is simultaneously removed with the removable film.
17 . The method of claim 15 , wherein removing the removable film comprises using a mechanical debonding process, wherein the backside molding layer is simultaneously removed with the removable film.
18 . The method of claim 15 , wherein removing the removable film comprises using a thermal debonding process, wherein the backside molding layer is simultaneously removed with the removable film.
19 . The method of claim 15 , wherein removing the removable film comprises using a chemical debonding process, wherein the backside molding layer is simultaneously removed with the removable film.
20 . The method of claim 15 , wherein removing the removable film comprises using a laser debonding process, wherein the backside molding layer is simultaneously removed with the removable film.