Open Czochralski furnace for single crystal growth
View Patent ↗The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.
1. A temperature field device for crystal growth, comprising:
a first drum;
a second drum located inside the first drum;
a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum;
a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum, wherein the first cover plate includes a first through hole and a second through hole configured for gas passing; and
a second cover plate mounted inside the first drum and covering a top end of the second drum, wherein the second cover plate includes a third through hole corresponding to the first through hole and a fourth through hole corresponding to the second through hole, the third through hole and the first through hole having a same rotation central axis, and the fourth through hole and the second through hole having a same rotation central axis.
2. The temperature field device of claim 1 , wherein a height of the second drum is smaller than a height of the first drum.
3. The temperature field device of claim 1 , wherein a thickness of the first drum is 1-15 mm.
4. The temperature field device of claim 1 , wherein a height of the first drum is 600-1600 mm.
5. The temperature field device of claim 1 , wherein a thickness of the second drum is 8-30 mm.
6. The temperature field device of claim 1 , wherein a height of the second drum is 500-1500 mm.
7. The temperature field device of claim 1 , wherein the temperature field device further includes a filler filled in a space between the first drum and the second drum.
8. The temperature field device of claim 7 , wherein a particle size of the filler is 5-200 mesh.
9. The temperature field device of claim 1 , wherein the temperature field device further includes a filler filled in the second drum.
10. The temperature field device of claim 9 , wherein a filling height of the filler is adjusted to make that a vertical distance between an upper edge of a crucible located in the second drum and an upper edge of a heater located outside the temperature field device is within 0˜∓50 mm.
11. The temperature field device of claim 1 , wherein a level requirement of the bottom plate is less than 0.5 mm/m, wherein the level requirement of the bottom plate refers to a height difference between two ends of the bottom plate per unit length.
12. The temperature field device of claim 1 , wherein
the first through hole configured to allow a gas to enter into the temperature field device; and
the second through hole configured to allow the gas to exit from the temperature field device.
13. The temperature field device of claim 12 , wherein a diameter of the first through hole or a diameter of the second through hole is within 15-30 mm.
14. The temperature field device of claim 12 , wherein a distance between the first through hole and the second through hole is within 70-150 mm.
15. The temperature field device of claim 12 , wherein a rotation central axis of the first through hole or the second through hole is perpendicular to a horizontal plane or forms an angle of 3-20 degrees with a vertical line of the horizontal plane.
16. The temperature field device of claim 12 , wherein an observation unit is mounted above the first through hole or the second through hole, the observation unit including:
a chamber connected with the first through hole or the second through hole;
a through hole connected with the chamber, the through hole being configured to allow the gas to enter into or to exit from the temperature field device; and
an observation window mounted on a top of the chamber.
17. The temperature field device of claim 1 , wherein a concentricity among the first drum, the second drum, the bottom plate, and the first cover plate is less than 1 mm.
18. The temperature field device of claim 1 , wherein a perpendicularity among the first drum, the second drum, the bottom plate, and the first cover plate is less than 0.2°.