IP Library › Granted Patent US 11,885,037
Granted Patent B2
US 11,885,037 · App. 18/063,646 · Granted Jan 30, 2024

Open Czochralski furnace for single crystal growth

Inventors: Yu Wang (Meishan, CN); Weiming Guan (Meishan, CN); Zhenxing Liang (Meishan, CN)
Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
C30B15/14C30B15/30
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Quick Facts
Patent No.
US 11,885,037
App. No.
18/063,646
Granted
Jan 30, 2024
Kind
B2
Abstract

The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a first drum; a second drum located inside the first drum; a filler filled in a space between the first drum and the second drum; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum; and a first cover plate mounted on a top of the temperature filed device and covering a top end of the first drum.

Claims (29)

1. A temperature field device for crystal growth, comprising:

a first drum;

a second drum located inside the first drum;

a filler filled in a space between the first drum and the second drum;

a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the first drum;

a first cover plate mounted on a top of the temperature field device and covering a top end of the first drum;

an observation unit mounted on the first cover plate, wherein the observation unit includes a through hole opened on the observation unit, and the through hole is configured for gas passing; and

a gas channel mounted on the observation unit, wherein a size of the gas channel is matched with a size of the through hole.

2. The temperature field device of claim 1 , wherein the filler is further filled in the second drum and configured to support a crucible.

3. The temperature field device of claim 2 , wherein a filling height of the filler filled in the second drum is adjusted to make that a vertical distance between an upper edge of the crucible and an upper edge of a heater located outside the temperature field device is within 0˜∓50 mm.

4. The temperature field device of claim 2 , wherein a tightness of the filler filled in the second drum is adjusted to adjust a temperature gradient in the temperature field device.

5. The temperature field device of claim 1 , wherein a particle size of the filler is 5-200 mesh.

6. The temperature field device of claim 1 , wherein the filler includes at least one of a granule shaped material, a brick shaped material, or a felt shaped material.

7. The temperature field device of claim 1 , wherein a height of the second drum is smaller than a height of the first drum.

8. The temperature field device of claim 1 , wherein a thickness of the first drum is 1-15 mm.

9. The temperature field device of claim 1 , wherein a height of the first drum is 600-1600 mm.

10. The temperature field device of claim 1 , wherein a thickness of the second drum is 8-30 mm.

11. The temperature field device of claim 1 , wherein a height of the second drum is 500-1500 mm.

12. The temperature field device of claim 1 , wherein a level requirement of the bottom plate is less than 0.5 mm/m, wherein the level requirement of the bottom plate refers to a height difference between two ends of the bottom plate per unit length.

13. The temperature field device of claim 1 , wherein a thickness of the first cover plate is within 10-40 mm.

14. The temperature field device of claim 1 , wherein the first cover plate includes:

a second through hole configured to allow a gas to enter into the temperature field device; and

a third through hole configured to allow the gas to exit from the temperature field device.

15. The temperature field device of claim 14 , wherein a diameter of the second through hole or a diameter of the third through hole is within 15-30 mm.

16. The temperature field device of claim 14 , wherein a distance between the second through hole and the third through hole is within 70-150 mm.

17. The temperature field device of claim 14 , wherein a rotation central axis of the second through hole or the third through hole is perpendicular to a horizontal plane or forms an angle of 3-20 degrees with a vertical line of the horizontal plane.

18. The temperature field device of claim 1 , further comprising a second cover plate mounted inside the first drum and covering a top end of the second drum, wherein a thickness of the second cover plate is within 20-35 mm.

19. The temperature field device of claim 1 , wherein a concentricity among the first drum, the second drum, the bottom plate, and the first cover plate is less than 1 mm.

20. The temperature field device of claim 1 , wherein a perpendicularity among the first drum, the second drum, the bottom plate, and the first cover plate is less than 0.2°.

Assignments (2)
CHANGE OF NAME Recorded May 13, 2026
From: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
To: BOYA ADVANCED MATERIALS CO., LTD.
Reel/Frame 075565/0780 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 10, 2022
From: WANG, YU; GUAN, WEIMING; LIANG, ZHENXING
To: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
Reel/Frame 062047/0641 →
Continuity (5)
Continuation 17451844 · Oct 22, 2021
Continuation 17035741 · Sep 29, 2020
Continuation 16903326 · Jun 16, 2020
Continuation PCTCN2019101698 · Aug 21, 2019
Related Publication 20230113889A1 · Apr 13, 2023
Cited By (1)
US 12,735,804