Semiconductor device and method of manufacture
A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.
1. A method of manufacturing a semiconductor device, the method comprising:
lining a semiconductor fin with a first liner;
lining the semiconductor fin with a second liner different from the first liner;
lining the semiconductor fin with a third liner different from the second liner;
annealing the third liner to form silicon oxide;
lining the semiconductor fin with a fourth liner different from the third liner;
depositing a capping layer over the fourth liner;
annealing the capping layer to transform the capping layer to silicon oxide;
depositing a dielectric cap over the capping layer;
planarizing the dielectric cap to the semiconductor fin; and
exposing a sidewall of the semiconductor fin.
2. The method of claim 1 , wherein the annealing the third liner comprises:
performing a first wet annealing process;
performing a second wet annealing process with different parameters from the first wet annealing process; and
a dry annealing process.
3. The method of claim 2 , wherein the first wet annealing process is performed at least in part at a temperature of between about 300° C. and about 500° C. for a time of between about 0.5 hours and about 2 hours.
4. The method of claim 3 , wherein the second wet annealing process is performed at least in part at a temperature of between about 500° C. and about 650° C. for a time of between about 0.5 hours and about 4 hours.
5. The method of claim 4 , wherein the dry annealing process is performed at least in part at a temperature of between about 600° C. and about 750° C. for a time of between about 0.5 hours and about 2 hours.
6. The method of claim 1 , wherein the annealing the third liner decreases a number of nitrogen bonds in the third liner.
7. The method of claim 1 , wherein the annealing the third line increases a number of oxygen bonds in the third liner.
8. A method of manufacturing a semiconductor device, the method comprising:
forming a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
forming a first liner adjacent to both the first semiconductor fin and the second semiconductor fin;
forming a second liner over the first liner;
forming a third liner over the second liner, the third liner comprising nitrogen at a percentage of less than about 10%;
forming a fourth liner over the third liner;
forming a capping layer over the fourth liner, the capping layer comprising carbon at a percentage of less than about 10%; and
depositing a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.
9. The method of claim 8 , wherein the forming the third liner comprises:
depositing a first material of the third liner; and
removing nitrogen from the first material.
10. The method of claim 9 , wherein the removing the nitrogen is performed at least in part with an annealing process.
11. The method of claim 10 , wherein the annealing process comprises:
a first wet annealing process;
a second wet annealing process different from the first wet annealing process; and
a dry annealing process.
12. The method of claim 11 , wherein the first wet annealing process is performed at least in part at a temperature of between about 300° C. and about 500° C.
13. The method of claim 12 , wherein the second wet annealing process is performed at least in part at a temperature of between about 500° C. and about 650° C.
14. The method of claim 8 , wherein the forming the third liner comprises:
depositing a first material of the third liner; and
increasing a number of oxygen bonds in the first material.
15. A method of manufacturing a semiconductor device, the method comprising:
depositing a first liner to line a recess adjacent to a first semiconductor fin, the first liner comprising a first material;
wet annealing the first liner to form a second material different from the first material;
depositing a second liner over the second material, the second liner comprising a third material; and
annealing the second liner to form a fourth material different from the third material.
16. The method of claim 15 , wherein the first material is silicon oxynitride.
17. The method of claim 16 , wherein the second material is silicon oxide.
18. The method of claim 17 , wherein the third material is silicon oxycarbonitride.
19. The method of claim 18 , wherein the fourth material is silicon oxide.
20. The method of claim 15 , wherein the wet annealing the first liner is performed at least in part at a temperature of between about 300° C. and about 500° C.