3D RAM SL/BL contact modulation
A 3D memory array includes a row of stacks, each stack having alternating gate strips and dielectric strips. Dielectric plugs are disposed between the stacks and define cell areas. A data storage film and a channel film are disposed adjacent the stacks on the sides of the cell areas. The middles of the cell areas are filled with an intracell dielectric. Source lines and drain lines form vias through the intracell dielectric. The source lines and the drain lines are each provided with a bulge toward the interior of the cell area. The bulges increase the areas of the source line and the drain line without reducing the channel lengths. In some of these teachings, the areas of the source lines and the drain lines are increased by restricting the data storage film or the channel layer to the sides of the cell areas adjacent the stacks.
1. A memory device comprising:
a first stack and a second stack, each of the first stack and the second stack comprising horizontal gate strips interleaved with dielectric strips;
a source line and a drain line extending vertically between the first stack and the second stack, wherein the source line has a curved sidewall; and
a first memory cell comprising a first semiconductor channel extending from the source line to the drain line and a first data storage structure between the first semiconductor channel and one of the horizontal gate strips in the first stack.
2. The memory device of claim 1 , wherein the source line has a second sidewall that is planar.
3. The memory device of claim 1 , further comprising a second memory cell comprises a second semiconductor channel that extends from the source line to the drain line and a second data storage structure that is between the second semiconductor channel and one of the horizontal gate strips in the second stack.
4. The memory device of claim 3 , further comprising an intracell dielectric surrounded by the first semiconductor channel, the second semiconductor channel, the source line, and the drain line.
5. The memory device of claim 4 , wherein the first semiconductor channel and the second semiconductor channel are curved.
6. The memory device of claim 1 , wherein the source line has a cross-section corresponding to an intersection of two elliptical shapes.
7. The memory device of claim 1 , wherein:
the first data storage structure has a first upper edge, a first lower edge, and a thickness;
the one of the horizontal gate strips in the first stack has a second upper edge and a second lower edge;
a distance from the first upper edge to the second upper edge is less than or equal to the thickness; and
a distance from the first lower edge to the second lower edge is less than or equal to the thickness.
8. The memory device of claim 1 , wherein:
the first data storage structure has a first upper edge and a first lower edge;
the first semiconductor channel is provided by a channel layer having a second upper edge, a second lower edge, and a thickness
a distance from the first upper edge to the second upper edge is less than or equal to the thickness; and
a distance from the first lower edge to the second lower edge is less than or equal to the thickness.
9. The memory device of claim 1 , wherein the first semiconductor channel is provided by a channel layer having an upper edge and a lower edge horizontally aligned respectively with an upper edge and a lower edge of the one of the horizontal gate strips in the first stack.
10. The memory device of claim 1 , wherein:
the horizontal gate strips in the first stack each comprises a first sidewall;
the dielectric strips in the first stack each comprises a second sidewall;
the first sidewalls are indented inward from the second sidewalls to form recesses in the first stack; and
the first data storage structure comprises a data storage film disposed in one of the recesses.
11. A memory device comprising:
a first stack and a second stack, each of the first stack and the second stack comprising horizontal gate strips interleaved with dielectric strips;
a source line and a drain line extending vertically between the first stack and the second stack; and
a memory cell comprising a channel provided by a vertical semiconductor film that wraps around the source line and the drain line and a data storage structure between the channel and one of the horizontal gate strips;
wherein the vertical semiconductor film has a curved sidewall.
12. The memory device of claim 11 , further comprising a vertical data storage film that wraps around the vertical semiconductor film.
13. The memory device of claim 11 , wherein the source line has a cross-section corresponding to an intersection of a circular and an elliptical shape.
14. A method of forming a memory device, the method comprising:
forming a stack with alternating gate strips and dielectric strips;
forming a trench in the stack
filling the trench;
forming a mask having oval openings;
etching first holes through a first dielectric in the trench, wherein the first holes are etched through the oval openings; and
filling the first holes with conductive material to form source lines and drain lines.
15. The method of claim 14 , wherein:
filling the trench comprises filing the trench with the first dielectric, forming holes in the first dielectric, and filling the holes with a second dielectric; and
etching the first holes through the first dielectric in the trench comprises an etch process that is selective for removing the first dielectric over removing the second dielectric.
16. The method of claim 14 , wherein:
filling the trench comprises filing the trench with a second dielectric, forming holes in the second dielectric, and filling the holes with the first dielectric; and
etching the first holes through the first dielectric in the trench comprises an etch process that is selective for removing the first dielectric over removing the second dielectric.
17. The method of claim 14 , wherein filling the trench comprises depositing a semiconductor film in the trench.
18. The method of claim 17 , wherein filling the semiconductor film is exposed through the oval openings.
19. The method of claim 18 , wherein etching the first holes through the first dielectric in the trench comprises an etch process that is selective for removing the first dielectric over removing the semiconductor film.
20. The method of claim 14 , wherein:
filling the trench comprises depositing a data storage film in the trench;
the data storage film is exposed through the oval openings; and
etching the first holes through the first dielectric in the trench comprises an etch process that is selective for removing the first dielectric over removing the data storage film.